The SS34 from onsemi is a 3 A, 40 V Schottky barrier rectifier in an SMA (DO-214AC) surface-mount package. With a low forward voltage drop of 550 mV at 3 A and fast switching capability, it is designed for high-efficiency rectification in switch-mode power supplies, DC-DC converters, and reverse polarity protection applications.<\/p>\n
| Reverse Voltage (VRRM)<\/td>\n | 40 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Average Forward Current (IFAV)<\/td>\n | 3 A<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Forward Voltage (VF @ 3 A)<\/td>\n | 550 mV (max)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Reverse Leakage (IR @ 40 V)<\/td>\n | 500 \u00b5A (max at 25\u00b0C)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Peak Forward Surge (IFSM)<\/td>\n | 80 A<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Temperatura de funcionamiento<\/td>\n | -55\u00b0C to +150\u00b0C<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Paquete<\/td>\n | SMA (DO-214AC)<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The SS34 from onsemi is a 3 A, 40 V Schottky barrier rectifier in an SMA (DO-214AC) surface-mount package. With a low forward voltage drop of 550 mV at 3 A and fast switching capability, it is designed for high-efficiency rectification in switch-mode power supplies, DC-DC converters, and reverse polarity protection applications. Key […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[],"chip_brand":[144],"class_list":["post-8352","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"3A, 40V Schottky rectifier, 550mV VF, SMA package, fast switching","date_code":"","package_case":"SMA (DO-214AC) (5.20 x 2.60 x 2.15 mm)","in_stock":14064,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/SS32-D.PDF","price":"$0.08 @ 1ku","product_introduction":"The SS34 is a 3 A, 40 V Schottky barrier rectifier from onsemi in an SMA (DO-214AC) surface-mount package. As a Schottky device, it features a low forward voltage drop of 550 mV maximum at 3 A and negligible reverse recovery time, resulting in significantly lower switching losses compared to standard PN junction rectifiers. The metal-silicon junction construction provides fast switching performance essential for high-frequency SMPS and DC-DC converter applications. With an 80 A non-repetitive peak forward surge current rating and a -55\u00b0C to +150\u00b0C operating temperature range, the SS34 offers robust transient handling and reliable operation in demanding environments. The SMA package provides a compact footprint with adequate thermal performance for the 3 A current rating. The device is Pb-Free and RoHS compliant.","working_principle":"The SS34 operates using a metal-semiconductor (Schottky) junction rather than a conventional PN junction. Under forward bias, majority carriers (electrons) cross the metal-silicon barrier with low resistance, producing the characteristic low forward voltage drop of approximately 550 mV at rated current. Because Schottky diodes are majority-carrier devices, there is essentially no stored minority carrier charge during conduction, resulting in negligible reverse recovery time and near-zero reverse recovery loss. This makes the SS34 ideal for high-frequency switching applications where recovery losses in PN diodes would be prohibitive. The guard ring structure around the Schottky contact prevents edge breakdown and improves the reverse voltage capability to 40 V. Under reverse bias, the barrier blocks current flow with a maximum leakage of 500 \u00b5A at rated voltage and 25\u00b0C.","pin_description":"
|