{"id":8434,"date":"2026-06-29T00:47:52","date_gmt":"2026-06-29T00:47:52","guid":{"rendered":"https:\/\/materialparts.com\/ssm3j334rlfb\/"},"modified":"2026-06-29T00:47:52","modified_gmt":"2026-06-29T00:47:52","slug":"ssm3j334rlfb","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/ssm3j334rlfb\/","title":{"rendered":"SSM3J334R,LF(B"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The SSM3J334R,LF(B from Toshiba is a P-channel MOSFET built on U-MOS VI technology, rated at -30 V VDSS and -4.0 A ID in a compact SOT-23F package. It features low on-resistance of 71 m\u03a9 max at VGS = -10 V and 105 m\u03a9 max at VGS = -4.5 V, making it ideal for power management switch applications requiring logic-level gate drive.<\/p>\n<h2>Especificaciones<\/h2>\n<ul>\n<li>Polarity: P-channel<\/li>\n<li>VDSS: -30 V<\/li>\n<li>ID: -4.0 A<\/li>\n<li>RDS(on): 71 m\u03a9 max @ VGS = -10 V \/ 105 m\u03a9 max @ VGS = -4.5 V \/ 136 m\u03a9 max @ VGS = -4 V<\/li>\n<li>VGS(th): -0.8 to -2.0 V<\/li>\n<li>Qg: 5.9 nC typ @ -10 V<\/li>\n<li>CISS: 280 pF<\/li>\n<li>VSD (body diode): 1.2 V max @ 4 A<\/li>\n<li>PD: 1.0 W (Ta = 25\u00b0C)<\/li>\n<li>Operating Temperature: up to 150\u00b0C (Tj)<\/li>\n<li>Package: SOT-23F (2.9 \u00d7 2.4 \u00d7 0.8 mm)<\/li>\n<\/ul>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>U-MOS VI generation for low RDS(on)<\/li>\n<li>Logic-level gate drive (4 V \/ 4.5 V \/ 10 V)<\/li>\n<li>Extremely compact SOT-23F with flat leads<\/li>\n<li>Low gate charge for fast switching<\/li>\n<li>RoHS compliant<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>Power management switches<\/li>\n<li>Battery protection circuits<\/li>\n<li>Load switches in portable devices<\/li>\n<li>DC-DC converter high-side switches<\/li>\n<li>Li-Ion battery disconnect<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The SSM3J334R,LF(B from Toshiba is a P-channel MOSFET built on U-MOS VI technology, rated at -30 V VDSS and -4.0 A ID in a compact SOT-23F package. It features low on-resistance of 71 m\u03a9 max at VGS = -10 V and 105 m\u03a9 max at VGS = -4.5 V, making it ideal for [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[169],"class_list":["post-8434","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-toshiba"],"acf":{"brief_explanation":"P-ch 30V 4A MOSFET, 71m\u03a9 Ron, U-MOS VI, SOT-23F","date_code":"","package_case":"SOT-23F (2.9 \u00d7 2.4 \u00d7 0.8 mm)","in_stock":14135,"datasheet":"https:\/\/toshiba.semicon-storage.com\/us\/semiconductor\/product\/mosfets\/detail.SSM3J334R.html","price":"$0.10 @ 1ku","product_introduction":"The SSM3J334R from Toshiba is a P-channel power MOSFET built on the U-MOS VI process technology, offering -30 V drain-source voltage and -4 A continuous drain current in a compact SOT-23F package. The device achieves low on-resistance of 71 m\u03a9 maximum at VGS = -10 V and 105 m\u03a9 maximum at VGS = -4.5 V, enabling efficient power switching with logic-level gate drive. The low gate charge of 5.9 nC supports high-frequency switching with minimal drive power. The ultra-thin SOT-23F package (0.8 mm height) is ideal for space-constrained portable devices. Applications include power management switches, battery disconnect circuits, load switches, and high-side DC-DC converter switching elements.","working_principle":"The SSM3J334R operates as a voltage-controlled P-channel MOSFET. When the gate voltage is pulled below the source by more than the threshold voltage (VGS(th) = -0.8 to -2.0 V), an inversion channel forms in the p-body connecting source to drain, allowing current flow from source to drain. The U-MOS VI trench-gate structure provides high cell density, resulting in low RDS(on) per unit area. The flat-lead SOT-23F package provides improved thermal performance compared to standard SOT-23 due to better PCB thermal coupling. The low VGS(th) range enables direct drive from 3.3 V or 5 V logic. The body diode (VSD = 1.2 V max) provides a freewheeling current path in inductive switching applications.","pin_description":"<table border=\"1\"><tr><th>Pin<\/th><th>Name<\/th><th>Description<\/th><\/tr><tr><td>1<\/td><td>Gate<\/td><td>Gate Input<\/td><\/tr><tr><td>2<\/td><td>Source<\/td><td>Source<\/td><\/tr><tr><td>3<\/td><td>Drain<\/td><td>Drain<\/td><\/tr><\/table>","application_scenarios":"<ul><li><b>Li-Ion Battery Disconnect<\/b>: High-side P-channel switch for battery protection with -30 V rating covering full charge range<\/li><li><b>Load Switch in Portables<\/b>: Logic-level gate drive (4.5 V) enables microcontroller-controlled power rail switching<\/li><li><b>DC-DC High-Side Switch<\/b>: 71 m\u03a9 RDS(on) at -10 V gate drive for buck-boost converter input switching<\/li><li><b>Reverse Polarity Protection<\/b>: P-channel series pass element with gate tied to ground for automatic polarity blocking<\/li><li><b>Power Routing<\/b>: Multiple rail selection in battery\/supercap backup systems with low 136 m\u03a9 Ron at 4 V drive<\/li><\/ul>","alternative_models":"<table border=\"1\"><tr><th>Model<\/th><th>Brand<\/th><th>VDSS (V)<\/th><th>Ron (m\u03a9)<\/th><th>Package<\/th><\/tr><tr><td>SSM3J332R<\/td><td>Toshiba<\/td><td>-12<\/td><td>38<\/td><td>SOT-23F<\/td><\/tr><tr><td>SI2301DS<\/td><td>Vishay<\/td><td>-20<\/td><td>87<\/td><td>SOT-23<\/td><\/tr><tr><td>DMP3099L<\/td><td>Diodes Inc<\/td><td>-30<\/td><td>65<\/td><td>SOT-23<\/td><\/tr><tr><td>AO3401A<\/td><td>AOS<\/td><td>-30<\/td><td>36<\/td><td>SOT-23<\/td><\/tr><tr><td>IRLML6402<\/td><td>Infineon<\/td><td>-20<\/td><td>60<\/td><td>SOT-23<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/8434","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=8434"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/8434\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=8434"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=8434"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=8434"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=8434"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}