{"id":3331,"date":"2026-06-01T01:58:20","date_gmt":"2026-06-01T01:58:20","guid":{"rendered":"https:\/\/materialparts.com\/csd18534q5a\/"},"modified":"2026-06-01T01:58:20","modified_gmt":"2026-06-01T01:58:20","slug":"csd18534q5a","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/csd18534q5a\/","title":{"rendered":"CSD18534Q5A"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The CSD18534Q5A from Texas Instruments is a 60V N-channel NexFET power MOSFET in a SON 5mm x 6mm package. With 7.8mOhm RDS(on) at VGS=10V and 17nC gate charge, it is optimized for high-efficiency DC-DC converters, secondary-side synchronous rectification, and motor drive applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n60V<\/td>\n<\/tr>\n
RDS(on) @ VGS=4.5V<\/td>\n9.9mOhm typ, 12.4mOhm max<\/td>\n<\/tr>\n
RDS(on) @ VGS=10V<\/td>\n7.8mOhm typ, 9.8mOhm max<\/td>\n<\/tr>\n
ID (package limit)<\/td>\n50A<\/td>\n<\/tr>\n
ID (silicon, TC=25 C)<\/td>\n69A<\/td>\n<\/tr>\n
Gate Charge (Qg) @ 10V<\/td>\n17nC typ<\/td>\n<\/tr>\n
Qgd<\/td>\n3.5nC typical<\/td>\n<\/tr>\n
VGS(th)<\/td>\n1.5-2.3V (1.9V typical)<\/td>\n<\/tr>\n
Avalanche Energy<\/td>\n80mJ<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55 to 150 C<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nSON 5x6mm (VSONP-8)<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Ultra-low Qg (17nC) and Qgd (3.5nC)<\/li>\n
  • Very low RDS(on): 7.8mOhm at 10V<\/li>\n
  • Low thermal resistance: RthJC = 2.0 C\/W<\/li>\n
  • Avalanche rated: 80mJ<\/li>\n
  • Logic-level gate threshold<\/li>\n
  • Pb-free, RoHS, halogen-free<\/li>\n
  • MSL-1 unlimited<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • DC-DC converters (buck, boost, buck-boost)<\/li>\n
    • Secondary-side synchronous rectifiers<\/li>\n
    • Isolated converter primary-side switch<\/li>\n
    • Motor drive and load switches<\/li>\n
    • Battery management systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The CSD18534Q5A from Texas Instruments is a 60V N-channel NexFET power MOSFET in a SON 5mm x 6mm package. With 7.8mOhm RDS(on) at VGS=10V and 17nC gate charge, it is optimized for high-efficiency DC-DC converters, secondary-side synchronous rectification, and motor drive applications. Key Specifications VDS 60V RDS(on) @ VGS=4.5V 9.9mOhm typ, 12.4mOhm max […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[138],"class_list":["post-3331","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-ti"],"acf":{"brief_explanation":"60V N-ch NexFET MOSFET, 7.8mOhm, 17nC Qg, 50A, SON 5x6mm","date_code":"","package_case":"VSONP-8 \/ SON 5mm x 6mm (5.75 x 4.90 x 1.05 mm, exposed pad)","in_stock":6215,"datasheet":"https:\/\/www.ti.com\/lit\/ds\/symlink\/csd18534q5a.pdf","price":"$0.27 @ 1ku","product_introduction":"The CSD18534Q5A from TI is a 60V N-channel NexFET power MOSFET in a SON 5x6mm package with exposed thermal pad. Optimized for high-efficiency power conversion with 7.8mOhm RDS(on) at 10V and 17nC gate charge. The low RthJC (2.0 C\/W) enables 50A package current rating. 80mJ avalanche capability and logic-level gate threshold.","working_principle":"Uses TI NexFET trench technology for very low specific on-resistance and gate charge simultaneously. The SON 5x6 package with large exposed drain pad provides 2.0 C\/W junction-to-case thermal resistance. Low Qgd\/Qgs ratio (3.5\/3.2 = 1.09) provides good Miller plateau immunity. The trench structure minimizes JFET region resistance for low RDS(on) per area.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Source<\/td>Source<\/td>Source terminal<\/td><\/tr>
      2<\/td>Gate<\/td>Input<\/td>Gate control<\/td><\/tr>
      3<\/td>Source<\/td>Source<\/td>Source terminal<\/td><\/tr>
      4-8<\/td>Drain<\/td>Drain<\/td>Drain terminals (exposed pad)<\/td><\/tr><\/table>","application_scenarios":"
      • Synchronous buck converter low-side FET in server POL<\/li>
      • Secondary-side synchronous rectifier in isolated converters<\/li>
      • Motor drive half-bridge with 60V bus<\/li>
      • Battery BMS discharge switch<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        TI<\/td>CSD18533Q5A<\/td>SON 5x6<\/td>60V, 3.5mOhm, higher current<\/td><\/tr>
        Infineon<\/td>IRLR8726TRPBF<\/td>D2PAK-7<\/td>60V, 9.7mOhm<\/td><\/tr>
        Vishay<\/td>SI4190DY-T1-GE3<\/td>PowerPAK SO-8<\/td>60V, 14.5mOhm<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/3331","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=3331"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/3331\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=3331"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=3331"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=3331"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=3331"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}