{"id":2151,"date":"2026-05-14T06:45:22","date_gmt":"2026-05-14T06:45:22","guid":{"rendered":"https:\/\/materialparts.com\/at45db081e-shn-t\/"},"modified":"2026-05-14T06:45:22","modified_gmt":"2026-05-14T06:45:22","slug":"at45db081e-shn-t","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/at45db081e-shn-t\/","title":{"rendered":"AT45DB081E-SHN-T"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The AT45DB081E-SHN-T is an 8Mbit (1M x 8) DataFlash serial NOR flash memory from Renesas (formerly Microchip\/Atmel), featuring a dual-SPI interface for fast read operations. It integrates two 256-byte SRAM buffers for page-level data accumulation before program operations, enabling efficient write handling without external RAM. The device supports SPI compatible serial interface with clock rates up to 85MHz (170MHz equivalent in dual-SPI mode) and operates from a single 2.5V to 3.6V supply.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u5236\u9020\u5546<\/td>\nRenesas Electronics (formerly Microchip\/Atmel)<\/td>\n<\/tr>\n
Density<\/td>\n8Mbit (1MByte)<\/td>\n<\/tr>\n
Memory Organization<\/td>\n4096 pages x 264 bytes\/page (256 + 8 ECC)<\/td>\n<\/tr>\n
SRAM Buffers<\/td>\n2 x 264 bytes<\/td>\n<\/tr>\n
Interface<\/td>\nSPI (Mode 0 and 3), Dual-SPI<\/td>\n<\/tr>\n
Max Clock Frequency<\/td>\n85MHz (SPI), 85MHz x2 (Dual Output)<\/td>\n<\/tr>\n
Program\/Erase Cycles<\/td>\n100,000 minimum per page<\/td>\n<\/tr>\n
Data Retention<\/td>\n20 years minimum<\/td>\n<\/tr>\n
\u7535\u6e90\u7535\u538b<\/td>\n2.5V to 3.6V<\/td>\n<\/tr>\n
Active Read Current<\/td>\n6mA typical<\/td>\n<\/tr>\n
Standby Current<\/td>\n15\u00b5A typical<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-40\u00b0C to +85\u00b0C<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nUSON-8 (4 x 3mm, 0.8mm pitch)<\/td>\n<\/tr>\n
\u9884\u7b97\u4ef7\u683c<\/td>\n$0.65 @ 1ku<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • 8Mbit DataFlash with dual-SPI read for up to 170Mbps data throughput<\/li>\n
  • Two 264-byte SRAM buffers for page data accumulation and background programming<\/li>\n
  • SPI compatible: Mode 0 and Mode 3<\/li>\n
  • Page program operation: 264 bytes in 4ms typical<\/li>\n
  • Continuous array read for seamless linear data access<\/li>\n
  • Built-in ECC (8 bytes per 256-byte page) for data integrity<\/li>\n
  • Flexible sector and block erase (page, block, sector, chip erase)<\/li>\n
  • Hardware and software write protection<\/li>\n
  • Deep power-down mode with 15\u00b5A standby current<\/li>\n
  • Operating from single 2.5V to 3.6V supply<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Data logging and parameter storage in embedded systems<\/li>\n
    • Firmware and boot code storage<\/li>\n
    • Audio and image storage in consumer electronics<\/li>\n
    • Industrial configuration and calibration data storage<\/li>\n
    • Wearable and IoT device non-volatile memory<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The AT45DB081E-SHN-T is an 8Mbit (1M x 8) DataFlash serial NOR flash memory from Renesas (formerly Microchip\/Atmel), featuring a dual-SPI interface for fast read operations. It integrates two 256-byte SRAM buffers for page-level data accumulation before program operations, enabling efficient write handling without external RAM. The device supports SPI compatible serial interface with […]<\/p>\n","protected":false},"author":2,"featured_media":2164,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[12],"class_list":["post-2151","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","chip_brand-renesas"],"acf":{"brief_explanation":"8Mbit DataFlash, dual-SPI 85MHz, 2x264B SRAM buffers, USON-8 (4x3mm), page-based ECC","date_code":"","package_case":"USON-8 (4 x 3 x 0.6mm, 0.8mm pitch)","in_stock":4500,"datasheet":"https:\/\/www.renesas.com\/products\/AT45DB081E","price":"$0.65 @ 1ku","product_introduction":"The AT45DB081E-SHN-T is an 8Mbit (1MByte) DataFlash serial NOR flash memory from Renesas Electronics, originally developed by Atmel. Unlike standard SPI flash devices, the DataFlash architecture integrates two 264-byte SRAM buffers that allow page data accumulation and background programming, enabling efficient write operations without blocking read access. The device supports SPI-compatible serial interface (Mode 0 and 3) with clock rates up to 85MHz, plus dual-output SPI that doubles effective read throughput to 170Mbps. Each 264-byte page includes 8 bytes of ECC data for enhanced data integrity. The USON-8 (4 x 3mm) package provides a minimal footprint for space-constrained designs, while the 2.5V to 3.6V supply range supports direct connection to 3.3V systems.","working_principle":"

      DataFlash Architecture<\/h3>\n

      Unlike standard NOR flash that requires erase-before-write at sector boundaries, the AT45DB081E uses a page-based programming model. Each 264-byte page (256 data + 8 ECC) can be individually programmed without prior erasure. The two internal SRAM buffers (Buffer 1 and Buffer 2) allow the host to accumulate data into a buffer while the other buffer is being programmed into the flash array, enabling simultaneous read and write operations.<\/p>\n\n

      Buffer-to-Page Programming<\/h3>\n

      The typical write sequence involves: (1) loading data into an SRAM buffer via SPI, (2) issuing a Buffer-to-Page transfer command that programs the buffer contents into the flash array. This two-step process allows the host to verify data before committing to flash. A direct Page-Program command combines both steps into a single operation for simpler firmware.<\/p>\n\n

      Dual-SPI Read<\/h3>\n

      In dual-output mode, the SO pin and SI pin both output data on alternating clock edges, doubling the data rate from 1 bit per clock to 2 bits per clock. At 85MHz clock, this achieves 170Mbps effective throughput, significantly faster than standard SPI read for large data transfers such as boot code loading.<\/p>\n\n

      ECC and Data Integrity<\/h3>\n

      Each 264-byte page includes 8 bytes of internal ECC data. The ECC logic transparently detects and corrects single-bit errors during read operations, enhancing long-term data reliability. The 100,000 program\/erase cycle endurance per page and 20-year data retention ensure robust long-term storage.<\/p>","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>CS<\/td>Input<\/td>Chip select (active low)<\/td><\/tr>\n
      2<\/td>SO \/ SIO1<\/td>Output\/I\/O<\/td>Serial data output \/ dual-SPI data 1<\/td><\/tr>\n
      3<\/td>WP<\/td>Input<\/td>Hardware write protect (active low)<\/td><\/tr>\n
      4<\/td>VSS<\/td>Ground<\/td>Ground<\/td><\/tr>\n
      5<\/td>SI \/ SIO0<\/td>Input\/I\/O<\/td>Serial data input \/ dual-SPI data 0<\/td><\/tr>\n
      6<\/td>SCK<\/td>Input<\/td>Serial clock input<\/td><\/tr>\n
      7<\/td>HOLD \/ RESET<\/td>Input<\/td>Hold or reset (active low, pin configurable)<\/td><\/tr>\n
      8<\/td>VDD<\/td>Power<\/td>Supply voltage (2.5V to 3.6V)<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • Data logging and parameter storage in embedded systems where the dual SRAM buffer architecture enables simultaneous read and write operations<\/li>\n
      • Firmware and boot code storage requiring fast dual-SPI read at 170Mbps for rapid startup<\/li>\n
      • Audio and image storage in consumer electronics needing page-based ECC for data integrity<\/li>\n
      • Industrial calibration and configuration data storage requiring 100K cycle endurance and 20-year retention<\/li>\n
      • Wearable and IoT devices where compact USON-8 (4x3mm) footprint and 15\u00b5A standby conserve board space and battery<\/li>\n<\/ul>","alternative_models":"\n
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>\n
        Renesas<\/td>AT45DB041E-SHN-T<\/td>USON-8<\/td>4Mbit version, same family, lower density<\/td><\/tr>\n
        Renesas<\/td>AT45DB161E-SHN-T<\/td>USON-8<\/td>16Mbit version, same family, higher density<\/td><\/tr>\n
        Macronix<\/td>MX25L8006EM1I-12G<\/td>USON-8<\/td>8Mbit standard SPI flash, no SRAM buffers<\/td><\/tr>\n
        Winbond<\/td>W25Q80DVSNIG<\/td>SOIC-8<\/td>8Mbit standard SPI flash, dual\/quad SPI<\/td><\/tr>\n
        Microchip<\/td>SST25VF080B-50-4C-S2AF<\/td>USON-8<\/td>8Mbit SPI flash, 50MHz, single I\/O<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/2151","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=2151"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/2151\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media\/2164"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=2151"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=2151"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=2151"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=2151"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}