{"id":8363,"date":"2026-06-28T12:43:01","date_gmt":"2026-06-28T12:43:01","guid":{"rendered":"https:\/\/materialparts.com\/rfpa3800\/"},"modified":"2026-06-28T12:43:01","modified_gmt":"2026-06-28T12:43:01","slug":"rfpa3800","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/rfpa3800\/","title":{"rendered":"RFPA3800"},"content":{"rendered":"

Productos<\/h2>\n

The RFPA3800 from Qorvo is a high-power GaN MMIC power amplifier designed for cellular infrastructure applications. Operating in the 1.8-2.7 GHz frequency range, it delivers high output power with excellent efficiency for 4G\/5G base station transmit chains.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n
Frequency Range<\/td>\n1.8 to 2.7 GHz<\/td>\n<\/tr>\n
Technology<\/td>\nGaN on SiC<\/td>\n<\/tr>\n
Aplicaci\u00f3n<\/td>\nCellular infrastructure PA<\/td>\n<\/tr>\n
Tensi\u00f3n de alimentaci\u00f3n<\/td>\n28 V (typical)<\/td>\n<\/tr>\n
Paquete<\/td>\nQFN \/ Flange<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • GaN-on-SiC technology for high power density and thermal performance<\/li>\n
  • Optimized for Doherty and push-pull base station architectures<\/li>\n
  • Wide bandwidth supporting multiple cellular bands<\/li>\n
  • High linear output power for 4G LTE and 5G NR signals<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • 4G\/5G macro base station power amplifiers<\/li>\n
    • Doherty PA architectures<\/li>\n
    • Small cell and remote radio head transmitters<\/li>\n
    • Cellular repeaters and boosters<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The RFPA3800 from Qorvo is a high-power GaN MMIC power amplifier designed for cellular infrastructure applications. Operating in the 1.8-2.7 GHz frequency range, it delivers high output power with excellent efficiency for 4G\/5G base station transmit chains. Key Specifications Frequency Range 1.8 to 2.7 GHz Technology GaN on SiC Application Cellular infrastructure PA […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[159],"class_list":["post-8363","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-qorvo"],"acf":{"brief_explanation":"1.8-2.7GHz GaN PA, 28V supply, cellular infrastructure base station","date_code":"","package_case":"QFN (details per specific variant)","in_stock":5817,"datasheet":"https:\/\/www.qorvo.com\/products\/p\/RFPA3800","price":"$75.00 @ 1ku","product_introduction":"The RFPA3800 from Qorvo is a gallium nitride (GaN) on silicon carbide (SiC) monolithic microwave integrated circuit (MMIC) power amplifier designed for cellular infrastructure applications in the 1.8 to 2.7 GHz frequency range. Leveraging the high power density, high breakdown voltage, and excellent thermal conductivity of the GaN\/SiC material system, the RFPA3800 delivers high output power with the efficiency and linearity required for 4G LTE and 5G NR base station transmit chains. The device is optimized for use in Doherty and push-pull amplifier architectures common in macro base station designs, supporting wide signal bandwidths and high peak-to-average power ratio (PAPR) waveforms. The 28 V supply voltage is standard for cellular infrastructure, enabling direct operation from base station PA supply rails.","working_principle":"The RFPA3800 is based on a GaN HEMT (high electron mobility transistor) fabricated on a semi-insulating SiC substrate. The GaN material system creates a two-dimensional electron gas (2DEG) channel at the AlGaN\/GaN heterojunction, providing high electron mobility and carrier density. Under bias, the HEMT amplifies RF signals by modulating the channel conductance through the gate voltage. The GaN-on-SiC platform offers approximately 3-5 times the power density of GaAs MMICs, enabling compact die sizes for a given output power. The SiC substrate provides excellent thermal conductivity (~3.7 W\/cmK) that efficiently conducts waste heat from the active devices to the package and heatsink. The amplifier is designed for deep class AB or class B operation with digital predistortion (DPD) to achieve the high linearity required for OFDM-based 4G\/5G signals.","pin_description":"
      Pin Group<\/th>Function<\/th><\/tr>
      RF Input<\/td>RF signal input port; 50 \u03a9 matched, requires external DC block<\/td><\/tr>
      RF Output \/ Drain<\/td>RF output port; drain bias injected via external bias network<\/td><\/tr>
      Gate Bias<\/td>Gate voltage control for quiescent current setting<\/td><\/tr>
      Drain Bias<\/td>28 V drain supply input (typically via bias-tee on RF output)<\/td><\/tr>
      Ground<\/td>RF ground and thermal path; package base must be soldered to PCB<\/td><\/tr><\/table>","application_scenarios":"
      • 4G\/5G Macro Base Station<\/strong>: Final stage power amplifier in macro cell transmit chains supporting multi-carrier LTE and NR signals<\/li>
      • Doherty PA Architecture<\/strong>: Main or peaking amplifier in asymmetric Doherty configurations for high-efficiency base stations<\/li>
      • Remote Radio Head<\/strong>: Tower-mounted PA module with high power density and thermal efficiency<\/li>
      • Cellular Repeater<\/strong>: High-linearity amplifier for signal rebroadcast in coverage extension applications<\/li>
      • Small Cell Backhaul<\/strong>: Point-to-point microwave link transmitter for small cell backhaul<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Freq Range<\/th>Technology<\/th>Notes<\/th><\/tr>
        RFPA3810<\/td>Qorvo<\/td>1.8-2.7 GHz<\/td>GaN<\/td>Higher power variant<\/td><\/tr>
        QPA2580<\/td>Qorvo<\/td>2.4-4.2 GHz<\/td>GaN<\/td>Higher band, different range<\/td><\/tr>
        CGH40240PP<\/td>Wolfspeed<\/td>DC-6 GHz<\/td>GaN<\/td>Discrete GaN, higher power<\/td><\/tr>
        MAOM-006539<\/td>Macom<\/td>1.8-2.7 GHz<\/td>GaN<\/td>Alternative GaN PA<\/td><\/tr>
        NXP MRF24G300H<\/td>NXP<\/td>2.3-2.7 GHz<\/td>LDMOS<\/td>LDMOS alternative, lower cost<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/8363","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=8363"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/8363\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=8363"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=8363"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=8363"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=8363"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}