{"id":7944,"date":"2026-06-28T06:01:44","date_gmt":"2026-06-28T06:01:44","guid":{"rendered":"https:\/\/materialparts.com\/irf540npbf-3\/"},"modified":"2026-06-28T11:37:59","modified_gmt":"2026-06-28T11:37:59","slug":"irf540npbf-3","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/irf540npbf-3\/","title":{"rendered":"IRF540NPBF"},"content":{"rendered":"

Productos<\/h2>\n

The IRF540NPBF from Infineon Technologies is a 100V N-channel HEXFET power MOSFET with 44m\u03a9 on-resistance, 33A continuous drain current, and 130W power dissipation in a TO-220 package \u2014 a versatile workhorse for medium-voltage switching applications.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Tipo<\/td>\nN-Channel Enhancement MOSFET<\/td>\n<\/tr>\n
Drain-Source Voltage (VDSS)<\/td>\n100V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n33A @ TC=25\u00b0C, 23A @ TC=100\u00b0C<\/td>\n<\/tr>\n
Pulsed Drain Current (IDM)<\/td>\n110A<\/td>\n<\/tr>\n
On-Resistance (RDS(on))<\/td>\n44m\u03a9 @ VGS=10V, ID=16A<\/td>\n<\/tr>\n
Gate Threshold Voltage (VGS(th))<\/td>\n2.0V to 4.0V (3.0V typical)<\/td>\n<\/tr>\n
Forward Transconductance (gfs)<\/td>\n21 S typical<\/td>\n<\/tr>\n
Total Gate Charge (Qg)<\/td>\n71nC typical @ VDS=80V, VGS=10V<\/td>\n<\/tr>\n
Miller Charge (Qgd)<\/td>\n21nC typical<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n1960pF @ VDS=25V<\/td>\n<\/tr>\n
Turn-On Delay Time<\/td>\n11ns typical<\/td>\n<\/tr>\n
Turn-Off Delay Time<\/td>\n39ns typical<\/td>\n<\/tr>\n
Body Diode Forward Voltage (VSD)<\/td>\n1.2V typical @ IF=16A<\/td>\n<\/tr>\n
Reverse Recovery Time (trr)<\/td>\n170ns typical<\/td>\n<\/tr>\n
Energ\u00eda de avalancha (EAS)<\/td>\n185mJ (single pulse)<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n130W @ TC=25\u00b0C<\/td>\n<\/tr>\n
Thermal Resistance (\u03b8JC)<\/td>\n1.15\u00b0C\/W<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n
Paquete<\/td>\nTO-220AB (through-hole, tab=Drain)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Advanced HEXFET technology with ultra-low RDS(on)<\/li>\n
  • 100V drain-source rating for 12V-48V systems<\/li>\n
  • Fully avalanche rated<\/li>\n
  • Fast switching speed<\/li>\n
  • 175\u00b0C maximum junction temperature<\/li>\n
  • Dynamic dv\/dt rating<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Convertidores CC-CC<\/li>\n
    • Motor drive (H-bridge)<\/li>\n
    • Load switching<\/li>\n
    • Etapa de salida del amplificador de audio<\/li>\n
    • Solar charge controller<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRF540NPBF from Infineon Technologies is a 100V N-channel HEXFET power MOSFET with 44m\u03a9 on-resistance, 33A continuous drain current, and 130W power dissipation in a TO-220 package \u2014 a versatile workhorse for medium-voltage switching applications. Key Specifications Type N-Channel Enhancement MOSFET Drain-Source Voltage (VDSS) 100V Continuous Drain Current (ID) 33A @ TC=25\u00b0C, 23A […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[173],"class_list":["post-7944","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-infineon"],"acf":{"brief_explanation":"100V 33A N-ch MOSFET, 44m\u03a9, TO-220, HEXFET","date_code":"","package_case":"TO-220AB (15.6 x 10.6 x 4.6mm, through-hole, tab=Drain)","in_stock":58182,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf540npbf.pdf?fileId=5546d462533600a401535611d92a1dca","price":"$0.47 @ 1ku","product_introduction":"The IRF540NPBF from Infineon Technologies (formerly International Rectifier) is one of the most widely used N-channel power MOSFETs in the 100V class. With 44m\u03a9 on-resistance at VGS=10V and 33A continuous drain current, it offers an excellent balance of voltage rating, current handling, and low conduction loss. The HEXFET (HEXagonal FET) architecture uses a hexagonal cell layout to maximize the channel width per unit silicon area, achieving low RDS(on) in a compact die. The 100V drain-source rating provides comfortable headroom for 12V, 24V, and 48V systems, where transients and inductive spikes can momentarily exceed the nominal supply. The gate threshold voltage of 2-4V means the device begins to turn on at logic levels but requires 10V for full enhancement (minimum RDS(on)). For 5V logic-level drive, the IRLZ44N (logic-level version) is preferred. The PBF suffix denotes the lead-free (Pb-free) version. The device is fully avalanche rated, meaning it can survive unclamped inductive switching events up to 185mJ without damage.","working_principle":"The IRF540NPBF is an N-channel enhancement-mode MOSFET. When VGS exceeds the threshold (2-4V), an inversion layer forms beneath the gate oxide, creating a conductive channel between drain and source. The channel resistance (RDS(on)) decreases as VGS increases: at VGS=4.5V, RDS(on) is typically 70-80m\u03a9; at VGS=10V, it drops to 44m\u03a9. For minimum conduction loss, VGS should be 10V or higher. When VGS falls below the threshold, the channel disappears and the MOSFET is OFF, blocking up to 100V between drain and source. The internal body diode (from source to drain) conducts when VDS goes negative, which is useful in half-bridge and H-bridge configurations where the diode carries current during the dead time between switching. However, the body diode is relatively slow (trr=170ns), which can cause losses in high-frequency switching applications. The 71nC total gate charge means the gate driver must supply this charge during turn-on and absorb it during turn-off; a gate driver capable of 1A can switch the MOSFET in approximately 70ns. The turn-on delay (11ns) plus rise time (35ns) give a total turn-on time of ~46ns; turn-off delay (39ns) plus fall time (35ns) give ~74ns turn-off time. For switching frequencies above 100kHz, these transition times contribute significant switching losses, and a MOSFET with lower Qg may be more appropriate.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Description<\/th><\/tr>\n
      1<\/td>Gate<\/td>Input<\/td>Gate control terminal. Apply VGS > 4V (10V recommended for lowest RDS(on) of 44m\u03a9) to fully enhance the MOSFET. Gate charge is 71nC typical. Maximum VGS rating is \u00b120V. Use a gate resistor (10-47\u03a9) to control dv\/dt and reduce ringing.<\/td><\/tr>\n
      2<\/td>Drain<\/td>Power Output<\/td>Drain terminal connected to the load. Rated for 100V VDS and 33A continuous drain current at TC=25\u00b0C. The tab of TO-220 package is electrically connected to Drain. On-resistance is 44m\u03a9 typ at VGS=10V, ID=17A.<\/td><\/tr>\n
      3<\/td>Source<\/td>Power Output<\/td>Source terminal typically connected to ground for low-side switching. Internal body diode has forward voltage VSD \u2248 1.4V and reverse recovery time trr \u2248 340ns. Do not rely on body diode for high-frequency freewheeling.<\/td><\/tr>\n<\/table>\n

      IRF540NPBF pin assignment (TO-220-3, front view, pins down): Pin 1 (left) = Gate, Pin 2 (center) = Drain\/Tab, Pin 3 (right) = Source. The tab is connected to Drain (Pin 2). For high-current applications, mount on heatsink with thermal compound. At ID=20A and VGS=10V, power dissipation can reach 2.5W from RDS(on) alone. For logic-level gate drive (5V), consider IRL540N which is optimized for 5V VGS operation.<\/p>","application_scenarios":"

        \n
      • Low-Side Switch:<\/strong> Source=GND; Gate from MCU through gate driver (10V); Drain to load; 12V\/24V motor, heater, or lamp control<\/li>\n
      • H-Bridge Motor:<\/strong> 4\u00d7 IRF540N; 2 high-side + 2 low-side; 10V gate drive; bidirectional DC motor control<\/li>\n
      • Buck Converter:<\/strong> IRF540N as high-side switch; 100kHz max; Schottky freewheel diode; 12V to 5V at 10A<\/li>\n
      • Audio Amp:<\/strong> IRF540N in push-pull Class-D output; 100V rating for \u00b148V rails; gate driver for PWM input<\/li>\n
      • Solar Controller:<\/strong> IRF540N as series pass element; PWM controls charge current; 100V rating for 48V battery banks<\/li>\n<\/ul>","alternative_models":"\n
        Model<\/th>Manufacturer<\/th>Key Difference<\/th>Package<\/th>Specs<\/th><\/tr>\n
        IRLZ44NPBF<\/td>Infineon<\/td>Logic-level (VGS=5V for full enhancement), 55V, 47A, TO-220<\/td>-<\/td>-<\/td><\/tr>\n
        IRF3205PBF<\/td>Infineon<\/td>8m\u03a9 RDS(on), 55V, 110A, much lower resistance, TO-220<\/td>-<\/td>-<\/td><\/tr>\n
        IRF640NPBF<\/td>Infineon<\/td>200V version, 18A, 180m\u03a9, higher voltage, TO-220<\/td>-<\/td>-<\/td><\/tr>\n
        IRF540NS<\/td>Infineon<\/td>Same in D2PAK (TO-263) surface-mount<\/td>-<\/td>-<\/td><\/tr>\n
        FQP30N06L<\/td>onsemi<\/td>Logic-level, 60V, 30A, 35m\u03a9 @ 5V, TO-220<\/td>-<\/td>-<\/td><\/tr>\n<\/table>\n

        IRF540NPBF is a 100V\/33A N-channel MOSFET from Infineon in TO-220 with 44m\u03a9 RDS(on). The IRL540N provides logic-level 100V\/28A for 5V gate drive. The IRF540ZPBF offers lower 23m\u03a9 in the same package. The FQP30N06L provides 60V\/30A with 35m\u03a9 and logic-level drive from onsemi. The IRF640N offers 200V\/18A for higher voltage applications. For surface-mount, IRF540NSPBF provides the same in D2PAK. The STD70N02 from ST offers 24V\/70A with 7.5m\u03a9 for low-voltage high-current switching.<\/p>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7944","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=7944"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7944\/revisions"}],"predecessor-version":[{"id":8228,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7944\/revisions\/8228"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=7944"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=7944"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=7944"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=7944"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}