{"id":9390,"date":"2026-07-03T06:18:27","date_gmt":"2026-07-03T06:18:27","guid":{"rendered":"https:\/\/materialparts.com\/a1006uk-ta1nx\/"},"modified":"2026-07-03T07:38:00","modified_gmt":"2026-07-03T07:38:00","slug":"a1006uk-ta1nx","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/a1006uk-ta1nx\/","title":{"rendered":"A1006UK\/TA1NX"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The A1006UK\/TA1NX is an N-channel MOSFET from Toshiba, designed for low-voltage switching applications. The A1006 designation indicates a small-signal MOSFET with low threshold voltage, suitable for load switching and logic-level driving. The UK package suffix refers to a compact SOT-323 (SC-70) surface-mount package, and the TA1NX suffix indicates specific grading and tape-on-reel packaging.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>Tipo<\/td>\n<td>N-Channel Enhancement Mode MOSFET<\/td>\n<\/tr>\n<tr>\n<td>VDS (Drain-Source Voltage)<\/td>\n<td>60V<\/td>\n<\/tr>\n<tr>\n<td>VGS (Gate-Source Voltage)<\/td>\n<td>+\/-20V<\/td>\n<\/tr>\n<tr>\n<td>ID (Drain Current)<\/td>\n<td>0.5A (continuous)<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) (max)<\/td>\n<td>2.0 Ohm @ VGS=4.5V<\/td>\n<\/tr>\n<tr>\n<td>Vth (Gate Threshold)<\/td>\n<td>1.0V to 2.5V<\/td>\n<\/tr>\n<tr>\n<td>Input Capacitance (Ciss)<\/td>\n<td>~60 pF<\/td>\n<\/tr>\n<tr>\n<td>Power Dissipation<\/td>\n<td>0.3W<\/td>\n<\/tr>\n<tr>\n<td>Paquete<\/td>\n<td>SOT-323 (SC-70-3)<\/td>\n<\/tr>\n<tr>\n<td>Temperatura de funcionamiento<\/td>\n<td>-55C to +150C (Tj)<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>Low threshold voltage for logic-level drive<\/li>\n<li>Low on-resistance of 2.0 Ohm at 4.5V gate drive<\/li>\n<li>Compact SOT-323 package for space-constrained designs<\/li>\n<li>60V drain-source voltage rating<\/li>\n<li>Low gate charge for fast switching<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>Low-voltage load switching<\/li>\n<li>Battery management circuit switching<\/li>\n<li>Level shifting and logic interfacing<\/li>\n<li>Small motor and solenoid drive<\/li>\n<li>Power supply OR-ing and hot-swap<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The A1006UK\/TA1NX is an N-channel MOSFET from Toshiba, designed for low-voltage switching applications. The A1006 designation indicates a small-signal MOSFET with low threshold voltage, suitable for load switching and logic-level driving. The UK package suffix refers to a compact SOT-323 (SC-70) surface-mount package, and the TA1NX suffix indicates specific grading and tape-on-reel packaging. [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[536],"chip_brand":[169],"class_list":["post-9390","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-a1006uk-ta1nx","chip_brand-toshiba"],"acf":{"brief_explanation":"N-ch MOSFET, 60V\/0.5A, RDS(on) 2.0Ohm, SOT-323, low Vth logic-level drive","date_code":"25+","package_case":"SOT-323 (SC-70-3, 2.0 x 1.25 x 0.9 mm)","in_stock":46160,"datasheet":"https:\/\/toshiba.semicon-storage.com\/info\/docget.jsp?did=1371","price":"$0.08 @ 1ku","product_introduction":"The A1006UK\/TA1NX is an N-channel enhancement mode MOSFET from Toshiba, rated at 60V\/0.5A with low on-resistance of 2.0 Ohm at VGS=4.5V. Its low threshold voltage (1.0-2.5V) enables direct logic-level drive from 3.3V or 5V microcontrollers without additional gate drivers. The compact SOT-323 (SC-70) package makes it ideal for space-constrained load switching, battery management, and logic interfacing applications.","working_principle":"The A1006UK\/TA1NX operates as an N-channel enhancement mode MOSFET. When a positive gate-source voltage (VGS) exceeding the threshold voltage (Vth = 1.0-2.5V) is applied, an inversion layer forms in the P-type body region under the gate oxide, creating a conductive channel between drain and source. The drain current increases with VGS as more carriers are induced in the channel. At VGS = 4.5V, the RDS(on) is 2.0 Ohm maximum, providing efficient switching for loads up to 0.5A. The MOSFET has low gate charge (typical for this class), enabling fast switching transitions with minimal gate drive current. The body diode between source and drain provides a natural conduction path when VDS is negative, useful in bridge and motor drive configurations. The SOT-323 package provides adequate thermal performance for the 0.3W power dissipation rating through PCB copper area heatsinking.","pin_description":"<table>\n<tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr>\n<tr><td>1<\/td><td>G (Gate)<\/td><td>Input<\/td><td>MOSFET gate terminal (high impedance)<\/td><\/tr>\n<tr><td>2<\/td><td>S (Source)<\/td><td>Power<\/td><td>MOSFET source terminal \/ body diode anode<\/td><\/tr>\n<tr><td>3<\/td><td>D (Drain)<\/td><td>Power<\/td><td>MOSFET drain terminal \/ body diode cathode<\/td><\/tr>\n<\/table>","application_scenarios":"<table>\n<tr><th>Application<\/th><th>Circuit Role<\/th><th>Key Requirement<\/th><\/tr>\n<tr><td>Load Switch<\/td><td>3.3V\/5V rail power gating<\/td><td>Logic-level Vth, 0.5A, SOT-323<\/td><\/tr>\n<tr><td>Battery Management<\/td><td>Battery disconnect switch<\/td><td>Low Vth, 60V rating, low RDS(on)<\/td><\/tr>\n<tr><td>Level Shifter<\/td><td>3.3V to 5V signal translation<\/td><td>Logic-level gate, open-drain output<\/td><\/tr>\n<tr><td>Motor Drive<\/td><td>Small DC motor H-bridge<\/td><td>0.5A, fast switching, body diode<\/td><\/tr>\n<tr><td>Hot-Swap<\/td><td>Inrush current limiter<\/td><td>60V, controlled turn-on, 0.3W<\/td><\/tr>\n<\/table>","alternative_models":"<table>\n<tr><th>Model<\/th><th>Manufacturer<\/th><th>Key Difference<\/th><\/tr>\n<tr><td>2N7002K-T1-GE3<\/td><td>Vishay<\/td><td>60V\/0.3A, SOT-23, logic-level MOSFET<\/td><\/tr>\n<tr><td>BSS138-7-F<\/td><td>Diodes Inc<\/td><td>50V\/0.2A, SOT-23, low Vth<\/td><\/tr>\n<tr><td>DMN2075U-7<\/td><td>Diodes Inc<\/td><td>20V\/0.5A, SOT-23, very low RDS(on)<\/td><\/tr>\n<tr><td>SIA436DJ-T1-GE3<\/td><td>Vishay<\/td><td>30V\/1.1A, SOT-363 (dual), lower RDS<\/td><\/tr>\n<tr><td>TSM2302CX<\/td><td>Taiwan Semi<\/td><td>20V\/0.5A, SOT-323, P-channel complement<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9390","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=9390"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9390\/revisions"}],"predecessor-version":[{"id":9418,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9390\/revisions\/9418"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=9390"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=9390"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=9390"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=9390"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}