The CY7C1069G30-10ZSXI is an Infineon (formerly Cypress) 16-Mbit (2 Mbyte) synchronous SRAM organized as 1M x 16. It operates at 3.3 V with a 10 ns access time (100 MHz clock rate), supporting high-performance cache and buffer applications. The device is packaged in a 54-ball VFBGA and rated for -40\u00b0C to +85\u00b0C.<\/p>\n
| Densidad<\/td>\n | 16 Mbit (2 MB)<\/td>\n<\/tr>\n | |||||||||||||||
| Organization<\/td>\n | 1M x 16<\/td>\n<\/tr>\n | |||||||||||||||
| Access Time<\/td>\n | 10 ns (100 MHz)<\/td>\n<\/tr>\n | |||||||||||||||
| Tensi\u00f3n de alimentaci\u00f3n<\/td>\n | 3.3 V<\/td>\n<\/tr>\n | |||||||||||||||
| Interface<\/td>\n | Synchronous SRAM<\/td>\n<\/tr>\n | |||||||||||||||
| Paquete<\/td>\n | 54-Ball VFBGA<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The CY7C1069G30-10ZSXI is an Infineon (formerly Cypress) 16-Mbit (2 Mbyte) synchronous SRAM organized as 1M x 16. It operates at 3.3 V with a 10 ns access time (100 MHz clock rate), supporting high-performance cache and buffer applications. The device is packaged in a 54-ball VFBGA and rated for -40\u00b0C to +85\u00b0C. Key […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,20],"tags":[],"chip_brand":[173],"class_list":["post-8723","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-interface-ics","chip_brand-infineon"],"acf":{"brief_explanation":"16Mbit (1Mx16) synchronous SRAM, 10ns access, 3.3V, 54-ball VFBGA","date_code":"","package_case":"54-Ball VFBGA (8.0 x 13.0 x 1.0 mm)","in_stock":3280,"datasheet":"https:\/\/www.infineon.com\/dgdl\/Infineon-CY7C1069G30-DS-v01_00-EN.pdf","price":"","product_introduction":"The CY7C1069G30-10ZSXI is an Infineon 16-Mbit synchronous SRAM organized as 1M x 16 bits. With 10 ns access time supporting 100 MHz clock rate, it is designed for high-performance cache and buffer applications in networking and computing systems. The synchronous interface supports burst read\/write operations with internally controlled address incrementing, maximizing bandwidth for sequential data transfers. The 3.3 V single supply and 54-ball VFBGA package provide a compact solution for space-constrained designs. The device operates from -40\u00b0C to +85\u00b0C.","working_principle":"The CY7C1069G30 operates as a synchronous SRAM with clock-driven operation. All inputs (address, data, control) are registered on the rising edge of the clock (CLK), eliminating setup time uncertainty and enabling high-speed pipelined operation. During a read cycle, the addressed data is driven onto the data bus after the clock-to-output delay (10 ns). During a write cycle, input data is registered and written to the addressed location. The synchronous burst mode automatically increments the internal address counter for consecutive reads or writes, reducing address bus bandwidth requirements. Byte-write capability allows selective writing of upper and lower bytes independently.","pin_description":" 54-ball VFBGA with key signal groups: A0-A19 (address inputs), DQ0-DQ15 (data I\/O), CLK (clock), ADV\/LD (address advance\/load), CE1, CE2 (chip enables), OE (output enable), WE (write enable), BWa, BWb (byte writes), MODE (burst mode select), VDD (3.3V supply), VSS (ground), and ZZ (sleep mode). Refer to the datasheet pin diagram for complete 54-ball mapping.<\/p>","application_scenarios":"
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