{"id":2803,"date":"2026-05-26T01:23:21","date_gmt":"2026-05-26T01:23:21","guid":{"rendered":"https:\/\/materialparts.com\/fm25cl64b\/"},"modified":"2026-05-26T01:23:21","modified_gmt":"2026-05-26T01:23:21","slug":"fm25cl64b","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/fm25cl64b\/","title":{"rendered":"FM25CL64B"},"content":{"rendered":"<h2>\u4ea7\u54c1\u6982\u89c8<\/h2>\n<p>The FM25CL64B from Infineon Technologies is a 64Kbit (8K x 8) serial F-RAM with SPI interface. As a non-volatile memory employing advanced ferroelectric process, it provides NoDelay writes at bus speed, 100 trillion read\/write cycle endurance, and 151-year data retention, offering a superior drop-in replacement for serial EEPROM and Flash memory.<\/p>\n<h2>\u4e3b\u8981\u89c4\u683c<\/h2>\n<table>\n<tr>\n<td>Memory Size<\/td>\n<td>64Kbit (8KB)<\/td>\n<\/tr>\n<tr>\n<td>Organization<\/td>\n<td>8K x 8<\/td>\n<\/tr>\n<tr>\n<td>Interface<\/td>\n<td>SPI (Mode 0 and 3)<\/td>\n<\/tr>\n<tr>\n<td>Max Clock Frequency<\/td>\n<td>20MHz<\/td>\n<\/tr>\n<tr>\n<td>\u7535\u6e90\u7535\u538b<\/td>\n<td>2.7V to 3.65V<\/td>\n<\/tr>\n<tr>\n<td>Write Endurance<\/td>\n<td>100 trillion (10^14) cycles<\/td>\n<\/tr>\n<tr>\n<td>Data Retention<\/td>\n<td>151 years @ 65\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>Active Current<\/td>\n<td>200\u03bcA @ 1MHz<\/td>\n<\/tr>\n<tr>\n<td>Standby Current<\/td>\n<td>3\u03bcA typ.<\/td>\n<\/tr>\n<tr>\n<td>Package Options<\/td>\n<td>SOIC-8, DFN-8<\/td>\n<\/tr>\n<tr>\n<td>\u5de5\u4f5c\u6e29\u5ea6<\/td>\n<td>-40\u00b0C to +85\u00b0C<\/td>\n<\/tr>\n<\/table>\n<h2>\u7279\u70b9<\/h2>\n<ul>\n<li>NoDelay writes at bus speed<\/li>\n<li>100 trillion (10^14) read\/write cycle endurance<\/li>\n<li>151-year data retention at 65\u00b0C<\/li>\n<li>Hardware and software write protection<\/li>\n<li>Supports SPI Mode 0 and Mode 3<\/li>\n<li>Direct hardware replacement for serial EEPROM<\/li>\n<li>Low power: 200\u03bcA active, 3\u03bcA standby<\/li>\n<li>AEC-Q100 qualified<\/li>\n<\/ul>\n<h2>\u5e94\u7528<\/h2>\n<ul>\n<li>Industrial automation and data logging<\/li>\n<li>Smart metering<\/li>\n<li>Automotive electronics<\/li>\n<li>Medical equipment<\/li>\n<li>Enterprise storage systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The FM25CL64B from Infineon Technologies is a 64Kbit (8K x 8) serial F-RAM with SPI interface. As a non-volatile memory employing advanced ferroelectric process, it provides NoDelay writes at bus speed, 100 trillion read\/write cycle endurance, and 151-year data retention, offering a superior drop-in replacement for serial EEPROM and Flash memory. Key Specifications [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":2819,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[173],"class_list":["post-2803","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","chip_brand-infineon"],"acf":{"brief_explanation":"64Kbit SPI F-RAM, 20MHz, 10^14 endurance, NoDelay writes, SOIC-8\/DFN-8","date_code":"","package_case":"SOIC-8 (4.9 x 3.9mm) \/ DFN-8 (4.0 x 3.0mm)","in_stock":13087,"datasheet":"https:\/\/www.infineon.com\/part\/FM25CL64B-GTR","price":"$2.95 @ 100u","product_introduction":"The FM25CL64B from Infineon Technologies is the base product number for a family of 64Kbit (8K x 8) serial F-RAM devices with SPI interface. Using an advanced ferroelectric process, this non-volatile memory performs read and write operations similar to RAM with no write delays. With 100 trillion read\/write cycle endurance and 151-year data retention, it eliminates the need for wear leveling and provides a direct hardware replacement for serial EEPROM and Flash memory in applications requiring frequent or rapid writes.","working_principle":"The FM25CL64B uses ferroelectric RAM (F-RAM) technology where each memory cell stores data using ferroelectric polarization of a perovskite crystal. Unlike conventional Flash or EEPROM that use floating-gate charge storage requiring high-voltage erase\/program cycles, F-RAM writes data by applying an electric field that switches the ferroelectric polarization. This process is inherently fast and does not require charge pumps, enabling NoDelay bus-speed writes. The read-restore mechanism ensures data integrity: each read operation also refreshes the cell. The SPI interface supports both Mode 0 and Mode 3 at clock rates up to 20MHz.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>CS<\/td><td>Input<\/td><td>Active-low chip select<\/td><\/tr><tr><td>2<\/td><td>SO<\/td><td>Output<\/td><td>SPI serial data output<\/td><\/tr><tr><td>3<\/td><td>WP<\/td><td>Input<\/td><td>Write protect input<\/td><\/tr><tr><td>4<\/td><td>VSS<\/td><td>Power<\/td><td>Ground<\/td><\/tr><tr><td>5<\/td><td>SI<\/td><td>Input<\/td><td>SPI serial data input<\/td><\/tr><tr><td>6<\/td><td>SCK<\/td><td>Input<\/td><td>SPI serial clock<\/td><\/tr><tr><td>7<\/td><td>HOLD<\/td><td>Input<\/td><td>Suspend serial operation<\/td><\/tr><tr><td>8<\/td><td>VDD<\/td><td>Power<\/td><td>Supply voltage (2.7-3.65V)<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Industrial data logging with high-frequency writes<\/li><li>Smart meter cumulative energy and event storage<\/li><li>Automotive ECU calibration and configuration data<\/li><li>Medical device patient data and event logs<\/li><li>Enterprise RAID controller write-log caching<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Infineon<\/td><td>FM25CL64B-GTR<\/td><td>SOIC-8<\/td><td>Tape and reel version<\/td><\/tr><tr><td>Infineon<\/td><td>FM25CL64B-DGTR<\/td><td>DFN-8<\/td><td>DFN package version<\/td><\/tr><tr><td>Infineon<\/td><td>FM25V02A-GTR<\/td><td>SOIC-8<\/td><td>256Kbit F-RAM upgrade<\/td><\/tr><tr><td>Rohm<\/td><td>BR24G128FVT-3AGE2<\/td><td>SOIC-8<\/td><td>128Kbit EEPROM alternative<\/td><\/tr><tr><td>Microchip<\/td><td>AT25SF041-SSHB<\/td><td>SOIC-8<\/td><td>4Mbit SPI Flash alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/2803","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=2803"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/2803\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media\/2819"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=2803"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=2803"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=2803"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=2803"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}