{"id":8342,"date":"2026-06-28T12:26:34","date_gmt":"2026-06-28T12:26:34","guid":{"rendered":"https:\/\/materialparts.com\/bas16xv2t1g\/"},"modified":"2026-06-28T12:26:34","modified_gmt":"2026-06-28T12:26:34","slug":"bas16xv2t1g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/bas16xv2t1g\/","title":{"rendered":"BAS16XV2T1G"},"content":{"rendered":"

Productos<\/h2>\n

The BAS16XV2T1G from onsemi is a high-speed switching diode in an ultra-small SOD-523 package. Rated at 100 V reverse voltage and 200 mA continuous forward current, it features a low reverse recovery time of 6 ns and low diode capacitance of 2.0 pF, making it ideal for high-speed switching and general-purpose signal applications in space-constrained designs.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n
Reverse Voltage (VR)<\/td>\n100 V<\/td>\n<\/tr>\n
Forward Current (IF)<\/td>\n200 mA<\/td>\n<\/tr>\n
Forward Voltage (VF @ 10 mA)<\/td>\n855 mV (max)<\/td>\n<\/tr>\n
Reverse Recovery Time (trr)<\/td>\n6.0 ns (max)<\/td>\n<\/tr>\n
Diode Capacitance (CD)<\/td>\n2.0 pF (max)<\/td>\n<\/tr>\n
Reverse Leakage (IR @ 100 V)<\/td>\n1.0 \u00b5A (max)<\/td>\n<\/tr>\n
Peak Forward Surge<\/td>\n500 mA<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n200 mW<\/td>\n<\/tr>\n
Paquete<\/td>\nSOD-523 (CASE 502)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Ultra-small SOD-523 package for space-constrained designs<\/li>\n
  • High-speed switching with 6 ns reverse recovery time<\/li>\n
  • Low capacitance: 2.0 pF at VR = 0 V, 1 MHz<\/li>\n
  • AEC-Q101 qualified (SBAS16XV2 variant)<\/li>\n
  • Pb-Free, Halogen Free, and RoHS compliant<\/li>\n
  • Reflow solderable up to 260\u00b0C<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • High-speed signal switching and routing<\/li>\n
    • Reverse polarity protection in portable devices<\/li>\n
    • Logic-level signal clipping and clamping<\/li>\n
    • ESD protection steering diodes<\/li>\n
    • General-purpose diode functions in mobile and wearable electronics<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The BAS16XV2T1G from onsemi is a high-speed switching diode in an ultra-small SOD-523 package. Rated at 100 V reverse voltage and 200 mA continuous forward current, it features a low reverse recovery time of 6 ns and low diode capacitance of 2.0 pF, making it ideal for high-speed switching and general-purpose signal applications […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[],"chip_brand":[144],"class_list":["post-8342","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"100V, 200mA high-speed switching diode, 6ns trr, SOD-523, Pb-Free","date_code":"","package_case":"SOD-523 (CASE 502) (1.25 x 0.85 x 0.55 mm)","in_stock":11883,"datasheet":"https:\/\/www.onsemi.com\/download\/data-sheet\/pdf\/bas16xv2t1-d.pdf","price":"$0.03 @ 1ku","product_introduction":"The BAS16XV2T1G is a high-speed switching diode from onsemi housed in the ultra-compact SOD-523 (CASE 502) surface-mount package. With a 100 V reverse voltage rating and 200 mA continuous forward current capability, this device is designed for general-purpose switching applications where board space is at a premium. The diode exhibits a maximum reverse recovery time of 6.0 ns and a junction capacitance of just 2.0 pF, ensuring minimal signal distortion in high-speed circuits. Forward voltage is specified at 855 mV maximum at 10 mA. The SOD-523 package measures only 1.25 x 0.85 x 0.55 mm, making it one of the smallest discrete diode packages available. The device is Pb-Free, Halogen Free, and RoHS compliant, with an automotive-qualified SBAS16XV2 variant available for AEC-Q101 applications.","working_principle":"The BAS16XV2T1G operates as a standard PN junction switching diode. Under forward bias, majority carriers cross the junction producing a forward current with a characteristic voltage drop of approximately 715 to 855 mV at 10 mA. Under reverse bias, the depletion region widens blocking current flow up to the 100 V breakdown voltage, with a maximum leakage of 1.0 \u00b5A at full reverse voltage. The fast 6 ns reverse recovery time is achieved through optimized doping profiles and a small junction area, which minimizes stored charge to 45 pC. This low stored charge and the 2.0 pF junction capacitance enable the diode to switch rapidly between conducting and blocking states, making it suitable for high-frequency signal paths where switching speed and low capacitance are critical.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>Cathode<\/td>Negative terminal; marked with bar on package body<\/td><\/tr>
      2<\/td>Anode<\/td>Positive terminal<\/td><\/tr><\/table>

      Package: SOD-523 (CASE 502). The cathode bar marking on the top surface identifies Pin 1. The device marking code is A6.<\/p>","application_scenarios":"

      • High-Speed Signal Switching<\/strong>: Digital logic level steering and signal routing in communication circuits<\/li>
      • Reverse Polarity Protection<\/strong>: Battery-powered portable and wearable devices requiring minimal voltage drop<\/li>
      • Signal Clipping and Clamping<\/strong>: Logic-level waveform shaping and ESD steering networks<\/li>
      • Mixing and Detection<\/strong>: RF signal detection and mixer circuits in receivers<\/li>
      • General-Purpose Diode Functions<\/strong>: Blocking, freewheeling, and bias networks in compact layouts<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>VR<\/th>IF<\/th>trr<\/th>Package<\/th>Notes<\/th><\/tr>
        BAS16-7-F<\/td>Diodes Inc<\/td>100 V<\/td>200 mA<\/td>6 ns<\/td>SOD-323<\/td>Equivalent, larger package<\/td><\/tr>
        1N4148W-7-F<\/td>Diodes Inc<\/td>100 V<\/td>300 mA<\/td>4 ns<\/td>SOD-123<\/td>Higher current, larger package<\/td><\/tr>
        BAS16HT1G<\/td>onsemi<\/td>100 V<\/td>200 mA<\/td>6 ns<\/td>SOT-23<\/td>Same die, different package<\/td><\/tr>
        BAV16W-7-F<\/td>Diodes Inc<\/td>100 V<\/td>200 mA<\/td>5 ns<\/td>SOD-123<\/td>Lower VF alternative<\/td><\/tr>
        BAS21-7-F<\/td>Diodes Inc<\/td>250 V<\/td>200 mA<\/td>50 ns<\/td>SOD-123<\/td>Higher voltage rating<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/8342","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=8342"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/8342\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=8342"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=8342"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=8342"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=8342"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}