{"id":9619,"date":"2026-07-04T10:33:45","date_gmt":"2026-07-04T10:33:45","guid":{"rendered":"https:\/\/materialparts.com\/fdc6312p\/"},"modified":"2026-07-04T10:33:45","modified_gmt":"2026-07-04T10:33:45","slug":"fdc6312p","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/fdc6312p\/","title":{"rendered":"FDC6312P"},"content":{"rendered":"

Productos<\/h2>\n

The FDC6312P from onsemi (formerly Fairchild Semiconductor) is a P-channel enhancement-mode power MOSFET in a compact SOT-23-6 (SuperSOT-6) package. Designed for load switching and power management applications, it features a -20 V drain-source rating, -1.7 A continuous drain current, and low on-resistance, making it suitable for battery-powered portable devices where space and power efficiency are critical.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n
Channel Type<\/td>\nP-Channel Enhancement<\/td>\n<\/tr>\n
VDS (Drain-Source Voltage)<\/td>\n-20 V<\/td>\n<\/tr>\n
ID (Continuous Drain Current)<\/td>\n-1.7 A<\/td>\n<\/tr>\n
RDS(ON) Max<\/td>\n75 m\u03a9 @ VGS = -4.5 V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n-0.6 V to -1.5 V<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n6.5 nC typical<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n1.25 W<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to 150\u00b0C (TJ)<\/td>\n<\/tr>\n
Paquete<\/td>\nSOT-23-6 (SuperSOT-6)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Very low 75 m\u03a9 on-resistance at VGS = -4.5 V for efficient switching<\/li>\n
  • Compact SuperSOT-6 package with improved thermal performance vs. SOT-23-3<\/li>\n
  • Low threshold voltage (-0.6 V to -1.5 V) for logic-level drive compatibility<\/li>\n
  • Low gate charge (6.5 nC) for fast switching with minimal drive power<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Battery load switching in portable electronics<\/li>\n
    • Li-ion battery pack protection circuits<\/li>\n
    • Power management in handheld devices<\/li>\n
    • DC-DC converter high-side switch<\/li>\n
    • Notebook and tablet power path selection<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The FDC6312P from onsemi (formerly Fairchild Semiconductor) is a P-channel enhancement-mode power MOSFET in a compact SOT-23-6 (SuperSOT-6) package. Designed for load switching and power management applications, it features a -20 V drain-source rating, -1.7 A continuous drain current, and low on-resistance, making it suitable for battery-powered portable devices where space and power […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[871],"chip_brand":[182],"class_list":["post-9619","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-fdc6312p","chip_brand-onsemi"],"acf":{"brief_explanation":"P-channel MOSFET, -20V, -1.7A, 75m\u03a9 @ -4.5V, SuperSOT-6, low threshold for load switching","date_code":"","package_case":"SOT-23-6 (SuperSOT-6)","in_stock":2997,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/fdc6312p-d.pdf","price":"$0.18 @ 3000+","product_introduction":"The FDC6312P from onsemi is a P-channel enhancement-mode power MOSFET housed in a SuperSOT-6 (SOT-23-6) package. It features a -20 V drain-source voltage rating and a continuous drain current of -1.7 A, with a very low on-resistance of 75 m\u03a9 maximum at VGS = -4.5 V. The low threshold voltage range (-0.6 V to -1.5 V) makes it compatible with logic-level drive signals from MCUs and power management ICs. The SuperSOT-6 package provides improved thermal performance and higher power dissipation (1.25 W) compared to standard SOT-23-3 packages, making it ideal for load switching and battery protection in portable electronics.","working_principle":"The FDC6312P operates as a voltage-controlled P-channel switch: (1) Enhancement Mode \u2014 at VGS = 0 V (gate at source potential), the MOSFET is off with no channel formed; (2) Turn-On \u2014 applying a negative gate-to-source voltage below the threshold (-0.6 V to -1.5 V) creates a P-type inversion channel, allowing hole current to flow from source to drain; (3) On-State \u2014 at VGS = -4.5 V, the channel is fully enhanced with RDS(ON) of 75 m\u03a9 max, providing efficient conduction; (4) SuperSOT-6 Advantage \u2014 the 6-pin package dedicates separate pins for source, drain, and gate connections (two source pins for lower parasitic inductance and better thermal dissipation), enabling 1.25 W power handling in a compact footprint.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>Source<\/td>Source terminal (connect to supply rail)<\/td><\/tr>
      2<\/td>Gate<\/td>Gate terminal (drive negative relative to source to turn on)<\/td><\/tr>
      3<\/td>Source<\/td>Source terminal (parallel with Pin 1 for lower inductance)<\/td><\/tr>
      4<\/td>Drain<\/td>Drain terminal (connect to load)<\/td><\/tr>
      5<\/td>Drain<\/td>Drain terminal (parallel with Pin 4)<\/td><\/tr>
      6<\/td>Drain<\/td>Drain terminal (parallel with Pin 4)<\/td><\/tr><\/table>","application_scenarios":"
      • Smartphone battery load switch controlled by PMIC with 1.7 A current capability and 75 m\u03a9 RDS(ON)<\/li>
      • Li-ion battery pack overcurrent protection MOSFET with low threshold for MCU GPIO drive<\/li>
      • Notebook PC USB port power switching with SuperSOT-6 thermal performance for 1.25 W dissipation<\/li>
      • Tablet device power path selection between battery and adapter using back-to-back P-MOSFET configuration<\/li>
      • Wearable device battery management with logic-level gate drive from a 1.8 V power management IC<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        FDC6312L<\/td>onsemi<\/td>N-channel companion device in same package<\/td><\/tr>
        FDN360P<\/td>onsemi<\/td>-20 V, -2.2 A, 42 m\u03a9 in SuperSOT-6<\/td><\/tr>
        SI2301DS<\/td>Vishay<\/td>-20 V, -2.2 A, SOT-23-3<\/td><\/tr>
        AO3401A<\/td>Alpha & Omega<\/td>-30 V, -4 A, SOT-23-3<\/td><\/tr>
        IRLML6402<\/td>Infineon<\/td>-20 V, -3.7 A, very low RDS(ON), SOT-23-3<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9619","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=9619"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9619\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=9619"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=9619"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=9619"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=9619"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}