{"id":9647,"date":"2026-07-05T08:29:54","date_gmt":"2026-07-05T08:29:54","guid":{"rendered":"https:\/\/materialparts.com\/c2m0160120d\/"},"modified":"2026-07-05T08:29:54","modified_gmt":"2026-07-05T08:29:54","slug":"c2m0160120d","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/c2m0160120d\/","title":{"rendered":"C2M0160120D"},"content":{"rendered":"

Productos<\/h2>\n

The C2M0160120D is a 1200V, 16A N-channel SiC (Silicon Carbide) power MOSFET from Wolfspeed (formerly Cree), part of the C2M family of SiC MOSFETs. This device features an extremely low RDS(on) of 160m\u03a9 at 25\u00b0C (typical), high-frequency switching capability, and a 4-TO-247 (TO-247-4) package with a separate Kelvin source pin for optimized gate drive. The 1200V rating makes it ideal for high-voltage power conversion applications requiring high efficiency and power density.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
VDS (Drain-Source Voltage)<\/td>\n1200 V<\/td>\n<\/tr>\n
ID (Continuous Drain Current)<\/td>\n16 A @ 25\u00b0C<\/td>\n<\/tr>\n
RDS(on) (Typ)<\/td>\n160 m\u03a9 @ VGS=20V, 25\u00b0C<\/td>\n<\/tr>\n
RDS(on) (Max)<\/td>\n200 m\u03a9 @ VGS=20V, 25\u00b0C<\/td>\n<\/tr>\n
VGS(th)<\/td>\n2.7V (Typ)<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n46 nC (Typ)<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n932 pF (Typ)<\/td>\n<\/tr>\n
Switching Energy (Eon+Eoff)<\/td>\n230 \u03bcJ (Typ) @ 800V, 16A<\/td>\n<\/tr>\n
Paquete<\/td>\nTO-247-4 (Kelvin Source)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n
Die Technology<\/td>\n4H-SiC MOSFET<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • 1200V blocking voltage with 160m\u03a9 RDS(on) for high efficiency<\/li>\n
  • 4-TO-247 package with Kelvin source pin eliminates source inductance from gate loop<\/li>\n
  • Zero reverse recovery charge (Qrr \u2248 0) for half-bridge applications<\/li>\n
  • Temperature-independent switching characteristics for predictable behavior<\/li>\n
  • High-frequency operation capability enabling smaller passive components<\/li>\n
  • 15V to 20V recommended gate drive voltage for optimal RDS(on)<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Solar string inverters and microinverters<\/li>\n
    • EV charging stations and on-board chargers<\/li>\n
    • Industrial motor drives and servo amplifiers<\/li>\n
    • Solid-state circuit breakers and motor soft starters<\/li>\n
    • High-voltage DC-DC converters and SMPS<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The C2M0160120D is a 1200V, 16A N-channel SiC (Silicon Carbide) power MOSFET from Wolfspeed (formerly Cree), part of the C2M family of SiC MOSFETs. This device features an extremely low RDS(on) of 160m\u03a9 at 25\u00b0C (typical), high-frequency switching capability, and a 4-TO-247 (TO-247-4) package with a separate Kelvin source pin for optimized gate […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,20],"tags":[917],"chip_brand":[216],"class_list":["post-9647","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-interface-ics","tag-c2m0160120d","chip_brand-wolfspeed"],"acf":{"brief_explanation":"1200V 16A SiC MOSFET, 160m\u03a9 RDS(on), TO-247-4 Kelvin source, zero Qrr, Wolfspeed","date_code":"","package_case":"TO-247-4 (4-pin, 21.0 x 15.9 x 5.3 mm)","in_stock":3780,"datasheet":"https:\/\/www.wolfspeed.com\/c2m0160120d","price":"$18.50 @ 1ku","product_introduction":"The Wolfspeed C2M0160120D is a 1200V, 16A N-channel silicon carbide (SiC) power MOSFET fabricated on Wolfspeed's 4H-SiC platform. With a typical RDS(on) of just 160m\u03a9 at VGS=20V, this device delivers significantly lower conduction and switching losses compared to silicon IGBTs or MOSFETs at equivalent voltage ratings. The TO-247-4 package features a dedicated Kelvin source pin that bypasses the source inductance in the gate drive loop, enabling faster switching speeds and reduced ringing. SiC MOSFETs exhibit nearly zero reverse recovery charge (Qrr), eliminating the large reverse recovery losses that plague silicon body diodes in bridge topologies. The device supports junction temperatures up to +175\u00b0C and switching frequencies well above 100kHz, enabling dramatic size reductions in magnetic and capacitive components.","working_principle":"The C2M0160120D is a vertical N-channel MOSFET fabricated on a 4H-SiC (Silicon Carbide) substrate. SiC's wide bandgap (3.26eV vs 1.12eV for silicon) enables the drift region to be 10x thinner and more heavily doped while maintaining the same blocking voltage, resulting in dramatically lower specific on-resistance. When VGS exceeds the threshold (2.7V typical), an inversion layer forms at the semiconductor\/oxide interface, creating a conductive channel between source and drain. The low RDS(on) of 160m\u03a9 is achieved through the high electron mobility in the SiC channel and the thin, highly doped drift layer. The Kelvin source pin (pin 4) provides a separate return path for gate drive current, eliminating the voltage drop across the package source bond wire inductance (Ls \u00d7 di\/dt) that would otherwise slow down switching. The body diode of a SiC MOSFET has virtually zero reverse recovery charge because minority carrier injection is negligible in wide-bandgap materials.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Source<\/td>Power<\/td>Main source terminal (load current path)<\/td><\/tr>
      2<\/td>Drain<\/td>Power<\/td>Drain terminal (high voltage)<\/td><\/tr>
      3<\/td>Gate<\/td>Input<\/td>Gate drive input (15-20V recommended)<\/td><\/tr>
      4<\/td>Kelvin Source<\/td>Input<\/td>Gate drive return path (bypasses source inductance)<\/td><\/tr><\/table>","application_scenarios":"
      • Solar string inverter boost stage and inverter bridge<\/li>
      • EV on-board charger PFC and DC-DC stages<\/li>
      • Industrial servo drive inverter output stage<\/li>
      • High-voltage DC-DC converter for telecom rectifiers<\/li>
      • Solid-state circuit breaker for DC distribution<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Wolfspeed<\/td>C2M0020120D<\/td>TO-247-3<\/td>1200V, 90A, lower RDS(on)<\/td><\/tr>
        Infineon<\/td>IMZ120R030M1H<\/td>PG-TO247-4<\/td>1200V, CoolSiC MOSFET<\/td><\/tr>
        STMicroelectronics<\/td>SCTW40N120G2V-4<\/td>HI-P247-4<\/td>1200V SiC MOSFET<\/td><\/tr>
        onsemi<\/td>NTH4L030N120SC1<\/td>TO-247-4<\/td>1200V, 30m\u03a9 SiC MOSFET<\/td><\/tr>
        Rohm<\/td>SCT3080KR<\/td>TO-247N<\/td>1200V, 80m\u03a9 SiC MOSFET<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=9647"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9647\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=9647"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=9647"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=9647"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=9647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}