{"id":3193,"date":"2026-05-31T03:20:26","date_gmt":"2026-05-31T03:20:26","guid":{"rendered":"https:\/\/materialparts.com\/tsal6100\/"},"modified":"2026-06-06T03:29:06","modified_gmt":"2026-06-06T03:29:06","slug":"tsal6100","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/tsal6100\/","title":{"rendered":"TSAL6100"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The TSAL6100 from Vishay Semiconductors is a high power infrared emitting diode in GaAlAs\/GaAs technology with a peak wavelength of 940 nm. Packaged in a T-1 3\/4 (5 mm) through-hole package, it delivers high radiant intensity of 130 mW\/sr typical at 100 mA with a narrow +\/-10 degree half-angle for directed IR transmission.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n
\u5cf0\u503c\u6ce2\u957f<\/td>\n940 nm<\/td>\n<\/tr>\n
Radiant Intensity<\/td>\n130 mW\/sr typical @ 100 mA<\/td>\n<\/tr>\n
Radiant Power<\/td>\n35 mW typical @ 100 mA<\/td>\n<\/tr>\n
Forward Voltage<\/td>\n1.35 V typical, 1.6 V max @ 100 mA<\/td>\n<\/tr>\n
Half Intensity Angle<\/td>\n+\/-10 degrees<\/td>\n<\/tr>\n
Max Forward Current<\/td>\n100 mA (continuous)<\/td>\n<\/tr>\n
Rise\/Fall Time<\/td>\n800 ns<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-40\u00b0C to 85\u00b0C<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • High radiant power and radiant intensity for extended range<\/li>\n
  • Peak wavelength 940 nm for minimal visible glow<\/li>\n
  • Narrow +\/-10 degree emission angle for directed transmission<\/li>\n
  • Low forward voltage (1.35 V typical)<\/li>\n
  • Suitable for high pulse current operation (up to 1.5 A surge)<\/li>\n
  • Good spectral matching with Si photodetectors<\/li>\n
  • Halogen-free per IEC 61249-2-21<\/li>\n
  • RoHS compliant<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • IR remote controls for high power requirements<\/li>\n
    • Free air transmission systems and light barriers<\/li>\n
    • Optical counters and card readers<\/li>\n
    • IR source for smoke detectors<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The TSAL6100 from Vishay Semiconductors is a high power infrared emitting diode in GaAlAs\/GaAs technology with a peak wavelength of 940 nm. Packaged in a T-1 3\/4 (5 mm) through-hole package, it delivers high radiant intensity of 130 mW\/sr typical at 100 mA with a narrow +\/-10 degree half-angle for directed IR transmission. […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,42],"tags":[],"chip_brand":[136],"class_list":["post-3193","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-sensors","chip_brand-vishay"],"acf":{"brief_explanation":"940 nm high-power IR LED, 130 mW\/sr, +\/-10 deg, T-1 3\/4 through-hole, GaAlAs\/GaAs","date_code":"","package_case":"T-1 3\/4 (5 mm, Radial, Through-Hole)","in_stock":6200,"datasheet":"https:\/\/www.vishay.com\/docs\/81009\/tsal6100.pdf","price":"$0.35 @ 1ku","product_introduction":"The TSAL6100 is a high-power infrared emitting diode from Vishay Semiconductors, fabricated in GaAlAs\/GaAs multi-quantum-well (MQW) technology. It emits at a peak wavelength of 940 nm, which is nearly invisible to the human eye, making it ideal for remote control and free-space optical communication applications. The device delivers a typical radiant intensity of 130 mW\/sr at 100 mA forward current, with a total radiant power of 35 mW. The narrow emission angle of +\/-10 degrees concentrates the infrared energy for extended-range directed transmission. The T-1 3\/4 (5 mm diameter) through-hole package provides reliable mechanical mounting and excellent optical characteristics. The low forward voltage of 1.35 V at 100 mA enables efficient operation from low-voltage supplies. The TSAL6100 also supports high pulse current operation up to 1.5 A for short durations, making it suitable for high-power burst-mode IR transmission protocols.","working_principle":"The TSAL6100 operates as a forward-biased pn junction in GaAlAs\/GaAs semiconductor material: (1) When current flows through the junction in the forward direction, electrons recombine with holes in the active region. In GaAlAs\/GaAs MQW structures, this recombination releases energy as photons at a wavelength determined by the bandgap of the active layer, which is 940 nm for this device. (2) The photon emission is isotropic from the junction, but the molded lens of the T-1 3\/4 package focuses the emission into a narrow beam with a half-intensity angle of +\/-10 degrees, concentrating the radiant intensity to 130 mW\/sr. (3) The radiant power is proportional to the forward current, allowing the device to be modulated by varying the drive current. At high pulse currents (up to 1.5 A), the radiant intensity increases to approximately 650 mW\/sr, enabling long-range transmission. The rise and fall times of 800 ns support modulation frequencies up to several hundred kHz for standard IR remote control protocols.","pin_description":"
      Pin No.<\/td>Pin Name<\/td>Function<\/td><\/tr>
      1<\/td>Anode<\/td>Positive terminal; connect to supply through current-limiting resistor<\/td><\/tr>
      2<\/td>Cathode<\/td>Negative terminal; connect to ground or driver transistor collector<\/td><\/tr><\/table>","application_scenarios":"
      • IR remote control units for consumer electronics (TVs, air conditioners) requiring extended operating range with narrow beam<\/li>
      • Free-space optical transmission systems and IR light barriers for object detection and counting<\/li>
      • Smoke detector IR sources where high radiant power and 940 nm wavelength ensure reliable particle detection<\/li>
      • Optical card readers and encoders using directed IR beams for position sensing<\/li><\/ul>","alternative_models":"
        Model<\/td>Brand<\/td>Wavelength<\/td>Intensity<\/td>Angle<\/td><\/tr>
        TSAL6400<\/td>Vishay<\/td>940 nm<\/td>40 mW\/sr<\/td>+\/-30 deg<\/td><\/tr>
        TSHF6410<\/td>Vishay<\/td>870 nm<\/td>80 mW\/sr<\/td>+\/-20 deg<\/td><\/tr>
        SFH 4550<\/td>ams-OSRAM<\/td>860 nm<\/td>700 mW\/sr<\/td>+\/-3 deg<\/td><\/tr>
        VSLB3940<\/td>Vishay<\/td>940 nm<\/td>50 mW\/sr<\/td>+\/-20 deg<\/td><\/tr>
        TSAL6200<\/td>Vishay<\/td>940 nm<\/td>35 mW\/sr<\/td>+\/-17 deg<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/3193","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=3193"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/3193\/revisions"}],"predecessor-version":[{"id":3274,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/3193\/revisions\/3274"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=3193"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=3193"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=3193"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=3193"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}