{"id":3532,"date":"2026-06-06T10:01:27","date_gmt":"2026-06-06T10:01:27","guid":{"rendered":"https:\/\/materialparts.com\/ntd5865nlt4g\/"},"modified":"2026-06-06T10:01:27","modified_gmt":"2026-06-06T10:01:27","slug":"ntd5865nlt4g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/ntd5865nlt4g\/","title":{"rendered":"NTD5865NLT4G"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The NTD5865NLT4G from onsemi is an N-channel power MOSFET rated at 60V\/46A with ultra-low RDS(on) of 16 mOhm at VGS=10V. Built on advanced trench technology, it features low gate charge (29 nC), 100% avalanche tested, and is housed in a DPAK (TO-252) surface-mount package for high-efficiency power switching applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n60V<\/td>\n<\/tr>\n
\u8eab\u4efd\u8bc1<\/td>\n46A (TC=25C)<\/td>\n<\/tr>\n
RDS(on) @ 10V<\/td>\n16 mOhm (max)<\/td>\n<\/tr>\n
RDS(on) @ 4.5V<\/td>\n19 mOhm (typ)<\/td>\n<\/tr>\n
VGS(th)<\/td>\n2.0V (typ)<\/td>\n<\/tr>\n
Qg (Total Gate Charge)<\/td>\n29 nC @ 10V<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n71W (TC=25C)<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nDPAK \/ TO-252-3<\/td>\n<\/tr>\n
Operating Temp<\/td>\n-55 to 175 C (Tj)<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Ultra-low RDS(on) of 16 mOhm for minimal conduction losses<\/li>\n
  • 100% avalanche tested for rugged switching applications<\/li>\n
  • Low gate charge of 29 nC for efficient high-frequency switching<\/li>\n
  • Logic-level gate threshold compatible with 3.3V\/5V MCUs<\/li>\n
  • +\/-20V gate-source voltage rating<\/li>\n
  • Low thermal resistance: 2.1 C\/W junction-to-case<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • DC-DC converters and voltage regulators<\/li>\n
    • Motor drive and H-bridge circuits<\/li>\n
    • Power management and load switches<\/li>\n
    • Battery management systems<\/li>\n
    • Industrial power supplies<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The NTD5865NLT4G from onsemi is an N-channel power MOSFET rated at 60V\/46A with ultra-low RDS(on) of 16 mOhm at VGS=10V. Built on advanced trench technology, it features low gate charge (29 nC), 100% avalanche tested, and is housed in a DPAK (TO-252) surface-mount package for high-efficiency power switching applications. Key Specifications VDS 60V […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-3532","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"N-ch MOSFET, 60V, 46A, 16mOhm RDS(on), 29nC Qg, DPAK, -55 to 175C","date_code":"","package_case":"DPAK \/ TO-252-3 (6.5 x 5.5 x 2.3 mm)","in_stock":14066,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/NTD5865NL-D.PDF","price":"$0.95 @ 1ku","product_introduction":"The NTD5865NLT4G from onsemi is a high-performance N-channel power MOSFET rated at 60V drain-source voltage and 46A continuous drain current. Utilizing advanced trench technology, it achieves an ultra-low RDS(on) of 16 mOhm at VGS=10V, minimizing conduction losses in high-current switching applications. The device features low gate charge of 29 nC for efficient high-frequency switching, logic-level gate threshold for direct MCU drive, and 100% avalanche testing for rugged reliability. Packaged in DPAK (TO-252), it is ideal for DC-DC converters, motor drives, and power management circuits.","working_principle":"The NTD5865NLT4G is an enhancement-mode N-channel MOSFET where current flows from drain to source when a positive gate-source voltage exceeds the threshold (approximately 2.0V). The gate voltage creates an inversion layer in the P-body region, connecting the N+ source to the N-drift region. The trench gate structure increases channel density, reducing RDS(on) while maintaining compact die area. During switching, the gate charge (29 nC) must be supplied or removed to charge or discharge the gate capacitance. The body diode provides a natural freewheeling path in inductive switching.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>G<\/td>Input<\/td>Gate terminal (control input)<\/td><\/tr>
      2<\/td>D<\/td>Power<\/td>Drain terminal (tab\/heatsink)<\/td><\/tr>
      3<\/td>S<\/td>Power<\/td>Source terminal<\/td><\/tr><\/table>","application_scenarios":"
      • DC-DC converters: Low-side switch in synchronous buck regulators<\/li>
      • Motor drives: H-bridge and half-bridge for BLDC motor control<\/li>
      • Load switches: High-current power path switching<\/li>
      • Battery management: Charge\/discharge path control in BMS<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>IRFR3806TRPBF<\/td>DPAK<\/td>60V, 50A, 13mOhm<\/td><\/tr>
        Vishay<\/td>SI7860DP-T1-GE3<\/td>PowerPAK SO-8<\/td>60V, 50A, 12mOhm<\/td><\/tr>
        TI<\/td>CSD18534Q5A<\/td>SON-5x6<\/td>60V, 100A, 6.8mOhm<\/td><\/tr>
        AOS<\/td>AON6262E<\/td>DFN-5x6<\/td>60V, 80A, 8.5mOhm<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/3532","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=3532"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/3532\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=3532"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=3532"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=3532"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=3532"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}