{"id":10237,"date":"2026-07-09T08:33:03","date_gmt":"2026-07-09T08:33:03","guid":{"rendered":"https:\/\/materialparts.com\/is42s16400j-7tli-tr\/"},"modified":"2026-07-09T08:35:07","modified_gmt":"2026-07-09T08:35:07","slug":"is42s16400j-7tli-tr","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/is42s16400j-7tli-tr\/","title":{"rendered":"IS42S16400J-7TLI-TR"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The IS42S16400J-7TLI-TR is a ISSI product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Memory Type<\/td>\nSDR SDRAM<\/td>\n<\/tr>\n
Density<\/td>\n64Mbit (8MB)<\/td>\n<\/tr>\n
Organization<\/td>\n4M x 16<\/td>\n<\/tr>\n
Internal Banks<\/td>\n4<\/td>\n<\/tr>\n
Interface<\/td>\nLVTTL (Parallel)<\/td>\n<\/tr>\n
Max Clock Frequency<\/td>\n143 MHz<\/td>\n<\/tr>\n
Access Time<\/td>\n5.4 ns<\/td>\n<\/tr>\n
\u7535\u6e90\u7535\u538b<\/td>\n3.0V to 3.6V (3.3V Typ)<\/td>\n<\/tr>\n
Operating Current<\/td>\n90 mA (Max)<\/td>\n<\/tr>\n
Programmable CAS Latency<\/td>\n2, 3 clocks<\/td>\n<\/tr>\n
Programmable Burst Length<\/td>\n1, 2, 4, 8, Full Page<\/td>\n<\/tr>\n
Burst Sequence<\/td>\nSequential \/ Interleave<\/td>\n<\/tr>\n
Refresh<\/td>\n8K cycles \/ 64ms (Com\/Ind\/A1), 8K\/32ms (A2)<\/td>\n<\/tr>\n
Auto Refresh \/ Self Refresh<\/td>\nYes \/ Yes<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-40 C to +85 C (Industrial)<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\n54-TSOP-II (10.16mm width)<\/td>\n<\/tr>\n
Process Technology<\/td>\n72nm<\/td>\n<\/tr>\n
\u90e8\u4ef6\u72b6\u6001<\/td>\nObsolete<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n

64Mbit SDR SDRAM organized as 4M x 16; 143MHz maximum clock frequency; 4 internal banks for concurrent operation; Single 3.3V power supply; LVTTL-compatible inputs and outputs; Programmable CAS latency (2, 3 clocks); Programmable burst length (1, 2, 4, 8, full page); Programmable burst sequence (sequential\/interleave); Auto precharge; Auto refresh (CBR); Self refresh mode; All signals referenced to positive clock edge; Tape and reel packaging<\/p>\n

\u5e94\u7528<\/h2>\n

Embedded systems main memory; Industrial control and automation; Networking equipment buffer memory; Consumer electronics; Set-top boxes; Automotive infotainment (legacy designs); Data buffering and FIFO applications; Legacy system maintenance and replacement<\/p>","protected":false},"excerpt":{"rendered":"

Product Overview The IS42S16400J-7TLI-TR is a ISSI product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications. Key Specifications Memory Type SDR SDRAM Density 64Mbit (8MB) Organization 4M x 16 Internal Banks 4 Interface LVTTL (Parallel) Max Clock Frequency 143 MHz Access Time 5.4 ns […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[37,13,4],"tags":[1491],"chip_brand":[210],"class_list":["post-10237","post","type-post","status-publish","format-standard","hentry","category-dynamic-random-access-memory-dram","category-integrated-circuits-ics","category-memory-chips","tag-is42s16400j-7tli-tr","chip_brand-issi"],"acf":{"brief_explanation":"64Mbit SDR SDRAM, 4Mx16, 143MHz, 3.3V, LVTTL, 54-TSOP-II, Industrial, TR, Obsolete","date_code":"","package_case":"54-TSOP-II (22.22 x 10.16 x 1.0 mm)","in_stock":3948,"datasheet":"https:\/\/www.issi.com\/WW\/pdf\/42-45S16400J.pdf","price":"$2.50 @ 1ku","product_introduction":"The IS42S16400J-7TLI-TR from ISSI (Integrated Silicon Solution, Inc.) is a 64Mbit SDR SDRAM organized as 4M x 16 bits, fabricated on 72nm process technology. Operating at a maximum clock frequency of 143MHz with 5.4ns access time, this device provides reliable synchronous DRAM performance for embedded and industrial applications. The quad-bank architecture enables concurrent bank operation, hiding row access and precharge times for seamless high-speed random access. The device supports programmable CAS latency of 2 or 3 clocks and programmable burst lengths of 1, 2, 4, 8, or full page, providing flexibility for various memory controller designs. Auto precharge and auto refresh (CBR) modes simplify memory controller design, while self refresh mode maintains data integrity during low-power standby. The -7TLI-TR designation indicates 143MHz speed grade (7ns tCK), industrial temperature range (-40C to +85C), TSOP-II package, and tape and reel packaging. Note: This device is classified as Obsolete; new designs should consider the IS42S16400N replacement or alternative SDRAM devices from ISSI.","working_principle":"The IS42S16400J-7TLI-TR operates as a synchronous dynamic random-access memory where all signals are registered on the positive edge of the system clock (CLK). The memory array is organized as four independent banks, each containing 1M words of 16 bits, allowing one bank to be accessed while another is being precharged. Memory access begins with an ACTIVE command that latches the bank address (BA0-BA1) and row address (A0-A11) to open a specific row in the selected bank. A subsequent READ or WRITE command latches the column address (A0-A9 with A10 for auto precharge) to access the target data within the active row. Data is transferred in burst mode starting at the selected column and continuing for the programmed burst length. The SDRAM requires periodic refresh to maintain data integrity, with 8192 refresh cycles every 64ms for commercial and industrial temperature grades. Auto refresh (CBR) performs this automatically, while self refresh mode allows the device to generate its own internal refresh cycles without external clock, enabling very low standby power consumption. The programmable mode register sets CAS latency, burst type, and burst length at initialization.","pin_description":"
Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
A0-A11<\/td>Address Inputs<\/td>Input<\/td>Multiplexed row\/column address; row during ACTIVE, column during READ\/WRITE<\/td><\/tr>
BA0, BA1<\/td>Bank Select<\/td>Input<\/td>Selects one of 4 internal banks for ACTIVE, READ, WRITE, or PRECHARGE<\/td><\/tr>
DQ0-DQ15<\/td>Data I\/O<\/td>I\/O<\/td>16-bit bidirectional data bus<\/td><\/tr>
CLK<\/td>System Clock<\/td>Input<\/td>Master clock; all inputs sampled on rising edge<\/td><\/tr>
CKE<\/td>Clock Enable<\/td>Input<\/td>Enables\/disables CLK; controls power-down and self refresh entry<\/td><\/tr>
CS<\/td>Chip Select<\/td>Input<\/td>Active-low chip select; enables command decoding<\/td><\/tr>
RAS<\/td>Row Address Strobe<\/td>Input<\/td>Command input (with CAS, WE, CS)<\/td><\/tr>
CAS<\/td>Column Address Strobe<\/td>Input<\/td>Command input (with RAS, WE, CS)<\/td><\/tr>
WE<\/td>Write Enable<\/td>Input<\/td>Command input (with RAS, CAS, CS)<\/td><\/tr>
DQML, DQMH<\/td>Data Mask<\/td>Input<\/td>Lower\/Upper byte data mask; masks input data during writes, enables\/disables outputs during reads<\/td><\/tr><\/table>","application_scenarios":"
  • Embedded System Main Memory:<\/strong> Provides 8MB of SDR SDRAM for microcontroller and FPGA-based embedded systems requiring moderate memory bandwidth at 143MHz.<\/li>
  • Industrial Control:<\/strong> Serves as buffer and working memory in PLCs and industrial controllers with industrial temperature grade (-40C to +85C).<\/li>
  • Legacy System Maintenance:<\/strong> Drop-in replacement for obsolete SDRAM in existing designs requiring 64Mbit 4Mx16 SDR devices.<\/li>
  • Networking Buffer:<\/strong> Packet buffering in network equipment with burst-oriented access patterns and quad-bank interleaving.<\/li><\/ul>","alternative_models":"
    Manufacturer<\/th>Part Number<\/th>Package<\/th>Density<\/th>Notes<\/th><\/tr>
    ISSI<\/td>IS42S16400N-7TLI<\/td>54-TSOP-II<\/td>64Mbit<\/td>Recommended replacement, newer generation<\/td><\/tr>
    Alliance Memory<\/td>AS4C4M16SA-5TCN<\/td>54-TSOP-II<\/td>64Mbit<\/td>Pin-compatible alternative<\/td><\/tr>
    ISSI<\/td>IS42S16160J-7TLI<\/td>54-TSOP-II<\/td>256Mbit<\/td>Higher density, same voltage\/interface<\/td><\/tr>
    Winbond<\/td>W9812G6KH-6<\/td>54-TSOP-II<\/td>128Mbit<\/td>Double density, backward compatible<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/10237","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=10237"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/10237\/revisions"}],"predecessor-version":[{"id":10247,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/10237\/revisions\/10247"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=10237"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=10237"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=10237"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=10237"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}