{"id":10243,"date":"2026-07-09T08:33:19","date_gmt":"2026-07-09T08:33:19","guid":{"rendered":"https:\/\/materialparts.com\/ixtt10n100d2\/"},"modified":"2026-07-09T08:35:13","modified_gmt":"2026-07-09T08:35:13","slug":"ixtt10n100d2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/ixtt10n100d2\/","title":{"rendered":"IXTT10N100D2"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The IXTT10N100D2 is a Ixys product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u7c7b\u578b<\/td>\nN-Channel Depletion-Mode Power MOSFET<\/td>\n<\/tr>\n
VDS<\/td>\n1000 V<\/td>\n<\/tr>\n
VGS(max)<\/td>\n+\/- 20V<\/td>\n<\/tr>\n
RDS(on) Max @ 10V<\/td>\n1.5 Ohm @ 5A<\/td>\n<\/tr>\n
ID @ 25C<\/td>\n10A (Tc)<\/td>\n<\/tr>\n
VGS(off) Max<\/td>\n-4.5 V<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n200 nC (Typ) @ 5V<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n5320 pF<\/td>\n<\/tr>\n
Reverse Transfer Cap (Crss)<\/td>\n70 pF<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n695 W (Tc)<\/td>\n<\/tr>\n
RthJC<\/td>\n0.18 K\/W<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55 C to +150 C (TJ)<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nTO-268AA (D3PAK, SMD)<\/td>\n<\/tr>\n
\u5236\u9020\u5546<\/td>\nIXYS (now Littelfuse)<\/td>\n<\/tr>\n
\u90e8\u4ef6\u72b6\u6001<\/td>\n\u6d3b\u8dc3<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n

N-Channel depletion-mode (normally-on) MOSFET; 1000V drain-source voltage; 10A continuous drain current at 25C; 1.5 Ohm max RDS(on) at VGS=10V; Normally-on operation (conducts at VGS=0V); Linear mode tolerant; Low RDS(on) for depletion device; Useable body diode; 695W power dissipation (Tc); Low RthJC of 0.18 K\/W; UL 94 V-0 flammability qualified; TO-268AA surface-mount package; Active product status from Littelfuse<\/p>\n

\u5e94\u7528<\/h2>\n

Audio amplifiers (Class A); Start-up circuits for power supplies; Current regulators and current sources; Active loads and dummy loads; Protection circuits and crowbars; Ramp generators; Normally-on switching applications; High-voltage linear regulators; Solid-state relays (normally-closed); Telecom line interface<\/p>","protected":false},"excerpt":{"rendered":"

Product Overview The IXTT10N100D2 is a Ixys product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications. Key Specifications Type N-Channel Depletion-Mode Power MOSFET VDS 1000 V VGS(max) +\/- 20V RDS(on) Max @ 10V 1.5 Ohm @ 5A ID @ 25C 10A (Tc) VGS(off) Max […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[1497],"chip_brand":[253],"class_list":["post-10243","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-ixtt10n100d2","chip_brand-ixys"],"acf":{"brief_explanation":"N-Channel depletion-mode MOSFET, 1000V, 10A, 1.5Ohm, normally-on, TO-268AA, 695W","date_code":"","package_case":"TO-268AA \/ D3PAK (15.75 x 13.08 x 4.83 mm)","in_stock":14959,"datasheet":"https:\/\/www.littelfuse.com\/~\/media\/electronics\/datasheets\/discrete_mosfets\/littelfuse_discrete_mosfets_ixt_10n100_d_datasheet.pdf.pdf","price":"$8.50 @ 1ku","product_introduction":"The IXTT10N100D2 from IXYS (now Littelfuse) is an N-Channel depletion-mode (normally-on) power MOSFET rated at 1000V drain-source voltage with 10A continuous drain current, housed in a TO-268AA (D3PAK) surface-mount package. Unlike the more common enhancement-mode MOSFETs that are normally-off, depletion-mode devices conduct current at VGS=0V and require a negative gate-source voltage to turn off. This normally-on characteristic makes the IXTT10N100D2 ideal for applications where the circuit must remain active without gate drive, such as start-up circuits, current regulators, active loads, and normally-closed solid-state relays. The device features a maximum RDS(on) of 1.5 Ohm at VGS=10V, 200 nC typical gate charge, and an exceptionally low thermal resistance of 0.18 K\/W (junction-to-case) enabling 695W power dissipation with adequate heatsinking. The D2 series represents the second-generation depletion-mode technology from IXYS, offering improved performance over the original D series. The TO-268AA package provides a large mounting tab for direct heatsink attachment in surface-mount applications.","working_principle":"The IXTT10N100D2 operates as an N-Channel depletion-mode MOSFET, which differs fundamentally from the more common enhancement-mode type. In a depletion-mode device, a conductive channel exists between drain and source at VGS=0V due to the implanted channel region in the silicon. The device is normally-on, meaning current flows from drain to source with zero gate voltage applied. To turn the device off, a negative gate-source voltage (VGS) must be applied that depletes the channel of charge carriers. The gate-source cutoff voltage (VGS(off)) is specified as a maximum of -4.5V, meaning the device turns off when VGS is more negative than this threshold. In linear operation, the drain current is controlled by the gate voltage between VGS(off) and 0V, making depletion-mode MOSFETs natural current sources or active loads. The IXYS planar MOSFET structure provides a linear mode tolerant design, meaning the device can safely operate in the saturation region (simultaneous high VDS and ID) without the thermal runaway issues that plague some enhancement-mode MOSFETs in linear mode. The internal body diode between source and drain provides reverse conduction capability, and the device can block up to 1000V in the off state.","pin_description":"
Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
1<\/td>Gate<\/td>Input<\/td>Gate terminal; controls channel conduction. Negative voltage (to -4.5V) turns device OFF; 0V = ON.<\/td><\/tr>
2<\/td>Drain<\/td>Output<\/td>Drain terminal; high-voltage power connection (tab\/mounting base)<\/td><\/tr>
3<\/td>Source<\/td>Power<\/td>Source terminal; reference for gate drive voltage<\/td><\/tr>
Tab<\/td>Drain<\/td>Thermal<\/td>Mounting tab internally connected to drain; for heatsink attachment. Isolate from ground for high-side operation.<\/td><\/tr><\/table>","application_scenarios":"
  • Start-Up Circuits:<\/strong> Provides initial bias current in offline power supplies where the normally-on characteristic delivers start-up current before the control IC is active, then turns off when VGS goes negative.<\/li>
  • Current Regulators:<\/strong> Acts as a constant current source in linear regulator circuits where the depletion-mode characteristic provides inherent current limiting without gate drive circuitry.<\/li>
  • Audio Amplifiers:<\/strong> Serves as the active load in Class A audio amplifier stages where the depletion-mode MOSFET provides a high-impedance AC load with DC bias current, delivering superior linearity.<\/li>
  • Protection Circuits:<\/strong> Normally-closed solid-state switch in safety circuits where the default state must be conducting, requiring active gate drive to interrupt the circuit during fault conditions.<\/li><\/ul>","alternative_models":"
    Manufacturer<\/th>Part Number<\/th>Package<\/th>VDS<\/th>Notes<\/th><\/tr>
    IXYS\/Littelfuse<\/td>IXTH10N100D2<\/td>TO-247<\/td>1000V<\/td>Through-hole version, same die<\/td><\/tr>
    IXYS\/Littelfuse<\/td>IXTT10N100D<\/td>TO-268<\/td>1000V<\/td>First generation (D series), 1.4 Ohm<\/td><\/tr>
    IXYS\/Littelfuse<\/td>IXTA3N100D2<\/td>TO-263<\/td>1000V<\/td>Lower current (3A), D2PAK<\/td><\/tr>
    Infineon<\/td>BSP316P<\/td>SOT-223<\/td>60V<\/td>Low-voltage depletion-mode alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/10243","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=10243"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/10243\/revisions"}],"predecessor-version":[{"id":10253,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/10243\/revisions\/10253"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=10243"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=10243"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=10243"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=10243"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}