{"id":9607,"date":"2026-07-04T10:33:21","date_gmt":"2026-07-04T10:33:21","guid":{"rendered":"https:\/\/materialparts.com\/ntr4502pt1g\/"},"modified":"2026-07-04T10:33:21","modified_gmt":"2026-07-04T10:33:21","slug":"ntr4502pt1g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/ntr4502pt1g\/","title":{"rendered":"NTR4502PT1G"},"content":{"rendered":"

Productos<\/h2>\n

The NTR4502PT1G from onsemi is a P-channel enhancement-mode MOSFET in a compact SOT-23-3 surface-mount package. With a -30 V drain-source voltage rating, -1.9 A continuous drain current, and 200 m\u03a9 maximum on-resistance at VGS = -10 V, it is designed for load switching, battery protection, and power management in portable and space-constrained applications.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
Channel Type<\/td>\nP-Channel Enhancement<\/td>\n<\/tr>\n
VDS (Drain-Source Voltage)<\/td>\n-30 V<\/td>\n<\/tr>\n
ID (Continuous Drain Current)<\/td>\n-1.9 A (Ta), -1.13 A (Ta, surface mount)<\/td>\n<\/tr>\n
RDS(ON) Max<\/td>\n200 m\u03a9 @ VGS = -10 V, ID = -1.95 A<\/td>\n<\/tr>\n
VGS(th) Max<\/td>\n-3 V @ ID = -250 \u00b5A<\/td>\n<\/tr>\n
Gate Charge (Qg) Max<\/td>\n10 nC @ VGS = -10 V<\/td>\n<\/tr>\n
Input Capacitance (Ciss) Max<\/td>\n200 pF @ VDS = -15 V<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n400 mW (Tj)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to 150\u00b0C (TJ)<\/td>\n<\/tr>\n
Paquete<\/td>\nSOT-23-3 (TO-236)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Low 200 m\u03a9 on-resistance for efficient power switching<\/li>\n
  • Compact SOT-23-3 package for space-constrained designs<\/li>\n
  • 30 V drain-source voltage rating suitable for single-cell Li-ion battery applications<\/li>\n
  • Low gate charge (10 nC) for fast switching with minimal drive loss<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Battery charging\/discharging load switches in portable devices<\/li>\n
    • Power management and load switching in handheld electronics<\/li>\n
    • Li-ion battery protection circuits<\/li>\n
    • DC-DC converter synchronous rectification<\/li>\n
    • Logic-level power gating in low-voltage systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The NTR4502PT1G from onsemi is a P-channel enhancement-mode MOSFET in a compact SOT-23-3 surface-mount package. With a -30 V drain-source voltage rating, -1.9 A continuous drain current, and 200 m\u03a9 maximum on-resistance at VGS = -10 V, it is designed for load switching, battery protection, and power management in portable and space-constrained applications. […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[856],"chip_brand":[182],"class_list":["post-9607","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-ntr4502pt1g","chip_brand-onsemi"],"acf":{"brief_explanation":"P-channel MOSFET, -30V, -1.9A, 200m\u03a9, SOT-23-3 for load switching and battery protection","date_code":"","package_case":"SOT-23-3 (TO-236)","in_stock":9024,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/ntr4502p-d.pdf","price":"$0.10 @ 9000+","product_introduction":"The NTR4502PT1G from onsemi is a P-channel enhancement-mode power MOSFET housed in a miniature SOT-23-3 surface-mount package. It features a drain-source voltage rating of -30 V and a continuous drain current capability of -1.9 A, with a maximum on-resistance of 200 m\u03a9 at VGS = -10 V. The device is optimized for load switching and battery protection applications in portable electronics, where its low on-resistance minimizes conduction losses and its compact SOT-23-3 footprint enables high-density PCB layouts. The 10 nC maximum gate charge supports efficient switching at moderate frequencies with simple gate drive circuits.","working_principle":"The NTR4502PT1G operates as a voltage-controlled switch: (1) Enhancement Mode \u2014 with VGS = 0 V (gate at source potential), the P-channel MOSFET is off, and no current flows from source to drain; (2) Turn-On \u2014 applying a negative gate-to-source voltage (VGS < VGS(th)) creates an inversion layer (P-type channel) beneath the gate oxide, connecting the P+ source and drain regions and allowing hole current to flow from source to drain; (3) On-State \u2014 at VGS = -10 V, the channel is fully enhanced with RDS(ON) of 200 m\u03a9 maximum, providing efficient conduction with minimal voltage drop; (4) Body Diode \u2014 an inherent P-N junction between body and drain provides a parasitic diode that conducts when VSD is forward biased, useful in battery protection applications.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>Gate (G)<\/td>Gate terminal \u2014 drive with negative voltage relative to source to turn on<\/td><\/tr>
      2<\/td>Source (S)<\/td>Source terminal \u2014 typically connected to supply rail<\/td><\/tr>
      3<\/td>Drain (D)<\/td>Drain terminal \u2014 typically connected to load<\/td><\/tr><\/table>","application_scenarios":"
      • Single-cell Li-ion battery pack protection switch with -30 V blocking for overvoltage conditions<\/li>
      • Portable device power gating using GPIO-controlled P-MOSFET load switch with low RDS(ON)<\/li>
      • USB On-The-Go power path switching in mobile devices<\/li>
      • DC-DC buck converter high-side P-MOSFET for 5 V to 3.3 V step-down<\/li>
      • Smartphone battery charging\/discharging path selection with body diode conduction<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        FDN352AP<\/td>onsemi<\/td>Similar P-MOSFET, lower RDS(ON)<\/td><\/tr>
        DMP3160L-7<\/td>Diodes Inc<\/td>-20 V, -1.2 A alternative in SOT-23<\/td><\/tr>
        SI2301DS<\/td>Vishay<\/td>-20 V, -2.2 A, similar SOT-23 P-MOSFET<\/td><\/tr>
        AO3401A<\/td>Alpha & Omega<\/td>-30 V, -4 A, lower RDS(ON) in SOT-23<\/td><\/tr>
        IRLML6402TRPBF<\/td>Infineon<\/td>-20 V, -3.7 A, very low RDS(ON)<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9607","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=9607"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9607\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=9607"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=9607"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=9607"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=9607"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}