{"id":9962,"date":"2026-07-08T07:37:19","date_gmt":"2026-07-08T07:37:19","guid":{"rendered":"https:\/\/materialparts.com\/si2333ds-t1-ge3\/"},"modified":"2026-07-08T07:37:19","modified_gmt":"2026-07-08T07:37:19","slug":"si2333ds-t1-ge3","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/si2333ds-t1-ge3\/","title":{"rendered":"SI2333DS-T1-GE3"},"content":{"rendered":"

Productos<\/h2>\n

The Vishay SI2333DS-T1-GE3 is a -30V P-channel MOSFET in SOT-23 (TO-236) package. With 33mOhm max RDS(ON) at -4.5V and -3.7A drain current, it provides high-efficiency load switching, battery disconnect, and power routing in portable devices. The TrenchFET technology ensures ultra-low on-resistance in a tiny footprint.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
Tipo<\/td>\nP-Channel MOSFET<\/td>\n<\/tr>\n
VDS<\/td>\n-30V<\/td>\n<\/tr>\n
VGS<\/td>\n\u00b120V<\/td>\n<\/tr>\n
ID (Max)<\/td>\n-3.7A<\/td>\n<\/tr>\n
RDS(ON)<\/td>\n33mOhm @ VGS=-4.5V<\/td>\n<\/tr>\n
RDS(ON)<\/td>\n55mOhm @ VGS=-2.5V<\/td>\n<\/tr>\n
Qg (Total)<\/td>\n12nC @ -4.5V<\/td>\n<\/tr>\n
Threshold Voltage<\/td>\n-0.85V (typical)<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n1.0W<\/td>\n<\/tr>\n
Paquete<\/td>\nSOT-23-3 (TO-236AB)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to +150\u00b0C<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Ultra-low 33mOhm RDS(ON) at -4.5V<\/li>\n
  • TrenchFET technology<\/li>\n
  • -3.7A continuous drain current<\/li>\n
  • -30V rated for 12V\/24V systems<\/li>\n
  • SOT-23 tiny footprint<\/li>\n
  • Logic-level gate drive compatible<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Battery disconnect\/load switch<\/li>\n
    • Power routing in dual-battery systems<\/li>\n
    • DC-DC converter high-side switch<\/li>\n
    • Motor driver H-bridge (P-side)<\/li>\n
    • Portable device power management<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The Vishay SI2333DS-T1-GE3 is a -30V P-channel MOSFET in SOT-23 (TO-236) package. With 33mOhm max RDS(ON) at -4.5V and -3.7A drain current, it provides high-efficiency load switching, battery disconnect, and power routing in portable devices. The TrenchFET technology ensures ultra-low on-resistance in a tiny footprint. Key Specifications Type P-Channel MOSFET VDS -30V VGS […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[1259],"chip_brand":[136],"class_list":["post-9962","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-si2333ds-t1-ge3","chip_brand-vishay"],"acf":{"brief_explanation":"P-ch MOSFET, -30V, -3.7A, 33mOhm, SOT-23, Vishay TrenchFET load switch","date_code":"","package_case":"SOT-23-3 (TO-236AB, 2.9 x 1.3 x 1.0mm)","in_stock":9929,"datasheet":"https:\/\/www.vishay.com\/docs\/63628\/si2333ds.pdf","price":"$0.15 @ 1ku","product_introduction":"The Vishay SI2333DS-T1-GE3 is a -30V P-channel TrenchFET MOSFET in SOT-23 package with ultra-low 33mOhm RDS(ON) at -4.5V gate drive. It is one of the most popular P-channel load switch MOSFETs for battery-powered devices, providing high-side switching for power routing, battery disconnect, and load management in portable electronics.","working_principle":"The SI2333DS-T1-GE3 uses Vishay's TrenchFET technology with a trench-gate structure that increases channel density and reduces cell size compared to planar MOSFETs. This achieves 33mOhm RDS(ON) in the tiny SOT-23 package. As a P-channel device, it is used as a high-side switch: pulling the gate below the source turns the MOSFET on, connecting the load to the supply. The logic-level threshold (-0.85V typical) allows direct drive from 2.5V or 3.3V logic.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>G<\/td>Input<\/td>Gate<\/td><\/tr>
      2<\/td>S<\/td>Power<\/td>Source<\/td><\/tr>
      3<\/td>D<\/td>Output<\/td>Drain<\/td><\/tr><\/table>","application_scenarios":"
      • Lithium battery disconnect switch in portable devices<\/li>
      • Dual-battery power routing OR-ing<\/li>
      • DC-DC converter high-side P-channel switch<\/li>
      • Motor H-bridge P-side drive<\/li>
      • USB power delivery load switching<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Vishay<\/td>SI2337DS-T1-GE3<\/td>SOT-23<\/td>-20V, lower RDS(ON)<\/td><\/tr>
        Infineon<\/td>BSD215P<\/td>SOT-23<\/td>-20V P-ch equivalent<\/td><\/tr>
        Diodes Inc<\/td>DMP3099L-7<\/td>SOT-23<\/td>-30V P-ch equivalent<\/td><\/tr>
        onsemi<\/td>NTR4101PT1G<\/td>SOT-23<\/td>-20V P-ch load switch<\/td><\/tr>
        Vishay<\/td>SI2343DS-T1-GE3<\/td>SOT-23<\/td>-12V, even lower RDS(ON)<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9962","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=9962"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9962\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=9962"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=9962"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=9962"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=9962"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}