{"id":9545,"date":"2026-07-03T08:47:17","date_gmt":"2026-07-03T08:47:17","guid":{"rendered":"https:\/\/materialparts.com\/ssm3j338rlf\/"},"modified":"2026-07-03T08:47:17","modified_gmt":"2026-07-03T08:47:17","slug":"ssm3j338rlf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/ssm3j338rlf\/","title":{"rendered":"SSM3J338R,LF"},"content":{"rendered":"

Productos<\/h2>\n

The SSM3J338R,LF from Toshiba is a P-channel MOSFET in a SOT-23F package featuring -12 V drain-source voltage, -6 A continuous drain current, and ultra-low 17.6 mOhm on-resistance at VGS=-8 V. Using Toshiba’s U-MOSVII trench process, it provides high-efficiency switching for battery and load management in portable devices.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Tipo<\/td>\nP-Channel Enhancement MOSFET<\/td>\n<\/tr>\n
VDSS<\/td>\n-12 V<\/td>\n<\/tr>\n
VGSS<\/td>\n+\/-10 V<\/td>\n<\/tr>\n
ID<\/td>\n-6 A (continuous)<\/td>\n<\/tr>\n
RDS(on)<\/td>\n17.6 mOhm @ VGS=-8V<\/td>\n<\/tr>\n
RDS(on)<\/td>\n20.2 mOhm @ VGS=-4.5V<\/td>\n<\/tr>\n
RDS(on)<\/td>\n27.9 mOhm @ VGS=-2.5V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n-0.3 to -1.0 V<\/td>\n<\/tr>\n
Qg<\/td>\n19.5 nC @ VGS=-4.5V<\/td>\n<\/tr>\n
Ciss<\/td>\n1400 pF<\/td>\n<\/tr>\n
PD<\/td>\n1 W (Ta)<\/td>\n<\/tr>\n
Paquete<\/td>\nSOT-23F<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Ultra-low RDS(on): 17.6 mOhm at -8 V gate drive<\/li>\n
  • -6 A continuous current in tiny SOT-23F package<\/li>\n
  • Low threshold voltage: 0.3-1.0 V for direct 1.8 V logic drive<\/li>\n
  • U-MOSVII trench technology for low on-resistance<\/li>\n
  • 19.5 nC low gate charge for fast switching<\/li>\n
  • Suitable for battery switching and load management<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Battery disconnect and load switches in smartphones<\/li>\n
    • DC-DC converter synchronous rectifier<\/li>\n
    • Power path management in portable devices<\/li>\n
    • Motor driver for small brushed DC motors<\/li>\n
    • SSD and storage device power control<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The SSM3J338R,LF from Toshiba is a P-channel MOSFET in a SOT-23F package featuring -12 V drain-source voltage, -6 A continuous drain current, and ultra-low 17.6 mOhm on-resistance at VGS=-8 V. Using Toshiba’s U-MOSVII trench process, it provides high-efficiency switching for battery and load management in portable devices. Key Specifications Type P-Channel Enhancement MOSFET […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[787],"chip_brand":[145],"class_list":["post-9545","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-ssm3j338rlf","chip_brand-rohm"],"acf":{"brief_explanation":"P-ch MOSFET, -12V VDS, -6A, 17.6mOhm, SOT-23F, Toshiba","date_code":"","package_case":"SOT-23F (2.9 x 2.4 x 0.8 mm)","in_stock":7802,"datasheet":"https:\/\/toshiba.semicon-storage.com\/us\/semiconductor\/product\/mosfets\/detail.SSM3J338R.html","price":"$0.098 @ 3ku","product_introduction":"The SSM3J338R,LF from Toshiba is a P-channel MOSFET in a SOT-23F package offering -12 V drain-source voltage, -6 A continuous current, and ultra-low 17.6 mOhm on-resistance at VGS=-8 V. Built on Toshiba's U-MOSVII trench process, it provides exceptional efficiency for battery switching and load management in smartphones, tablets, and portable devices. The low threshold voltage (0.3-1.0 V) enables direct drive from 1.8 V logic, while the 19.5 nC gate charge supports fast switching at high frequencies.","working_principle":"The SSM3J338R uses Toshiba's U-MOSVII trench MOSFET technology where gate trenches are etched vertically into the silicon and the channel is formed on the trench sidewalls. This trench structure dramatically increases the channel width per unit die area compared to planar MOSFETs, enabling the ultra-low 17.6 mOhm RDS(on) in the tiny SOT-23F package. As a P-channel device, the source connects to the positive supply rail in high-side switch configurations, eliminating the need for bootstrap or charge-pump gate drive circuits required by N-channel high-side switches. The trade-off is higher RDS(on) per die area compared to N-channel (hole mobility is approximately 3x lower than electron mobility).","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>Gate<\/td>Input<\/td>MOSFET gate (voltage control terminal)<\/td><\/tr>\n
      2<\/td>Source<\/td>Power<\/td>Source terminal (connects to VCC rail)<\/td><\/tr>\n
      3<\/td>Drain<\/td>Output<\/td>Drain terminal (connects to load)<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • Battery disconnect and load switches in smartphones<\/li>\n
      • DC-DC converter synchronous rectifier<\/li>\n
      • Power path management in portable devices<\/li>\n
      • Motor driver for small brushed DC motors<\/li>\n
      • SSD and storage device power control<\/li>\n<\/ul>","alternative_models":"\n
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>\n
        Toshiba<\/td>SSM3J334R,LF<\/td>SOT-23F<\/td>-12V, -4.8A, 32 mOhm alternative<\/td><\/tr>\n
        onsemi<\/td>FDN360P<\/td>SOT-23<\/td>-12V, -2.2A, P-ch alternative<\/td><\/tr>\n
        Vishay<\/td>SI14R5EDN-T1-GE3<\/td>SOT-23<\/td>-12V, -5A alternative<\/td><\/tr>\n
        Rohm<\/td>RQ5E080ATTCL<\/td>SOT-23<\/td>-12V P-ch alternative<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9545","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=9545"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9545\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=9545"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=9545"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=9545"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=9545"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}