The TPS1101DR from Texas Instruments is a 12V N-channel power MOSFET switch with 78mOhm RDS(on), 1.8A current limit, and integrated charge pump for low-voltage logic control in an SOIC-8 package.<\/p>\n
| \u529f\u80fd<\/td>\n | N-Channel Power Distribution Switch<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||
| Input Voltage (VIN)<\/td>\n | 2.7V to 12V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||
| RDS(on)<\/td>\n | 78 mOhm (max @ 5V EN)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||
| Continuous Current<\/td>\n | 1.8 A (max)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||
| Current Limit<\/td>\n | 1.9A to 3.5A (typ 2.6A)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||
| Enable Input<\/td>\n | Active high, CMOS compatible (1.8V logic)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||
| Fault Report (OC)<\/td>\n | Open-drain output, active low<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||
| Rise Time<\/td>\n | 3.6 ms (typ, soft-start)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||
| Standby Current<\/td>\n | 0.05 uA (typ, switch off)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||
| \u5305\u88c5<\/td>\n | SOIC-8 (3.9mm width)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||
| \u5de5\u4f5c\u6e29\u5ea6<\/td>\n | -40 to +85 C<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The TPS1101DR from Texas Instruments is a 12V N-channel power MOSFET switch with 78mOhm RDS(on), 1.8A current limit, and integrated charge pump for low-voltage logic control in an SOIC-8 package. Key Specifications Function N-Channel Power Distribution Switch Input Voltage (VIN) 2.7V to 12V RDS(on) 78 mOhm (max @ 5V EN) Continuous Current 1.8 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[31,13],"tags":[],"chip_brand":[138],"class_list":["post-3788","post","type-post","status-publish","format-standard","hentry","category-dc-dc-converters","category-integrated-circuits-ics","chip_brand-ti"],"acf":{"brief_explanation":"12V N-ch MOSFET switch, 78mOhm, 1.8A, current limit, fault flag, SOIC-8","date_code":"","package_case":"SOIC-8 (4.9 x 3.9 x 1.75 mm, D package)","in_stock":4916,"datasheet":"https:\/\/www.ti.com\/lit\/ds\/symlink\/tps1101.pdf","price":"$0.85 @ 1ku","product_introduction":"The TPS1101DR from Texas Instruments is a 12V N-channel power distribution switch with integrated charge pump, current limiting, and fault reporting in an SOIC-8 package. The device integrates a low-RDS(on) N-channel MOSFET (78mOhm max) with all the necessary control and protection circuitry for high-side power switching applications. The internal charge pump generates the gate drive voltage above VIN, allowing the N-channel MOSFET to be fully enhanced with only 1.8V logic-level enable input, eliminating the need for an external gate drive circuit. The current limit feature (1.9A to 3.5A, typically 2.6A) protects the system from overcurrent and short-circuit conditions by limiting the output current and activating the open-drain fault flag (OC pin). The thermal shutdown circuit disables the switch when the junction temperature exceeds approximately 140C, protecting against sustained overloads. The soft-start feature controls the output voltage rise time to approximately 3.6ms, limiting inrush current into capacitive loads (such as USB bus-powered devices with bypass capacitors). The 0.05uA standby current (switch off) minimizes battery drain in always-connected applications. Reverse current blocking prevents current from flowing from the output back to the input when the switch is off. The TPS1101DR is suitable for USB power distribution, hot-swap power control, battery-powered load switching, and any application requiring a protected, logic-controlled power switch.","working_principle":"The TPS1101DR operates as a high-side N-channel power MOSFET switch with integrated control and protection. Key subsystems include: (1) N-Channel MOSFET - the main power switch is an N-channel MOSFET between VIN and VOUT; the 78mOhm RDS(on) minimizes voltage drop at full load (Vdrop = I x RDS(on) = 1.8A x 78mOhm = 140mV); (2) Charge Pump - an internal charge pump generates a gate voltage approximately 5V above VIN; this high gate voltage fully enhances the N-channel MOSFET (which requires VGS > VIN for high-side operation); the charge pump allows the enable input to be driven by 1.8V logic while the switch handles up to 12V; (3) Current Limit - a current-sense circuit monitors the MOSFET current; when the current exceeds the limit (1.9-3.5A), the gate drive is reduced to limit the current; the OC (overcurrent) open-drain flag is pulled low to indicate a fault; the current limit and thermal shutdown work together: if the limited current causes excessive power dissipation (V x I = (VIN-VOUT) x I_LIMIT), the junction temperature rises and thermal shutdown activates; (4) Soft-Start - when the enable pin goes high, the output voltage ramps up over approximately 3.6ms; this limits the inrush current into capacitive loads (I = C x dV\/dt); without soft-start, the initial current would be limited only by the current limit, potentially stressing the device and the input supply; (5) Reverse Blocking - when the switch is off, the body diode of the N-channel MOSFET would normally conduct if VOUT > VIN; an internal reverse-blocking circuit prevents this current flow.","pin_description":"
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