{"id":9182,"date":"2026-07-02T13:34:02","date_gmt":"2026-07-02T13:34:02","guid":{"rendered":"https:\/\/materialparts.com\/sqs411enw-t1-ge3\/"},"modified":"2026-07-03T08:05:08","modified_gmt":"2026-07-03T08:05:08","slug":"sqs411enw-t1-ge3","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/sqs411enw-t1-ge3\/","title":{"rendered":"SQS411ENW-T1-GE3"},"content":{"rendered":"

Productos<\/h2>\n

The SQS411ENW-T1-GE3 is a Vishay Siliconix AEC-Q101 qualified P-channel 40V TrenchFET\u00ae power MOSFET in a PowerPAK 1212-8W package. With 27.3m\u03a9 max RDS(on) at 10V, 16A continuous drain current, and 53.6W power dissipation, it is designed for automotive load switching, motor drive, and DC-DC converter applications requiring high current in a compact footprint.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
Channel Type<\/td>\nP-Channel Enhancement<\/td>\n<\/tr>\n
Drain-Source Voltage (VDSS)<\/td>\n40V (some sources list -30V)<\/td>\n<\/tr>\n
On-Resistance (RDS(on)) Max<\/td>\n27.3m\u03a9 @ VGS=-10V, ID=-8A<\/td>\n<\/tr>\n
On-Resistance (RDS(on)) Typ<\/td>\n21m\u03a9 @ -10V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n-16A (TC=25\u00b0C)<\/td>\n<\/tr>\n
Gate Charge (Qg) Max<\/td>\n50nC @ VGS=-10V<\/td>\n<\/tr>\n
Input Capacitance (Ciss) Max<\/td>\n3191pF @ VDS=-25V<\/td>\n<\/tr>\n
Gate Threshold (VGS(th)) Max<\/td>\n-2.5V @ ID=-250\u03bcA<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n53.6W (TC=25\u00b0C)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n
Cualificaci\u00f3n<\/td>\nAEC-Q101<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • AEC-Q101 qualified, TrenchFET\u00ae technology<\/li>\n
  • P-Channel 40V, 16A in compact PowerPAK 1212-8W<\/li>\n
  • Low RDS(on): 21m\u03a9 typ. at -10V<\/li>\n
  • High power dissipation: 53.6W<\/li>\n
  • MSL 1 – Unlimited moisture sensitivity<\/li>\n
  • Halogen-free, lead-free<\/li>\n
  • 100% Rg and UIS tested<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Automotive load switching<\/li>\n
    • DC-DC converter high-side P-channel switch<\/li>\n
    • Motor drive and bridge circuits<\/li>\n
    • Battery protection and management<\/li>\n
    • Power supply OR-ing<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The SQS411ENW-T1-GE3 is a Vishay Siliconix AEC-Q101 qualified P-channel 40V TrenchFET\u00ae power MOSFET in a PowerPAK 1212-8W package. With 27.3m\u03a9 max RDS(on) at 10V, 16A continuous drain current, and 53.6W power dissipation, it is designed for automotive load switching, motor drive, and DC-DC converter applications requiring high current in a compact footprint. Key […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[727],"chip_brand":[136],"class_list":["post-9182","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-sqs411enw-t1-ge3","chip_brand-vishay"],"acf":{"brief_explanation":"AEC-Q101 P-ch 40V 16A 27.3m\u03a9 TrenchFET, PowerPAK 1212-8W, halogen-free","date_code":"","package_case":"PowerPAK 1212-8W (3.3 x 3.3 x 1.07 mm)","in_stock":8754,"datasheet":"https:\/\/www.vishay.com\/docs\/75720\/sqs411enw.pdf","price":"$0.88 @ 1ku","product_introduction":"The SQS411ENW-T1-GE3 is a Vishay Siliconix AEC-Q101 qualified P-channel 40V TrenchFET\u00ae power MOSFET in a PowerPAK 1212-8W package. With 27.3m\u03a9 max RDS(on) at -10V, 16A continuous drain current, 50nC gate charge, and 53.6W power dissipation, it provides high-current P-channel switching in a compact 3.3x3.3mm footprint. Features include 100% Rg and UIS testing, MSL 1 rating, and halogen-free construction. Ideal for automotive load switching, DC-DC converter high-side switches, and battery management applications.","working_principle":"The SQS411ENW-T1-GE3 is a P-channel enhancement-mode power MOSFET built on Vishay's TrenchFET\u00ae technology. When a negative gate-source voltage (below the threshold of -2.5V max) is applied, an inversion layer (conductive channel) forms between the source and drain P+ regions, allowing current to flow from source to drain. The trench gate construction maximizes channel density, achieving 21m\u03a9 typical RDS(on) in the compact PowerPAK 1212-8W footprint. The exposed pad on the bottom of the package provides a low thermal resistance path to the PCB, enabling 53.6W power dissipation. The PowerPAK 1212-8W package uses a quad-drain, triple-source terminal configuration to minimize package parasitic inductance and resistance, critical for high-frequency switching applications.","pin_description":"
      Pin<\/th>Mnemonic<\/th>Description<\/th><\/tr>
      1<\/td>G<\/td>Gate<\/td><\/tr>
      2<\/td>S<\/td>Source<\/td><\/tr>
      3<\/td>S<\/td>Source<\/td><\/tr>
      4<\/td>S<\/td>Source<\/td><\/tr>
      5<\/td>D<\/td>Drain<\/td><\/tr>
      6<\/td>D<\/td>Drain<\/td><\/tr>
      7<\/td>D<\/td>Drain<\/td><\/tr>
      8<\/td>D<\/td>Drain<\/td><\/tr>
      EP<\/td>D<\/td>Exposed pad (drain, thermal)<\/td><\/tr><\/table>","application_scenarios":"
      • Automotive 12V load switch with P-channel high-side configuration at 27.3m\u03a9 and 16A<\/li>\n
      • DC-DC buck converter with P-channel high-side switch eliminating bootstrap circuitry<\/li>\n
      • Battery protection and management with P-channel reverse polarity blocking<\/li>\n
      • Motor drive H-bridge complementary P-channel element with AEC-Q101 qualification<\/li>\n
      • Power supply OR-ing diode replacement with bidirectional blocking capability<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        SQS7415CENW-T1_GE3<\/td>Vishay<\/td>P-ch, 60V, 16A, 6.5m\u03a9, same package<\/td><\/tr>
        FDD8580<\/td>onsemi<\/td>P-ch, 30V, 18A, 17m\u03a9, PowerPAK SO-8<\/td><\/tr>
        IRFR9310TRPBF<\/td>Infineon<\/td>P-ch, 400V, 0.44A, D-Pak<\/td><\/tr>
        SI2333DDS-T1-GE3<\/td>Vishay<\/td>P-ch, 30V, 4.2A, SOT-23<\/td><\/tr>
        AOD4185<\/td>AOS<\/td>P-ch, 40V, 20A, D-Pak<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9182","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=9182"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9182\/revisions"}],"predecessor-version":[{"id":9205,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/9182\/revisions\/9205"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=9182"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=9182"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=9182"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=9182"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}