The BSZ097N04LSG is an Infineon OptiMOS 4 single N-channel 40V power MOSFET with 9.7mohm max RDS(on) at VGS=10V and 50A continuous drain current. It features logic-level gate drive and PG-TSDSON-8 (Power33) package for high power density.<\/p>\n
| VDS<\/td>\n | 40 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||
| ID<\/td>\n | 50 A<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||
| RDS(on) max<\/td>\n | 9.7 mohm @ 10V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||
| Qg<\/td>\n | 20 nC typical<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||
| Technology<\/td>\n | OptiMOS 4<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||
| Paquete<\/td>\n | PG-TSDSON-8<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The BSZ097N04LSG is an Infineon OptiMOS 4 single N-channel 40V power MOSFET with 9.7mohm max RDS(on) at VGS=10V and 50A continuous drain current. It features logic-level gate drive and PG-TSDSON-8 (Power33) package for high power density. Key Specifications VDS 40 V ID 50 A RDS(on) max 9.7 mohm @ 10V Qg 20 nC […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-8813","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"N-ch MOSFET, 40V\/50A, 9.7mohm, OptiMOS4, TSDSON-8","date_code":"","package_case":"PG-TSDSON-8 (5.3 x 6.2 x 1.0 mm)","in_stock":6800,"datasheet":"https:\/\/www.infineon.com\/dgdl\/Infineon-BSZ097N04LS-DS-v02_00-EN.pdf","price":"$0.72 @ 1ku","product_introduction":"The BSZ097N04LSG is an Infineon OptiMOS 4 single N-channel 40V power MOSFET in a PG-TSDSON-8 (Power33) surface-mount package. The 9.7mohm maximum on-resistance at VGS=10V and 50A continuous current rating make it suitable for high-current synchronous buck converter and motor drive applications. The OptiMOS 4 trench-gate technology achieves the industry-leading RDS(on) x gate charge (FOM) figure of merit, optimizing both conduction and switching losses. The logic-level gate threshold enables direct drive from 5V or 3.3V microcontrollers and gate driver ICs. The low 20nC typical total gate charge minimizes gate drive power dissipation at high switching frequencies. The PG-TSDSON-8 package with large exposed drain pad provides low thermal resistance for high-power-density designs. The -LSG suffix indicates tape-and-reel, RoHS-compliant packaging.","working_principle":"The BSZ097N04LSG uses Infineons OptiMOS 4 trench-gate technology. Vertical trenches are etched into the silicon wafer with gate oxide and polysilicon gate electrodes filling the trenches. This creates multiple vertical MOSFET channels along the trench sidewalls, dramatically increasing channel width per unit die area compared to planar MOSFETs. The result is very low specific on-resistance (RDS(on) x Area). When VGS exceeds the threshold (typically 1.5V), an inversion layer forms along the trench sidewalls, creating a conductive channel between source and drain. At VGS=10V, the channel is fully enhanced with 9.7mohm max RDS(on). When VGS=0V, the channel is off, blocking up to 40V drain-source voltage. The low gate charge (20nC) means less energy is required to switch the MOSFET, reducing gate driver power dissipation at high switching frequencies.","pin_description":"
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