Alpha & Omega Semiconductor \u7684 AON7410 \u662f\u4e00\u6b3e 30 V N \u6c9f\u9053\u589e\u5f3a\u578b\u529f\u7387 MOSFET\uff0c\u91c7\u7528\u5e26\u88f8\u9732\u710a\u76d8\u7684 DFN 3x3A-8L \u5c01\u88c5\u3002\u5b83\u5728 VGS = 10 V \u65f6\u5177\u6709 20 mOhm \u6700\u5927 RDS(on)\u300124 A \u8fde\u7eed\u6f0f\u6781\u7535\u6d41\u30019.8 nC \u5178\u578b\u6805\u6781\u7535\u8377\u548c 20 W \u529f\u7387\u8017\u6563\u3002\u8be5\u5668\u4ef6\u91c7\u7528\u5148\u8fdb\u7684\u6c9f\u69fd\u6280\u672f\u5236\u9020\uff0c\u4e3b\u8981\u9488\u5bf9\u76f4\u6d41-\u76f4\u6d41\u8f6c\u6362\u5668\u548c\u8d1f\u8f7d\u5f00\u5173\u5e94\u7528\u3002100% \u5df2\u901a\u8fc7 UIS \u548c Rg \u6d4b\u8bd5\u3002\u65e0\u5364\u7d20\uff0c\u7b26\u5408 RoHS \u89c4\u8303\u3002\u5de5\u4f5c\u7ed3\u6e29\u8303\u56f4\u4e3a -55C \u81f3 +150C\u3002\u5377\u5e26\u5305\u88c5\uff0c\u6bcf\u5377 5000 \u4ef6\u3002.<\/p>","protected":false},"excerpt":{"rendered":"
The AON7410 from Alpha & Omega Semiconductor is a 30 V N-channel enhancement-mode power MOSFET in a DFN 3x3A-8L package with exposed pad. It features 20 mOhm maximum RDS(on) at VGS = 10 V, 24 A continuous drain current, 9.8 nC typical gate charge, and 20 W power dissipation. Fabricated with advanced trench technology, the […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,55],"tags":[],"chip_brand":[174],"class_list":["post-2066","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-transistors","chip_brand-aosmd"],"acf":{"brief_explanation":"30V N-ch MOSFET, 24A, 20mOhm@10V, 9.8nC Qg, DFN 3x3 EP, DC-DC\/load switch","date_code":"","package_case":"DFN 3x3A-8L EP (3.0 x 3.0 x 0.78 mm, 0.65mm pitch, exposed pad)","in_stock":3538320,"datasheet":"https:\/\/www.aosmd.com\/res\/data_sheets\/AON7410.pdf","price":"$0.12 (5K+ pcs)","product_introduction":"The AON7410 from Alpha & Omega Semiconductor is a 30 V N-channel enhancement-mode power MOSFET in a thermally enhanced DFN 3x3A-8L package with exposed pad. The device uses advanced trench technology to deliver excellent RDS(on) with low gate charge, making it well-suited for DC-DC converter and load switch applications.\n\nWith 20 mOhm maximum RDS(on) at VGS = 10 V (26 mOhm at 4.5 V) and 24 A continuous drain current, the AON7410 provides high current handling in a compact 9 mm2 footprint. The 9.8 nC typical gate charge at 10 V enables efficient switching at frequencies up to several hundred kHz with minimal gate-drive loss.\n\nThe DFN 3x3A-8L package features a large exposed thermal pad on the bottom that provides a low-impedance thermal path to the PCB. With RthJA of approximately 50-60C\/W on a 1 in2 FR4 board with 2 oz copper, the package can dissipate up to 20 W at case temperatures up to 25C, or 3.1 W in free air at 25C ambient.\n\nThe device is 100% UIS (Unclamped Inductive Switching) tested and 100% Rg tested, ensuring reliable avalanche energy handling and consistent gate resistance for predictable switching behavior. The 1.4-2.5 V threshold voltage range provides logic-level drive capability from 2.5 V and above.\n\nThe AON7410 is halogen-free, antimony-free, and RoHS compliant. It is qualified for industrial applications with a maximum junction temperature of 150C. Tape-and-reel packaging contains 5000 units per reel for automated SMT assembly.","working_principle":"**N-Channel Trench MOSFET:** The AON7410 uses trench gate technology where vertical trenches are etched into the silicon and the gate electrode is formed inside these trenches. This creates a large channel width per unit die area, achieving the low 20 mOhm RDS(on). Current flows vertically from source (top) through the channel to drain (bottom\/exposed pad).\n\n**Enhancement-Mode Operation:** With VGS below the threshold (1.4-2.5 V), no channel forms and the device is off. When VGS exceeds VGS(th), an inversion layer forms under the gate oxide, creating a conductive N-type channel. RDS(on) decreases with increasing VGS as the channel becomes more enhanced.\n\n**DFN 3x3A-8L Pinout:** The 8-pin DFN package dedicates pins 1-3 to source, pin 4 to gate, and pins 5-8 to drain (plus exposed pad = drain). This multi-pin drain\/source configuration minimizes package parasitic inductance and resistance. The exposed pad serves as both the primary thermal path and the drain connection.\n\n**Avalanche Rating:** The 100% UIS testing guarantees each device can safely absorb inductive energy during unclamped switching events. The device is rated for 17 A avalanche current and 14 mJ single-pulse avalanche energy.","pin_description":"
| Pin<\/th> | Name<\/th> | Type<\/th> | Description<\/th><\/tr><\/thead> | ||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Source<\/td> | P\/G<\/td> | Source terminal; connect to ground for low-side switching; three source pins reduce package resistance and inductance; body diode anode<\/td><\/tr> | ||||||||||||||||||||||||
| 2<\/td> | Source<\/td> | P\/G<\/td> | Source terminal (parallel with pins 1, 3)<\/td><\/tr> | ||||||||||||||||||||||||
| 3<\/td> | Source<\/td> | P\/G<\/td> | Source terminal (parallel with pins 1, 2)<\/td><\/tr> | ||||||||||||||||||||||||
| 4<\/td> | Gate<\/td> | I<\/td> | Gate input; VGS(th) 1.4-2.5V; VGS max +\/-20V; 9.8nC gate charge@10V; Rg 3 Ohm typical; drive from MCU GPIO or gate driver<\/td><\/tr> | ||||||||||||||||||||||||
| 5<\/td> | Drain<\/td> | O<\/td> | Drain terminal; 30V max VDS; 24A continuous; connect to load or inductor; primary thermal path<\/td><\/tr> | ||||||||||||||||||||||||
| 6<\/td> | Drain<\/td> | O<\/td> | Drain terminal (parallel with pins 5, 7, 8, exposed pad); solder to copper pour<\/td><\/tr> | ||||||||||||||||||||||||
| 7<\/td> | Drain<\/td> | O<\/td> | Drain terminal (parallel with pins 5, 6, 8)<\/td><\/tr> | ||||||||||||||||||||||||
| 8<\/td> | Drain<\/td> | O<\/td> | Drain terminal (parallel with pins 5, 6, 7)<\/td><\/tr> | ||||||||||||||||||||||||
| Pad<\/td> | Drain\/Thermal<\/td> | O<\/td> | Exposed pad; must solder to PCB copper pour with thermal vias; primary thermal path; RthJC = 5-6C\/W; connects to drain<\/td><\/tr><\/tbody><\/table>","application_scenarios":"
|