{"id":2448,"date":"2026-05-20T04:47:58","date_gmt":"2026-05-20T04:47:58","guid":{"rendered":"https:\/\/materialparts.com\/fdt86244\/"},"modified":"2026-05-20T04:47:58","modified_gmt":"2026-05-20T04:47:58","slug":"fdt86244","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/fdt86244\/","title":{"rendered":"FDT86244"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The FDT86244 from onsemi is an N-Channel Power Trench MOSFET rated at 150V, 2.8A with 128mOhm maximum on-resistance. Utilizing Shielded Gate technology, it delivers low RDS(on), fast switching speed, and 100% UIL tested ruggedness in a compact SOT-223 surface-mount package.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u5236\u9020\u5546<\/td>\nonsemi<\/td>\n<\/tr>\n
Channel Type<\/td>\nN-Channel Enhancement<\/td>\n<\/tr>\n
VDS (Drain-Source Voltage)<\/td>\n150V<\/td>\n<\/tr>\n
VGS (Gate-Source Voltage)<\/td>\n+-20V<\/td>\n<\/tr>\n
ID (Continuous Drain Current)<\/td>\n2.8A @ TA=25C<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n128mOhm @ VGS=10V<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n178mOhm @ VGS=6V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n2.0V to 4.0V (typ 3.1V)<\/td>\n<\/tr>\n
Total Gate Charge<\/td>\n4.9nC @ VGS=10V<\/td>\n<\/tr>\n
Input Capacitance<\/td>\n295pF @ VDS=75V<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n2.2W @ TA=25C<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nSOT-223-4<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55C to +150C<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Shielded Gate MOSFET technology<\/li>\n
  • Low RDS(on): 128mOhm max at VGS=10V<\/li>\n
  • High performance trench technology for extremely low RDS(on)<\/li>\n
  • Fast switching speed: 1.3ns rise, 2.4ns fall<\/li>\n
  • 100% UIL (Unclamped Inductive Load) tested<\/li>\n
  • 12mJ single pulse avalanche energy rating<\/li>\n
  • Low gate charge: 4.9nC typical<\/li>\n
  • High power and current handling in SOT-223 package<\/li>\n
  • RoHS compliant<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Load switch applications<\/li>\n
    • Primary switch in low-power converters<\/li>\n
    • Consumer appliances<\/li>\n
    • Motor drive and solenoid control<\/li>\n
    • Power management circuits<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The FDT86244 from onsemi is an N-Channel Power Trench MOSFET rated at 150V, 2.8A with 128mOhm maximum on-resistance. Utilizing Shielded Gate technology, it delivers low RDS(on), fast switching speed, and 100% UIL tested ruggedness in a compact SOT-223 surface-mount package. Key Specifications Manufacturer onsemi Channel Type N-Channel Enhancement VDS (Drain-Source Voltage) 150V VGS […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-2448","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"N-Ch MOSFET 150V 2.8A 128mOhm, Shielded Gate, SOT-223, fast switching, 100% UIL tested","date_code":"","package_case":"SOT-223-4 (6.5 x 3.5 x 1.69 mm)","in_stock":5870,"datasheet":"https:\/\/www.onsemi.com\/products\/discrete-power-modules\/mosfets\/small-signal-mosfets\/fdt86244","price":"$0.29 @ 1ku","product_introduction":"The onsemi FDT86244 is an N-Channel Power Trench MOSFET produced using advanced Shielded Gate technology. This process has been optimized for low RDS(on), fast switching performance, and ruggedness. The device features a maximum drain-source voltage of 150V and continuous drain current of 2.8A, with RDS(on) of just 128mOhm at VGS=10V. The Shielded Gate construction reduces gate-to-drain charge (Miller charge) for faster switching transitions. With a total gate charge of only 4.9nC at VGS=10V, the FDT86244 is ideal for high-frequency switching applications. The 100% UIL testing ensures reliable avalanche operation. The SOT-223 package provides a good balance of power handling capability and board space efficiency.","working_principle":"The FDT86244 operates as a voltage-controlled N-Channel enhancement-mode MOSFET: 1) Gate Control: When VGS exceeds the threshold voltage (2.0-4.0V), the gate electric field creates an inversion layer in the P-body region, forming a conductive channel between drain and source. The Shielded Gate technology places a shield electrode between the gate and drain, reducing the gate-to-drain overlap capacitance and Miller charge for faster switching. 2) Conduction: At VGS=10V, the channel is fully enhanced, providing RDS(on) of 106mOhm typical. The trench structure increases cell density, reducing conduction losses. 3) Switching: The low gate charge (4.9nC total) allows rapid charging and discharging of the gate capacitance, enabling turn-on delay of 5.3ns and rise time of 1.3ns for high-frequency operation. 4) Avalanche: The 100% UIL test at 5A\/135V\/1mH guarantees the device can safely absorb inductive energy during unclamped switching events.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>MOSFET gate (control terminal)<\/td><\/tr>
      2<\/td>Drain<\/td>Output<\/td>MOSFET drain (connected to tab)<\/td><\/tr>
      3<\/td>Source<\/td>Output<\/td>MOSFET source<\/td><\/tr>
      4 (Tab)<\/td>Drain<\/td>Output<\/td>Drain connection \/ thermal pad<\/td><\/tr><\/table>","application_scenarios":"
      • Primary switch in low-power DC-DC converters and flyback supplies<\/li>
      • Load switch for battery-powered consumer electronics<\/li>
      • Motor drive and solenoid control in industrial systems<\/li>
      • Power management and hot-swap circuits<\/li>
      • LED driver switching element<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        onsemi<\/td>FDD86244<\/td>DPAK<\/td>Same die, DPAK package<\/td><\/tr>
        onsemi<\/td>FDT86142<\/td>SOT-223<\/td>200V, 1.7A, higher voltage<\/td><\/tr>
        Infineon<\/td>BSZ150N150NS3<\/td>PG-TDSON-3<\/td>150V, 13A, lower RDS(on)<\/td><\/tr>
        Vishay<\/td>SI7425DN-T1-GE3<\/td>PowerPAK 1212-8<\/td>150V, 2.5A, small footprint<\/td><\/tr>
        ST<\/td>STB150N150T4<\/td>D2PAK<\/td>150V, higher current<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/2448","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=2448"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/2448\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=2448"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=2448"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=2448"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=2448"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}