The onsemi SMUN5311DW1T1G is a dual NPN pre-biased digital transistor integrating two independent NPN transistors with built-in bias resistors (R1 = 10 k\u03a9, R2 = 10 k\u03a9) in a single SOT-363 (SC-88) package. AEC-Q101 qualified for automotive applications, it simplifies digital switching circuit design by eliminating external components.<\/p>\n
| Configuraci\u00f3n<\/td>\n | Dual NPN<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VCEO<\/sub> Max<\/td>\n| 50 V<\/td>\n<\/tr>\n | IC<\/sub> Max<\/td>\n | 100 mA<\/td>\n<\/tr>\n | R1 (Input Resistor)<\/td>\n | 10 k\u03a9<\/td>\n<\/tr>\n | R2 (Base-Emitter Resistor)<\/td>\n | 10 k\u03a9<\/td>\n<\/tr>\n | R1\/R2 Ratio<\/td>\n | 1<\/td>\n<\/tr>\n | hFE<\/sub> Min<\/td>\n | 80<\/td>\n<\/tr>\n | VCE(sat)<\/sub> Max<\/td>\n | 0.25 V<\/td>\n<\/tr>\n | Temperatura de funcionamiento<\/td>\n | -55 \u00b0C to +150 \u00b0C<\/td>\n<\/tr>\n | Paquete<\/td>\n | SOT-363 (SC-88)<\/td>\n<\/tr>\n<\/table>\n | Caracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The onsemi SMUN5311DW1T1G is a dual NPN pre-biased digital transistor integrating two independent NPN transistors with built-in bias resistors (R1 = 10 k\u03a9, R2 = 10 k\u03a9) in a single SOT-363 (SC-88) package. AEC-Q101 qualified for automotive applications, it simplifies digital switching circuit design by eliminating external components. Key Specifications Configuration Dual NPN […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[682],"chip_brand":[144],"class_list":["post-9116","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","tag-smun5311dw1t1g","chip_brand-on"],"acf":{"brief_explanation":"Dual NPN pre-biased digital transistor, 50V, 100mA, R1=R2=10k\u03a9, SOT-363, AEC-Q101","date_code":"","package_case":"SOT-363 (SC-88) (2.0 x 1.25 x 0.9 mm)","in_stock":8534,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/mun5311dw1-d.pdf","price":"$0.06 @ 1ku","product_introduction":"The onsemi SMUN5311DW1T1G is a dual NPN pre-biased digital transistor that integrates two independent NPN switching transistors with built-in 10 k\u03a9 base resistors in a compact SOT-363 package. The integrated R1 (10 k\u03a9 input resistor) and R2 (10 k\u03a9 base-emitter shunt resistor) eliminate the need for external bias components, reducing BOM count and PCB area. With 10 k\u03a9 input resistance, the device is optimized for direct drive from 3.3 V and 5 V logic outputs, providing appropriate base drive current without overloading the source. AEC-Q101 qualification ensures automotive-grade reliability across the -55 \u00b0C to +150 \u00b0C operating range. The dual configuration enables two independent switching channels in the footprint of a single SOT-363 package, making it ideal for space-constrained automotive body electronics.","working_principle":"The SMUN5311DW1T1G integrates two independent pre-biased NPN transistor circuits. Each channel consists of an NPN transistor with a series base resistor (R1 = 10 k\u03a9) and a parallel base-emitter resistor (R2 = 10 k\u03a9). When a logic-high voltage is applied to the input pin, current flows through R1 into the base, turning on the transistor. The 10 k\u03a9 R1 at 5 V logic provides approximately 430 \u00b5A of base current (5V - 0.7V)\/10k\u03a9, which with hFE of 80 supports up to 34 mA of collector current. When the input goes low, R2 provides a discharge path for stored base charge, ensuring fast turn-off. The R1\/R2 = 1 ratio provides balanced switching characteristics suitable for general-purpose digital signal interfacing. The two channels are electrically isolated, allowing independent operation or combined use in differential\/relay driver circuits.","pin_description":"
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