The MMBT3904LT3G is a general purpose NPN silicon bipolar junction transistor designed for use in linear and switching applications. Housed in the SOT-23 (TO-236) surface-mount package, it features a collector-emitter voltage of 40 V, collector current of 200 mA, DC current gain of 100 to 300, and a transition frequency of 300 MHz. The device is Pb-free, halogen-free\/BFR-free, and RoHS compliant. Supplied on a 10,000-piece tape and reel.<\/p>","protected":false},"excerpt":{"rendered":"
The MMBT3904LT3G is a general purpose NPN silicon bipolar junction transistor designed for use in linear and switching applications. Housed in the SOT-23 (TO-236) surface-mount package, it features a collector-emitter voltage of 40 V, collector current of 200 mA, DC current gain of 100 to 300, and a transition frequency of 300 MHz. The device […]<\/p>\n","protected":false},"author":2,"featured_media":1755,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[144],"class_list":["post-1746","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"NPN general purpose bipolar junction transistor in SOT-23 package, designed for linear amplification and high-speed switching applications.","date_code":"","package_case":"SOT-23-3 (TO-236, 2.90 x 1.30 x 1.00 mm)","in_stock":196848,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/mmbt3904lt1-d.pdf","price":"$0.029 (1000+ pcs)","product_introduction":"The MMBT3904LT3G is a general purpose NPN silicon bipolar junction transistor from onsemi in SOT-23 package, featuring 40V VCEO, 200mA IC, 300MHz fT, hFE 100-300, and 300mW power dissipation. Pb-free, halogen-free, RoHS compliant. Designed for linear and switching applications.","working_principle":"The MMBT3904LT3G operates as an NPN bipolar junction transistor consisting of a thin P-type base region sandwiched between two N-type semiconductor layers (emitter and collector). When a small forward bias current is applied to the base-emitter junction, it modulates the flow of majority carriers (electrons) from emitter through the base to the collector, producing a much larger collector current. The ratio of collector current to base current defines the DC current gain (hFE), which ranges from 100 to 300 at IC=10mA. The transition frequency of 300 MHz indicates the frequency at which the common-emitter current gain drops to unity. The low collector-emitter saturation voltage (0.2V at 10mA, 0.3V at 50mA) enables efficient switching operation with minimal power loss. Fast switching characteristics (turn-on 35ns, turn-off 50ns) make it suitable for high-speed digital and pulse applications.","pin_description":"
| Pin Number<\/th> | Pin Name<\/th> | Description<\/th><\/tr>\n<\/thead>\n | ||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Base<\/td> | Control terminal; a small input current modulates the collector-emitter conduction<\/td><\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||
| 2<\/td> | Emitter<\/td> | Current source terminal; electrons are emitted from this region into the base<\/td><\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||
| 3<\/td> | Collector<\/td> | Current sink terminal; collects electrons that pass through the base region from the emitter<\/td><\/tr>\n<\/tbody>\n<\/table>","application_scenarios":"
|