{"id":3201,"date":"2026-05-31T03:20:58","date_gmt":"2026-05-31T03:20:58","guid":{"rendered":"https:\/\/materialparts.com\/irf4905pbf\/"},"modified":"2026-06-06T03:28:46","modified_gmt":"2026-06-06T03:28:46","slug":"irf4905pbf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/irf4905pbf\/","title":{"rendered":"IRF4905PBF"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The IRF4905PBF from Infineon Technologies is a P-channel power MOSFET from the HEXFET family with -55 V drain-source voltage, -74 A continuous drain current, and 20 mohm on-resistance. Utilizing advanced process technology for ultra-low on-resistance, it is packaged in a through-hole TO-220AB package rated for 200 W power dissipation.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n
Drain-Source Voltage (VDSS)<\/td>\n-55 V<\/td>\n<\/tr>\n
On-Resistance (RDS(on))<\/td>\n20 mohm max @ VGS=-10 V<\/td>\n<\/tr>\n
Continuous Drain Current<\/td>\n-74 A @ TC=25\u00b0C<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n200 W @ TC=25\u00b0C<\/td>\n<\/tr>\n
Gate Threshold Voltage<\/td>\n-2.0 V \u81f3 -4.0 V<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n180 nC max<\/td>\n<\/tr>\n
Junction Temperature<\/td>\n-55\u00b0C to 175\u00b0C<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nTO-220AB (through-hole)<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • P-channel MOSFET for high-side switching<\/li>\n
  • Ultra-low on-resistance: 20 mohm max<\/li>\n
  • High current capability: -74 A continuous<\/li>\n
  • Dynamic dv\/dt rating for rugged switching<\/li>\n
  • 175\u00b0C operating junction temperature<\/li>\n
  • Fully avalanche rated<\/li>\n
  • \u5207\u6362\u901f\u5ea6\u5feb<\/li>\n
  • Industry standard TO-220 package<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • High-side load switches and power distribution<\/li>\n
    • DC motor drive and H-bridge circuits<\/li>\n
    • Battery protection and management<\/li>\n
    • Automotive and industrial power switching<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRF4905PBF from Infineon Technologies is a P-channel power MOSFET from the HEXFET family with -55 V drain-source voltage, -74 A continuous drain current, and 20 mohm on-resistance. Utilizing advanced process technology for ultra-low on-resistance, it is packaged in a through-hole TO-220AB package rated for 200 W power dissipation. Key Specifications Drain-Source Voltage […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-3201","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"P-channel power MOSFET, -55 V, -74 A, 20 mohm, TO-220, HEXFET","date_code":"","package_case":"TO-220AB (10.67 x 4.83 x 16.51 mm, through-hole)","in_stock":12000,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf4905pbf.pdf?fileId=5546d462533600a4015355e331c41980","price":"$1.00 @ 1ku","product_introduction":"The IRF4905PBF from Infineon Technologies is a P-channel power MOSFET from the fifth-generation HEXFET family, designed using advanced process technology to achieve extremely low on-resistance per silicon area. With a maximum RDS(on) of 20 mohm at VGS=-10 V and a continuous drain current rating of -74 A at TC=25\u00b0C, the device is well-suited for high-current switching applications where a P-channel MOSFET is required for high-side switching or H-bridge configurations. The -55 V drain-source voltage rating makes it compatible with 12 V, 24 V, and 48 V battery systems. The device is fully avalanche rated, meaning it can withstand repetitive avalanche energy events without damage, which is important in inductive load switching. The TO-220AB through-hole package provides excellent thermal performance with a junction-to-case thermal resistance of 0.75\u00b0C\/W, supporting up to 200 W power dissipation with adequate heatsinking.","working_principle":"The IRF4905PBF operates as a voltage-controlled P-channel MOSFET with three operating regions: (1) In the cutoff region (VGS between 0 V and the threshold voltage), the channel is not formed, and only a small leakage current flows from source to drain. The device blocks voltage up to -55 V between drain and source. (2) In the linear (ohmic) region, when VGS exceeds the threshold voltage in the negative direction (typically -2 V to -4 V), an inversion layer forms in the P-type channel, connecting the source and drain regions. The on-resistance of 20 mohm at VGS=-10 V determines the conduction losses during steady-state operation. (3) During switching transitions, the gate charge (Qg=180 nC) must be supplied or removed through the gate driver. The Miller plateau region requires additional charge (Qgd=86 nC) as the drain voltage transitions, causing the Miller effect. The body diode inherent in the MOSFET structure provides a conduction path from source to drain when the drain voltage exceeds the source voltage, useful in H-bridge and motor drive applications.","pin_description":"
      Pin No.<\/td>Pin Name<\/td>Function<\/td><\/tr>
      1<\/td>Gate<\/td>Gate control input; apply negative voltage relative to source to turn on<\/td><\/tr>
      2<\/td>Drain<\/td>Drain terminal; connects to load<\/td><\/tr>
      3<\/td>Source<\/td>Source terminal; connects to supply voltage<\/td><\/tr>
      Tab<\/td>Drain<\/td>Drain tab (connected to pin 2, provides thermal path)<\/td><\/tr><\/table>","application_scenarios":"
      • High-side load switches in battery-powered systems where P-channel MOSFETs simplify the gate drive circuit (no charge pump needed)<\/li>
      • H-bridge motor drive circuits using complementary P\/N-channel pairs for bidirectional DC motor control<\/li>
      • Battery reverse polarity protection and battery management switches in 12 V and 24 V automotive systems<\/li>
      • Power distribution switches in industrial equipment where the 200 W dissipation capability handles inrush and steady-state loads<\/li><\/ul>","alternative_models":"
        Model<\/td>Brand<\/td>VDSS<\/td>ID<\/td>RDS(on)<\/td><\/tr>
        IRF4905SPbF<\/td>Infineon<\/td>-55 V<\/td>-42 A<\/td>20 mohm<\/td><\/tr>
        IRF4905LPbF<\/td>Infineon<\/td>-55 V<\/td>-42 A<\/td>20 mohm<\/td><\/tr>
        FQP47P06<\/td>onsemi<\/td>-60 V<\/td>-47 A<\/td>26 mohm<\/td><\/tr>
        IPP048N08N3 G<\/td>Infineon<\/td>-80 V<\/td>-60 A<\/td>4.8 mohm<\/td><\/tr>
        STD95P4LLF6<\/td>ST<\/td>-40 V<\/td>-50 A<\/td>18 mohm<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/3201","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=3201"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/3201\/revisions"}],"predecessor-version":[{"id":3282,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/3201\/revisions\/3282"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=3201"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=3201"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=3201"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=3201"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}