{"id":9289,"date":"2026-07-03T04:45:21","date_gmt":"2026-07-03T04:45:21","guid":{"rendered":"https:\/\/materialparts.com\/sqs401en\/"},"modified":"2026-07-03T04:45:46","modified_gmt":"2026-07-03T04:45:46","slug":"sqs401en","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/sqs401en\/","title":{"rendered":"SQS401EN"},"content":{"rendered":"

Productos<\/h2>\n

The SQS401EN is an automotive P-Channel TrenchFET power MOSFET from Vishay Siliconix, featuring -40V drain-source voltage and -16A continuous drain current in a compact PowerPAK 1212-8 surface-mount package. With 29 mOhm maximum RDS(on) and AEC-Q101 qualification, it is designed for high-side load switching and reverse polarity protection in automotive applications. 100% Rg and UIS tested for guaranteed reliability.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
Channel Type<\/td>\nP-Channel<\/td>\n<\/tr>\n
VDS<\/td>\n-40V<\/td>\n<\/tr>\n
ID (continuo)<\/td>\n-16A<\/td>\n<\/tr>\n
RDS(on) max<\/td>\n29 mOhm @ VGS=-10V<\/td>\n<\/tr>\n
Qg (total gate charge)<\/td>\n21.2 nC<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n62.5W<\/td>\n<\/tr>\n
Paquete<\/td>\nPowerPAK 1212-8<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n
Cualificaci\u00f3n<\/td>\nAEC-Q101<\/td>\n<\/tr>\n
Technology<\/td>\nTrenchFET<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • AEC-Q101 automotive qualified<\/li>\n
  • P-Channel for high-side switching<\/li>\n
  • Low 29 mOhm RDS(on) for minimal conduction loss<\/li>\n
  • 100% Rg and UIS tested<\/li>\n
  • PowerPAK 1212-8 compact footprint<\/li>\n
  • -55\u00b0C to +175\u00b0C extended temperature range<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Automotive high-side load switching<\/li>\n
    • Reverse polarity protection<\/li>\n
    • Battery disconnect switches<\/li>\n
    • Power distribution in automotive ECUs<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The SQS401EN is an automotive P-Channel TrenchFET power MOSFET from Vishay Siliconix, featuring -40V drain-source voltage and -16A continuous drain current in a compact PowerPAK 1212-8 surface-mount package. With 29 mOhm maximum RDS(on) and AEC-Q101 qualification, it is designed for high-side load switching and reverse polarity protection in automotive applications. 100% Rg and […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[445],"chip_brand":[136],"class_list":["post-9289","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-sqs401en","chip_brand-vishay"],"acf":{"brief_explanation":"P-Channel MOSFET, -40V, -16A, 29mOhm RDS(on), PowerPAK 1212-8, AEC-Q101","date_code":"","package_case":"PowerPAK 1212-8 (3.3 x 3.3 x 1.1 mm)","in_stock":12000,"datasheet":"https:\/\/www.vishay.com\/docs\/65558\/sqs401en.pdf","price":"$0.38 @ 3ku","product_introduction":"The SQS401EN is an automotive P-Channel TrenchFET power MOSFET from Vishay Siliconix, featuring -40V drain-source voltage and -16A continuous drain current in a compact PowerPAK 1212-8 surface-mount package. With 29 mOhm maximum RDS(on) and AEC-Q101 qualification, it is designed for high-side load switching and reverse polarity protection in automotive applications. The TrenchFET technology provides low on-resistance with efficient die utilization. 100% Rg and UIS tested for guaranteed reliability in safety-critical applications.","working_principle":"The SQS401EN operates as a P-Channel enhancement-mode MOSFET:\n\n1. TrenchFET Structure: The trench gate architecture provides high channel density, resulting in low RDS(on) in a compact die. Vertical current flow from source (top) through the channel to drain (bottom) maximizes current handling per unit area.\n\n2. P-Channel Operation: Current flows from source to drain when the gate is pulled below the source (VGS < Vth). For a P-Channel MOSFET, the gate must be negative relative to the source to turn ON. This makes P-Channel MOSFETs ideal for high-side switching, where the load is connected between the MOSFET drain and ground.\n\n3. RDS(on) and Switching: The 29 mOhm RDS(on) at VGS=-10V ensures minimal voltage drop and conduction loss. The 21.2 nC total gate charge enables efficient switching at moderate frequencies.\n\n4. UIS (Unclamped Inductive Switching): 100% UIS tested means each device can safely absorb the energy from an unclamped inductive load, critical for automotive relay and solenoid driving applications.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>Source<\/td>Power<\/td>Source terminal - connected to power rail for high-side switch<\/td><\/tr>\n
      2<\/td>Gate<\/td>Input<\/td>Gate terminal - controls MOSFET on\/off state<\/td><\/tr>\n
      3<\/td>Drain<\/td>Power<\/td>Drain terminal - connected to load<\/td><\/tr>\n
      4<\/td>Source<\/td>Power<\/td>Source terminal (parallels pin 1 for current handling)<\/td><\/tr>\n<\/table>\n

      Note: PowerPAK 1212-8 pinout. Pins 1,4 are source; Pin 2 is gate; Pins 3,5,6,7,8 are drain. Multiple drain pins reduce parasitic inductance and improve current handling. The large drain pad area also serves as the primary thermal path to the PCB.<\/p>","application_scenarios":"\n
      Application<\/th>Circuit Role<\/th>Key Requirement<\/th><\/tr>\n
      Automotive High-Side Switch<\/td>Load switching for lights, motors<\/td>-40V, -16A, AEC-Q101<\/td><\/tr>\n
      Reverse Polarity Protection<\/td>Series MOSFET blocking reverse voltage<\/td>P-Channel, low RDS(on)<\/td><\/tr>\n
      Battery Disconnect<\/td>Master power switch<\/td>62.5W, 175\u00b0C max<\/td><\/tr>\n
      Power Distribution<\/td>ECU power domain switching<\/td>AEC-Q101, 100% UIS tested<\/td><\/tr>\n
      Solenoid Driver<\/td>Inductive load control<\/td>UIS capability, 29 mOhm<\/td><\/tr>\n<\/table>","alternative_models":"\n
      Manufacturer<\/th>Part Number<\/th>Package<\/th>Key Specs<\/th>Notes<\/th><\/tr>\n
      Vishay<\/td>SQS411ENW-T1_GE3<\/td>PowerPAK 1212-8<\/td>-40V, -16A, P-Channel<\/td>Upgrade: Cu wire + wettable flanks<\/td><\/tr>\n
      Infineon<\/td>BSZ40P2P2E6327<\/td>PG-TSDSON-8<\/td>-40V, -17A, P-Channel<\/td>Similar specs<\/td><\/tr>\n
      ON Semi<\/td>FDD6685<\/td>Power56<\/td>-40V, -16A, P-Channel<\/td>Similar specs<\/td><\/tr>\n
      ROHM<\/td>RS1E200GNBTL<\/td>HSMT8<\/td>-40V, -20A, P-Channel<\/td>Higher current<\/td><\/tr>\n
      Diodes Inc<\/td>DMN4050SSS-13<\/td>SO-8<\/td>-40V, -10A, P-Channel<\/td>Lower current, different pkg<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9289","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=9289"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9289\/revisions"}],"predecessor-version":[{"id":9299,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9289\/revisions\/9299"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=9289"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=9289"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=9289"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=9289"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}