\u82f1\u98de\u51cc\u79d1\u6280\uff08\u524d\u8eab\u4e3a International Rectifier\uff09\u7684 IRLML6401TRPBF \u662f\u4e00\u6b3e -12 V P \u6c9f\u9053\u589e\u5f3a\u578b HEXFET \u529f\u7387 MOSFET\uff0c\u91c7\u7528 3 \u5f15\u811a SOT-23 (Micro3) \u5c01\u88c5\u3002\u4e3b\u8981\u89c4\u683c\u5305\u62ec -12 V \u6f0f\u6781-\u6e90\u6781\u7535\u538b\u3001-4.3 A \u8fde\u7eed\u6f0f\u6781\u7535\u6d41\u3001VGS = -4.5 V \u65f6 50 m\u03a9 \u6700\u5927 RDS(on)\u3001-0.55 V \u5178\u578b\u9608\u503c\u7535\u538b\u300110 nC \u603b\u6805\u7535\u8377\u548c 1.3 W \u529f\u7387\u8017\u6563\u3002\u8be5\u5668\u4ef6\u91c7\u7528\u6c9f\u69fd MOSFET \u6280\u672f\uff0c\u5177\u6709\u8d85\u4f4e\u5bfc\u901a\u7535\u963b\u3002\u5de5\u4f5c\u6e29\u5ea6\u8303\u56f4\u4e3a -55\u00b0C \u81f3 +150\u00b0C (TJ)\u3002\u540e\u7f00 TRPBF \u8868\u793a\u5e26\u5377\u5c01\u88c5\u3001\u65e0\u94c5\u3001\u65e0\u5364\u7d20\u3002.<\/p>","protected":false},"excerpt":{"rendered":"
The IRLML6401TRPBF from Infineon Technologies (formerly International Rectifier) is a -12 V P-channel enhancement-mode HEXFET power MOSFET in a 3-pin SOT-23 (Micro3) package. Key specifications include -12 V drain-source voltage, -4.3 A continuous drain current, 50 m\u03a9 maximum RDS(on) at VGS = -4.5 V, -0.55 V typical threshold voltage, 10 nC total gate charge, and […]<\/p>\n","protected":false},"author":2,"featured_media":2264,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,55],"tags":[],"chip_brand":[173],"class_list":["post-2063","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","category-transistors","chip_brand-infineon"],"acf":{"brief_explanation":"P-ch MOSFET, -12V, -4.3A, 50m\u03a9@-4.5V, 10nC Qg, SOT-23, load switch\/DC-DC","date_code":"","package_case":"SOT-23 \/ Micro3 \/ TO-236AB (2.9 x 1.3 x 1.0 mm, 1.9mm pitch)","in_stock":139501,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irlml6401pbf.pdf?fileId=5546d462533600a401535664b7262037","price":"$0.09 (3K+ pcs)","product_introduction":"The IRLML6401 from Infineon (originally International Rectifier) is a P-channel power MOSFET in the industry-standard SOT-23 (Micro3) surface-mount package. The IRLML6401TRPBF is the tape-and-reel, Pb-free, halogen-free version. It is one of the most popular P-channel MOSFETs for low-voltage load switching applications, with extensive multi-source availability.\n\nThe -12 V drain-source rating and -4.3 A continuous current capability make it ideal for Li-ion battery-powered applications where a high-side P-channel switch is needed. The 50 m\u03a9 maximum RDS(on) at VGS = -4.5 V results in only 215 mW of conduction loss at 4.3 A, well within the 1.3 W package rating with modest PCB copper area.\n\nThe low threshold voltage (VGS(th) = -0.55 V typical, -1.0 V maximum) allows the IRLML6401 to be driven directly from 1.8 V logic. At VGS = -2.5 V, RDS(on) increases to approximately 80-90 m\u03a9 but remains usable for moderate current loads, making 1.8 V\/2.5 V GPIO-driven load switches practical.\n\nThe 10 nC total gate charge enables switching frequencies up to several hundred kHz with minimal gate-drive loss, suitable for DC-DC converter applications where a P-channel high-side switch is preferred over a bootstrap-driven N-channel.\n\nThe SOT-23 package provides R\u03b8JA of approximately 75-100\u00b0C\/W depending on PCB layout. With the large drain tab soldered to a copper pour with thermal vias, the device can handle its full rated current in continuous operation.\n\nNote: Infineon has designated the IRLML6401TRPBF-1 as discontinued (replaced by IRLML6401TRPBF). However, the device remains widely available from distributors with over 139K units in stock at Farnell alone. Multiple second-source manufacturers (VBsemi, Kexin, Born) produce compatible versions.","working_principle":"**P-Channel Enhancement MOSFET:** The IRLML6401 is a P-channel enhancement-mode MOSFET. Current flows from source to drain when the gate-source voltage is negative (VGS < VGS(th)). When VGS is 0 V (gate at source potential), no channel forms and the device is off. Applying a negative VGS creates an inversion layer (channel) beneath the gate oxide, allowing holes to flow from source to drain.\n\n**Trench MOSFET Technology:** The IRLML6401 uses Infineon's trench gate technology, where the gate electrode is formed in a vertical trench etched into the silicon. This provides a much larger channel width per unit area compared to planar MOSFETs, resulting in lower RDS(on) for a given die size. The trench structure also reduces the gate charge, improving switching performance.\n\n**Low Threshold Voltage:** The -0.55 V typical threshold is designed for logic-level drive. At VGS = -2.5 V (available from 2.5 V or 3.3 V logic), the channel is fully enhanced with RDS(on) under 90 m\u03a9. At VGS = -4.5 V (available from 5 V logic or Li-ion battery), RDS(on) drops to 50 m\u03a9 maximum.\n\n**Body Diode:** The inherent P-N junction from body to drain creates a parasitic diode that conducts when VSD > 0.6 V. This diode is relevant in half-bridge and synchronous rectifier applications where it conducts during dead time.","pin_description":"
| Pin<\/th> | Name<\/th> | Type<\/th> | Description<\/th><\/tr><\/thead> | ||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Gate<\/td> | I<\/td> | Gate input; controls channel formation; VGS(th) = -0.55V typ; VGS max \u00b18V; 10nC gate charge; ESD protected; drive from MCU GPIO through series resistor<\/td><\/tr> | ||||||||||||||||||||||||||||
| 2<\/td> | Source<\/td> | P<\/td> | Source terminal; typically connected to VCC rail (high-side switch); current flows from source to drain when on; body diode anode<\/td><\/tr> | ||||||||||||||||||||||||||||
| 3<\/td> | Drain<\/td> | O<\/td> | Drain terminal; connects to load; -4.3A continuous; -12V max VDS; body diode cathode; large tab for thermal dissipation on PCB<\/td><\/tr><\/tbody><\/table>","application_scenarios":"
|