{"id":5417,"date":"2026-06-10T01:53:02","date_gmt":"2026-06-10T01:53:02","guid":{"rendered":"https:\/\/materialparts.com\/irfp3306pbf\/"},"modified":"2026-06-10T01:53:02","modified_gmt":"2026-06-10T01:53:02","slug":"irfp3306pbf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/irfp3306pbf\/","title":{"rendered":"IRFP3306PBF"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The IRFP3306PBF from Infineon Technologies is a 60V N-channel StrongIRFET power MOSFET in a TO-247AC through-hole package. With 3.3mOhm typical on-resistance, 120A continuous drain current (package limited), and 220W power dissipation, it is optimized for low-frequency high-current applications such as DC motor drives and battery management systems.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n60 V<\/td>\n<\/tr>\n
ID (Package Limited)<\/td>\n120 A @ TC=25C<\/td>\n<\/tr>\n
ID (Silicon Limited)<\/td>\n160 A<\/td>\n<\/tr>\n
RDS(on) Typical<\/td>\n3.3 mOhm @ VGS=10V<\/td>\n<\/tr>\n
RDS(on) Maximum<\/td>\n4.2 mOhm @ VGS=10V<\/td>\n<\/tr>\n
Gate Charge (QG)<\/td>\n85 nC typical @ 10V<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n4520 pF @ 50V<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n220 W @ TC=25C<\/td>\n<\/tr>\n
VGS(th)<\/td>\n2.0 – 4.0 V<\/td>\n<\/tr>\n
RthJC<\/td>\n0.67 C\/W<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55 to +175 C (TJ)<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nTO-247AC<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • StrongIRFET family optimized for low RDS(on) and high current<\/li>\n
  • 60V drain-source voltage rating<\/li>\n
  • 3.3mOhm ultra-low on-resistance at VGS=10V<\/li>\n
  • 120A package-limited continuous drain current<\/li>\n
  • 85nC low gate charge for efficient switching<\/li>\n
  • Enhanced body diode dV\/dt and dI\/dt capability<\/li>\n
  • 100% avalanche tested and characterized<\/li>\n
  • Lead-free (PbF) RoHS compliant<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • DC motor drives and battery management systems<\/li>\n
    • Synchronous rectification in SMPS<\/li>\n
    • DC-DC converters and inverters<\/li>\n
    • Uninterruptible power supplies (UPS)<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRFP3306PBF from Infineon Technologies is a 60V N-channel StrongIRFET power MOSFET in a TO-247AC through-hole package. With 3.3mOhm typical on-resistance, 120A continuous drain current (package limited), and 220W power dissipation, it is optimized for low-frequency high-current applications such as DC motor drives and battery management systems. Key Specifications VDS 60 V ID […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-5417","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"60V N-ch StrongIRFET MOSFET, 3.3mOhm Ron, 120A, 220W, TO-247AC","date_code":"","package_case":"TO-247AC (15.87 x 5.31 x 20.7 mm)","in_stock":3940,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irfp3306pbf.pdf","price":"$1.50 @ 1ku","product_introduction":"The IRFP3306PBF from Infineon Technologies is a 60V N-channel StrongIRFET power MOSFET in a TO-247AC through-hole package. The PBF suffix denotes lead-free RoHS-compliant packaging. Based on Infineon's HEXFET technology, it features an ultra-low typical RDS(on) of 3.3mOhm at VGS=10V, making it ideal for high-current, low-voltage switching applications where conduction losses must be minimized. The silicon-limited continuous drain current rating is 160A, with a practical package-limited rating of 120A at TC=25C. The 220W power dissipation capability and 0.67C\/W junction-to-case thermal resistance enable reliable operation in demanding thermal environments. The enhanced body diode with improved dV\/dt and dI\/dt ruggedness makes it suitable for synchronous rectification and half-bridge topologies.","working_principle":"The IRFP3306PBF operates as a voltage-controlled N-channel enhancement-mode MOSFET. (1) Enhancement-Mode Operation: With no gate-source voltage applied, the device is in the off-state (no drain current flows). When VGS exceeds the threshold voltage (2.0-4.0V), an inversion layer forms in the P-body region, creating a conductive channel between drain and source. At VGS=10V, the channel is fully enhanced, yielding the minimum RDS(on) of 3.3mOhm typical. (2) Vertical Structure: The HEXFET vertical DMOS structure features a dense array of parallel-connected MOSFET cells on the die, providing the low on-resistance and high current density. The TO-247AC package with its large copper tab provides excellent thermal conductivity from junction to heatsink. (3) Body Diode: An intrinsic PN junction body diode exists between source and drain. In synchronous rectification applications, this diode conducts during the dead-time before the MOSFET channel turns on. The enhanced body diode dV\/dt capability ensures reliable commutation without parasitic bipolar turn-on. (4) Avalanche Operation: The device is 100% avalanche tested, meaning it can safely absorb energy from inductive transients that exceed the breakdown voltage, up to the rated single-pulse avalanche energy.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Description<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>Gate drive input (VGS max +\/-20V)<\/td><\/tr>
      2<\/td>Drain<\/td>Power<\/td>Drain terminal (connected to tab)<\/td><\/tr>
      3<\/td>Source<\/td>Power<\/td>Source terminal<\/td><\/tr>
      Tab<\/td>Drain<\/td>Power<\/td>Drain (connected to pin 2, heatsink mount)<\/td><\/tr><\/table>","application_scenarios":"
      • 48V battery management system with 3.3mOhm RDS(on) minimizing conduction losses at 100A load current<\/li>
      • Synchronous rectification in high-current DC-DC converter with enhanced body diode dV\/dt ruggedness<\/li>
      • DC motor H-bridge drive with 120A continuous current and 620A pulsed current capability<\/li>
      • UPS inverter stage with 220W power dissipation and 0.67C\/W thermal resistance for heatsink design<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>VDS<\/th>Ron<\/th>Notes<\/th><\/tr>
        IRFP3206PBF<\/td>Infineon<\/td>55V<\/td>2.6mOhm<\/td>Lower voltage, lower Ron<\/td><\/tr>
        IRFP3703PBF<\/td>Infineon<\/td>100V<\/td>6mOhm<\/td>Higher voltage rating<\/td><\/tr>
        IRFP4468PBF<\/td>Infineon<\/td>100V<\/td>2.6mOhm<\/td>Lower Ron at higher voltage<\/td><\/tr>
        IPP034N20N5G<\/td>Infineon<\/td>200V<\/td>3.4mOhm<\/td>Higher voltage, PG-TO247<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/5417","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=5417"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/5417\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=5417"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=5417"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=5417"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=5417"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}