{"id":2990,"date":"2026-05-29T01:32:01","date_gmt":"2026-05-29T01:32:01","guid":{"rendered":"https:\/\/materialparts.com\/irf9z24npbf\/"},"modified":"2026-05-29T01:32:01","modified_gmt":"2026-05-29T01:32:01","slug":"irf9z24npbf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/irf9z24npbf\/","title":{"rendered":"IRF9Z24NPBF"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The IRF9Z24NPBF from Infineon Technologies (formerly International Rectifier) is a P-channel HEXFET power MOSFET rated at -55 V drain-source voltage and -12 A continuous drain current. Packaged in a TO-220AB through-hole package, it features an on-resistance of 0.175 Ohm at VGS = -10 V. The device is fully avalanche rated for rugged switching applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
\u6781\u6027<\/td>\nP-Channel<\/td>\n<\/tr>\n
VDS (Drain-Source Voltage)<\/td>\n-55 V<\/td>\n<\/tr>\n
ID (Continuous Drain Current)<\/td>\n-12 A (TC=25\u00b0C)<\/td>\n<\/tr>\n
RDS(on)<\/td>\n0.175 Ohm @ VGS=-10V<\/td>\n<\/tr>\n
VGS(th) (Threshold Voltage)<\/td>\n-2.0 to -4.0 V<\/td>\n<\/tr>\n
Qg (Total Gate Charge)<\/td>\n19 nC @ VGS=-10V<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n45 W (TC=25\u00b0C)<\/td>\n<\/tr>\n
dv\/dt Rating<\/td>\n5.0 V\/ns<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nTO-220AB<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Advanced process technology for low RDS(on)<\/li>\n
  • Dynamic dv\/dt rating<\/li>\n
  • 175\u00b0C operating temperature capability<\/li>\n
  • Fully avalanche rated<\/li>\n
  • \u5207\u6362\u901f\u5ea6\u5feb<\/li>\n
  • Fifth generation HEXFET technology<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Switch-mode power supplies (high-side switching)<\/li>\n
    • Motor drive and H-bridge circuits<\/li>\n
    • Battery management and load switching<\/li>\n

\u76f4\u6d41-\u76f4\u6d41\u8f6c\u6362\u5668<\/td>\n<\/tr>\n
\u6c7d\u8f66\u52a8\u529b\u7cfb\u7edf<\/td>\n<\/tr>\n<\/table><\/ul>","protected":false},"excerpt":{"rendered":"

Product Overview The IRF9Z24NPBF from Infineon Technologies (formerly International Rectifier) is a P-channel HEXFET power MOSFET rated at -55 V drain-source voltage and -12 A continuous drain current. Packaged in a TO-220AB through-hole package, it features an on-resistance of 0.175 Ohm at VGS = -10 V. The device is fully avalanche rated for rugged switching […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-2990","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"P-Channel power MOSFET, -55V, -12A, 0.175 Ohm RDS(on), TO-220AB, fully avalanche rated","date_code":"","package_case":"TO-220AB (10.54 x 4.69 x 19.30 mm, 3 pins + tab)","in_stock":11526,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf9z24npbf.pdf","price":"","product_introduction":"The IRF9Z24NPBF is a P-channel HEXFET power MOSFET from Infineon Technologies, designed using fifth-generation advanced processing techniques to achieve extremely low on-resistance per silicon area. With a drain-source voltage rating of -55 V and continuous drain current of -12 A, the device is well-suited for high-side switching applications. The TO-220AB package provides excellent thermal performance with a junction-to-case thermal resistance of 3.3\u00b0C\/W, enabling power dissipation up to 45 W at 25\u00b0C case temperature. The device is fully avalanche rated, providing robustness in unclamped inductive switching scenarios.","working_principle":"As a P-channel enhancement-mode MOSFET, the IRF9Z24NPBF conducts when the gate-to-source voltage is driven negative below the threshold voltage (typically -2 to -4 V). Current flows from source to drain through the P-type channel formed beneath the gate oxide. The low RDS(on) of 0.175 Ohm minimizes conduction losses during the on-state. During switching transitions, the gate charge (19 nC) must be supplied or removed to charge\/discharge the input capacitance (350 pF). The integral body diode provides a reverse conduction path and can handle repetitive avalanche energy, making the device suitable for inductive load switching. The maximum dv\/dt rating of 5.0 V\/ns prevents parasitic turn-on during fast transitions.","pin_description":"
Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
1<\/td>Gate<\/td>Input<\/td>MOSFET gate control<\/td><\/tr>
2<\/td>Drain<\/td>Output<\/td>Drain terminal (connected to tab)<\/td><\/tr>
3<\/td>Source<\/td>Power<\/td>Source terminal<\/td><\/tr>
Tab<\/td>Drain<\/td>Output<\/td>Drain (connected to pin 2)<\/td><\/tr><\/table>","application_scenarios":"
  • High-side load switches in battery-powered devices<\/li>
  • H-bridge motor drive circuits (P-channel upper leg)<\/li>
  • Reverse polarity protection circuits<\/li>
  • DC-DC buck-boost converter output stages<\/li>
  • Automotive body electronics and lighting control<\/li><\/ul>","alternative_models":"
    Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
    Infineon<\/td>IRF9Z24NS<\/td>D2PAK<\/td>SMD version<\/td><\/tr>
    Vishay<\/td>IRF9Z24NPBF<\/td>TO-220AB<\/td>Second source equivalent<\/td><\/tr>
    Infineon<\/td>IRF9Z34NPBF<\/td>TO-220AB<\/td>Higher current (-18A), lower RDS(on)<\/td><\/tr>
    onsemi<\/td>FQP27P06<\/td>TO-220<\/td>-60V, -27A alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/2990","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=2990"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/2990\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=2990"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=2990"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=2990"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=2990"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}