The IRFB260NPBF from Infineon is a 200V N-channel power MOSFET with 50A drain current and 18mOhm RDS(on) in a TO-220 package, designed for high-efficiency switching applications.<\/p>\n
| \u7c7b\u578b<\/td>\n | N-Channel Enhancement MOSFET<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||
| VDS<\/td>\n | 200V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||
| VGS<\/td>\n | +\/-30V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||
| ID (Continuous)<\/td>\n | 50A (TC=25C)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||
| RDS(on) @ 10V<\/td>\n | 18 mOhm (max)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||
| VGS(th)<\/td>\n | 2-4V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||
| Qg (Total Gate Charge)<\/td>\n | 120 nC (typ)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||
| \u897f\u65af<\/td>\n | 3900 pF (typ)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||
| \u529f\u7387\u8017\u6563<\/td>\n | 250W (TC=25C)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||
| \u5305\u88c5<\/td>\n | TO-220AB (through-hole)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||
| \u5de5\u4f5c\u6e29\u5ea6<\/td>\n | -55 to +175 C (TJ)<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The IRFB260NPBF from Infineon is a 200V N-channel power MOSFET with 50A drain current and 18mOhm RDS(on) in a TO-220 package, designed for high-efficiency switching applications. Key Specifications Type N-Channel Enhancement MOSFET VDS 200V VGS +\/-30V ID (Continuous) 50A (TC=25C) RDS(on) @ 10V 18 mOhm (max) VGS(th) 2-4V Qg (Total Gate Charge) 120 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-3770","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"200V N-ch MOSFET, 50A, 18mOhm, TO-220, high-efficiency switching","date_code":"","package_case":"TO-220AB (15.6 x 10.4 x 4.6 mm, through-hole, 3 leads + tab)","in_stock":3339,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irfb260npbf.pdf","price":"$2.80 @ 1ku","product_introduction":"The IRFB260NPBF from Infineon (formerly International Rectifier) is a 200V N-channel power MOSFET with ultra-low on-resistance of 18mOhm maximum at VGS=10V, making it one of the lowest RDS(on) devices available in the 200V TO-220 class. The 50A continuous drain current rating and 250W power dissipation capability (with proper heatsinking) make this device suitable for demanding power switching applications in motor drives, power supplies, and converters. The 200V rating provides adequate voltage margin for 48V battery systems, telecom rectifiers (48V nominal), and UPS inverter stages. At 18mOhm RDS(on), conduction losses are dramatically lower than earlier-generation 200V MOSFETs (which typically had 40-80mOhm RDS(on)), enabling higher efficiency or eliminating the need for parallel MOSFET configurations. The total gate charge of 120nC is relatively low for a device of this current rating, allowing reasonable switching speeds with standard gate drivers. The TO-220 through-hole package provides excellent thermal performance with a junction-to-case thermal resistance that supports the full 250W rating when mounted on an appropriate heatsink. The IRFB260NPBF is commonly used in half-bridge and full-bridge motor drive stages, synchronous buck converters for 48V-to-point-of-load, and as the primary switch in forward or flyback converters.","working_principle":"The IRFB260NPBF operates as a voltage-controlled N-channel enhancement-mode power MOSFET. Key operating principles include: (1) Enhancement-Mode Operation - the device is OFF when VGS=0V; applying VGS above the threshold (2-4V) creates a conductive channel; at VGS=10V, the channel is fully enhanced with RDS(on)=18mOhm max; (2) Vertical DMOS Structure - current flows vertically from drain (substrate) through the epitaxial drift region and channel to the source; the 200V blocking capability is achieved through a carefully optimized epitaxial layer thickness and doping that balances RDS(on) against breakdown voltage; (3) Low RDS(on) Design - the ultra-low 18mOhm is achieved through advanced cell density optimization and stripe-cell geometry that maximizes channel width per unit die area; the tradeoff is higher input capacitance (Ciss=3900pF) and gate charge (Qg=120nC) compared to lower-current devices; (4) Switching Performance - the Qg=120nC determines the gate drive energy; with a 2A gate driver, the MOSFET can switch in approximately 60ns; for high-frequency applications (>200kHz), a stronger gate driver may be needed to minimize switching losses; (5) Body Diode - the intrinsic body diode (source-to-drain PN junction) has a forward voltage of approximately 1.2V and reverse recovery time of several hundred nanoseconds; in motor drive applications, an external Schottky diode in parallel may be needed if fast body diode recovery is required.","pin_description":"
|