{"id":3324,"date":"2026-06-01T01:17:42","date_gmt":"2026-06-01T01:17:42","guid":{"rendered":"https:\/\/materialparts.com\/csd17313q2\/"},"modified":"2026-06-01T01:17:42","modified_gmt":"2026-06-01T01:17:42","slug":"csd17313q2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/csd17313q2\/","title":{"rendered":"CSD17313Q2"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The CSD17313Q2 from Texas Instruments is a 30V N-channel NexFET power MOSFET optimized for 5V gate drive. With 24mOhm RDS(on) at VGS=8V and ultra-low 2.1nC gate charge, it minimizes conduction and switching losses in DC-DC converters. Housed in a 2mm x 2mm SON (WSON-6) package with exposed thermal pad.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n30V<\/td>\n<\/tr>\n
RDS(on) at VGS=4.5V<\/td>\n26mOhm typ, 32mOhm max<\/td>\n<\/tr>\n
RDS(on) at VGS=8V<\/td>\n24mOhm typ, 30mOhm max<\/td>\n<\/tr>\n
Continuous Drain (package)<\/td>\n5A<\/td>\n<\/tr>\n
Continuous Drain (silicon, TC=25\u00b0C)<\/td>\n19A<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n2.1nC typ<\/td>\n<\/tr>\n
VGS(th)<\/td>\n1.3V typical<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55 to 150\u00b0C<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nSON 2mm x 2mm (WSON-6)<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Optimized for 5V gate drive<\/li>\n
  • Ultra-low Qg (2.1nC) and Qgd (0.4nC)<\/li>\n
  • Low RDS(on): 24mOhm at VGS=8V<\/li>\n
  • Low thermal resistance SON package<\/li>\n
  • Pb-free, RoHS, halogen-free<\/li>\n
  • Logic-level gate threshold<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • DC-DC buck and boost converters<\/li>\n
    • Battery load management<\/li>\n
    • Point-of-load power modules<\/li>\n
    • Motor drive and load switches<\/li>\n
    • Portable device power management<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The CSD17313Q2 from Texas Instruments is a 30V N-channel NexFET power MOSFET optimized for 5V gate drive. With 24mOhm RDS(on) at VGS=8V and ultra-low 2.1nC gate charge, it minimizes conduction and switching losses in DC-DC converters. Housed in a 2mm x 2mm SON (WSON-6) package with exposed thermal pad. Key Specifications VDS 30V […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[138],"class_list":["post-3324","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-ti"],"acf":{"brief_explanation":"30V N-ch NexFET MOSFET, 24mOhm, 2.1nC Qg, 2x2mm SON, 5V gate drive","date_code":"","package_case":"WSON-6 \/ SON 2mm x 2mm (DQK, 2.0 x 2.0 x 0.75 mm, exposed pad)","in_stock":8760,"datasheet":"https:\/\/www.ti.com\/lit\/ds\/symlink\/csd17313q2.pdf","price":"$0.24 @ 1ku","product_introduction":"The CSD17313Q2 from TI is a 30V N-channel NexFET optimized for 5V gate drive in DC-DC converters. Outstanding FOM (RDS(on) x Qg) with 24mOhm on-resistance and 2.1nC gate charge. The 2mm x 2mm SON with exposed thermal pad achieves 7.4\u00b0C\/W junction-to-case. Pin-compatible with CSD17318Q2 (16.9mOhm variant).","working_principle":"Uses TI NexFET trench MOSFET technology for very low specific on-resistance and gate charge simultaneously. Low gate charge means minimal energy for switching, reducing driver power at high frequencies. Low Qgd\/Qgs ratio (0.57) indicates good Miller plateau immunity in half-bridge. SON exposed pad provides low-impedance thermal path.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1-4<\/td>D<\/td>Drain<\/td>Drain terminals (connected to pad)<\/td><\/tr>
      5<\/td>G<\/td>Gate<\/td>Gate control<\/td><\/tr>
      6<\/td>S<\/td>Source<\/td>Source terminal<\/td><\/tr>
      Pad<\/td>D<\/td>Drain<\/td>Exposed thermal pad (drain)<\/td><\/tr><\/table>","application_scenarios":"
      • Synchronous buck converter low-side FET in POL modules<\/li>
      • Battery load switch with 5V gate drive<\/li>
      • DC-DC boost converter switch in portables<\/li>
      • Motor driver half-bridge with low RDS(on)<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        TI<\/td>CSD17318Q2<\/td>SON 2x2<\/td>16.9mOhm, pin compatible<\/td><\/tr>
        Vishay<\/td>SiS426DN<\/td>PowerPAK 1212-8<\/td>30V, 24mOhm<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/3324","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=3324"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/3324\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=3324"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=3324"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=3324"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=3324"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}