The onsemi SMLR5602T1G is a bias resistor transistor (BRT) integrating an NPN transistor with built-in bias resistors (R1 = 1 k\u03a9, R2 = 1 k\u03a9) in a SOT-23-3 package. Designed for space-efficient digital switching applications, it eliminates external resistors and simplifies PCB layout.<\/p>\n
| Polarity<\/td>\n | NPN<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||
VCEO<\/sub> Max<\/td>\n| 50 V<\/td>\n<\/tr>\n | IC<\/sub> Max<\/td>\n | 500 mA<\/td>\n<\/tr>\n | R1 (Input Resistor)<\/td>\n | 1 k\u03a9<\/td>\n<\/tr>\n | R2 (Base-Emitter Resistor)<\/td>\n | 1 k\u03a9<\/td>\n<\/tr>\n | hFE<\/sub> Min<\/td>\n | 120<\/td>\n<\/tr>\n | VCE(sat)<\/sub> Max<\/td>\n | 0.25 V @ Ic=50mA<\/td>\n<\/tr>\n | Temperatura de funcionamiento<\/td>\n | -55 \u00b0C to +150 \u00b0C<\/td>\n<\/tr>\n | Paquete<\/td>\n | SOT-23-3<\/td>\n<\/tr>\n<\/table>\n | Caracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The onsemi SMLR5602T1G is a bias resistor transistor (BRT) integrating an NPN transistor with built-in bias resistors (R1 = 1 k\u03a9, R2 = 1 k\u03a9) in a SOT-23-3 package. Designed for space-efficient digital switching applications, it eliminates external resistors and simplifies PCB layout. Key Specifications Polarity NPN VCEO Max 50 V IC Max […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[683],"chip_brand":[144],"class_list":["post-9117","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","tag-smlr5602t1g","chip_brand-on"],"acf":{"brief_explanation":"NPN bias resistor transistor, 50V, 500mA, R1=R2=1k\u03a9, SOT-23-3","date_code":"","package_case":"SOT-23-3 (2.9 x 1.3 x 1.0 mm)","in_stock":6893,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/smlr5602-d.pdf","price":"$0.04 @ 1ku","product_introduction":"The onsemi SMLR5602T1G is a single NPN bias resistor transistor (BRT) that integrates an NPN switching transistor with built-in base bias resistors (R1 = 1 k\u03a9, R2 = 1 k\u03a9) in a 3-pin SOT-23 package. The 1 k\u03a9 input resistance is the lowest in the BRT family, providing the highest base drive current for a given input voltage \u2014 approximately 4.3 mA from a 5 V logic signal (5V - 0.7V \/ 1k\u03a9). Combined with the minimum hFE of 120, this supports collector currents up to 500 mA, making it one of the highest-current BRT options available. The device replaces a discrete transistor plus two external resistors with a single 3-pin component, simplifying schematic design, reducing BOM count, and saving PCB area. It is ideal for relay and solenoid drivers, LED control, and general-purpose digital switching where moderate current capability is needed.","working_principle":"The SMLR5602T1G integrates an NPN transistor with a series base resistor (R1 = 1 k\u03a9) and a parallel base-emitter shunt resistor (R2 = 1 k\u03a9) into a single 3-pin device. When a voltage above the turn-on threshold is applied to the input (B) pin, current flows through R1 into the transistor base, turning it on. The low 1 k\u03a9 value of R1 provides high base drive current: at 5 V input, approximately 4.3 mA flows into the base, which with hFE of 120 can support 500 mA of collector current. R2 serves two purposes: (1) it provides a defined turn-off path for base leakage current, ensuring the transistor switches off cleanly when the input goes low; (2) it shunts away thermal leakage current that could cause parasitic turn-on at high temperatures. The 3-pin package (Input, Ground\/Emitter, Output\/Collector) provides the simplest possible connection: apply logic signal to input, connect emitter to ground, and the collector switches the load.","pin_description":"
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