{"id":7908,"date":"2026-06-28T04:21:21","date_gmt":"2026-06-28T04:21:21","guid":{"rendered":"https:\/\/materialparts.com\/bss138-7-f-2\/"},"modified":"2026-06-28T11:38:58","modified_gmt":"2026-06-28T11:38:58","slug":"bss138-7-f-2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/bss138-7-f-2\/","title":{"rendered":"BSS138-7-F"},"content":{"rendered":"

Productos<\/h2>\n

The BSS138-7-F is a 50V N-channel logic-level enhancement-mode MOSFET from Diodes Incorporated with 200mA drain current, 3.5\u03a9 RDS(on), and low gate threshold (1.5V max) in a SOT-23-3 package.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
VDS (Drain-Source Voltage)<\/td>\n50V<\/td>\n<\/tr>\n
ID (Continuous Drain Current)<\/td>\n200mA @ TA=25\u00b0C<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n3.5\u03a9 @ VGS=10V, ID=220mA<\/td>\n<\/tr>\n
RDS(on) Max (4.5V)<\/td>\n6.0\u03a9 @ VGS=4.5V<\/td>\n<\/tr>\n
VGS(th) (Gate Threshold)<\/td>\n0.8V to 1.5V @ ID=1mA<\/td>\n<\/tr>\n
VGS (Gate-Source Voltage)<\/td>\n\u00b120V max<\/td>\n<\/tr>\n
Qg (Total Gate Charge)<\/td>\n1.7nC typical @ VGS=10V<\/td>\n<\/tr>\n
Ciss (Input Capacitance)<\/td>\n27pF typical @ VDS=25V<\/td>\n<\/tr>\n
gfs (Forward Transconductance)<\/td>\n100mS typical<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n360mW @ TA=25\u00b0C<\/td>\n<\/tr>\n
R\u03b8JA<\/td>\n350\u00b0C\/W<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to +150\u00b0C<\/td>\n<\/tr>\n
Paquete<\/td>\nSOT-23-3 (2.9 x 1.3mm, surface mount)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • 50V N-channel enhancement-mode MOSFET<\/li>\n
  • Low gate threshold voltage: 1.5V max<\/li>\n
  • Directly drivable from 2.5V\/3.3V MCU GPIO<\/li>\n
  • Low on-resistance: 3.5\u03a9 max at VGS=10V<\/li>\n
  • Fast switching: 2.5ns turn-on delay typical<\/li>\n
  • Pb-free and halogen-free<\/li>\n
  • Industry-standard SOT-23-3 footprint<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • I2C\/SPI level shifting (bidirectional)<\/li>\n
    • Low-voltage logic switching<\/li>\n
    • Load switch for battery-powered devices<\/li>\n
    • Small servo motor control<\/li>\n
    • MOSFET gate driver pre-driver<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The BSS138-7-F is a 50V N-channel logic-level enhancement-mode MOSFET from Diodes Incorporated with 200mA drain current, 3.5\u03a9 RDS(on), and low gate threshold (1.5V max) in a SOT-23-3 package. Key Specifications VDS (Drain-Source Voltage) 50V ID (Continuous Drain Current) 200mA @ TA=25\u00b0C RDS(on) Max 3.5\u03a9 @ VGS=10V, ID=220mA RDS(on) Max (4.5V) 6.0\u03a9 @ VGS=4.5V […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[21,13],"tags":[],"chip_brand":[173],"class_list":["post-7908","post","type-post","status-publish","format-standard","hentry","category-audio-ics","category-integrated-circuits-ics","chip_brand-infineon"],"acf":{"brief_explanation":"50V N-ch MOSFET, 200mA, 3.5\u03a9 Rds, low Vth 1.5V, SOT-23-3","date_code":"","package_case":"SOT-23-3 (TO-236-3, 2.9 x 1.3 x 1.0mm, surface mount)","in_stock":7357,"datasheet":"https:\/\/www.diodes.com\/assets\/Datasheets\/ds30154.pdf","price":"$0.04 @ 3ku","product_introduction":"The BSS138-7-F from Diodes Incorporated is a 50V N-channel logic-level enhancement-mode MOSFET specifically designed for low-voltage switching applications. The key differentiator is the low gate threshold voltage (0.8V to 1.5V), which allows the device to be fully turned on by 3.3V or even 2.5V MCU GPIO pins without level translation. At VGS=4.5V, RDS(on) is 6\u03a9 max, and at VGS=10V, it drops to 3.5\u03a9 max. The 200mA continuous current rating covers typical I2C pull-up, LED indicator, and small relay loads. The SOT-23-3 package occupies minimal board area. The BSS138 is the industry-standard choice for bidirectional I2C level-shifter circuits, where two MOSFETs and pull-up resistors translate between 3.3V and 5V logic domains. The -7-F suffix denotes tape-and-reel packaging with Pb-free finish.","working_principle":"The BSS138-7-F operates as an enhancement-mode N-channel MOSFET. The low gate threshold voltage (0.8V typical, 1.5V max) means the channel begins to form at very low VGS. At VGS = 2.5V (low-voltage MCU output), the device is partially enhanced and can pass tens of milliamps with moderate RDS(on). At VGS = 3.3V, the device is more fully enhanced, and at VGS = 5V or 10V, it is fully enhanced with minimum RDS(on). The most common application is the bidirectional I2C level shifter: two BSS138 MOSFETs connect a 3.3V I2C bus to a 5V I2C bus. The gate is tied to the lower voltage (3.3V), and each side has pull-up resistors to its respective supply. When neither side pulls the line LOW, both FETs are off (VGS \u2248 0V since source = gate voltage). When the 3.3V side pulls LOW, the MOSFET's body diode conducts, pulling the 5V side LOW through the channel. When the 5V side pulls LOW, the VGS exceeds the threshold (3.3V gate - ~0V drain), the MOSFET turns on, and the 3.3V side is pulled LOW. This bidirectional translation works without any direction control signal.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Description<\/th><\/tr>\n
      1<\/td>Gate<\/td>Input<\/td>Gate control terminal. Low-threshold N-channel MOSFET with VGS(th) = 0.8-1.5V, making it suitable for 2.5V-3.3V logic level shifting. The K suffix version includes ESD protection on the gate. Gate leakage current is typically 10nA. Maximum VGS = \u00b120V.<\/td><\/tr>\n
      2<\/td>Source<\/td>Power Output<\/td>Source terminal. In level-shifting applications, connects to the lower-voltage side (e.g., 3.3V logic). Internal body diode conducts from Source to Drain. Continuous drain current is 220mA at TC=25\u00b0C. On-resistance RDS(on) = 3.5\u03a9 max at VGS=10V, ID=50mA.<\/td><\/tr>\n
      3<\/td>Drain<\/td>Power Output<\/td>Drain terminal. In level-shifting applications, connects to the higher-voltage side (e.g., 5V logic) through a pull-up resistor. Maximum VDS = 50V. Open-drain configuration allows bidirectional level shifting between two voltage domains with a single device and two pull-up resistors.<\/td><\/tr>\n<\/table>\n

      BSS138K-7 pin assignment (SOT-23-3, top view): Pin 1 (left) = Gate, Pin 2 (center, tab) = Source, Pin 3 (right) = Drain. The K suffix indicates ESD-protected gate variant. This is the industry-standard MOSFET for I2C\/SPI bidirectional level shifting between 1.8V\/2.5V\/3.3V\/5V logic domains. For higher current switching, SI2302CDS offers 2.2A with 62m\u03a9 RDS(on) in the same SOT-23-3 package.<\/p>","application_scenarios":"

        \n
      • I2C Level Shift:<\/strong> Two BSS138 + 4 pull-ups create bidirectional 3.3V-to-5V I2C translator; low Vth ensures conduction at 3.3V<\/li>\n
      • 2.5V GPIO Switch:<\/strong> Low 1.5V threshold allows 2.5V MCU to drive gate; switches <50mA loads directly<\/li>\n
      • Battery Load Switch:<\/strong> 0.5\u00b5A max gate leakage preserves battery; EN pin of MCU toggles VGS<\/li>\n
      • Servo Control:<\/strong> 200mA rating drives small hobby servo signal lines; gate from MCU PWM pin<\/li>\n
      • Gate Pre-Driver:<\/strong> Fast 2.5ns turn-on drives larger power MOSFET gates; reduces MCU drive requirement<\/li>\n<\/ul>","alternative_models":"\n
        Model<\/th>Manufacturer<\/th>Key Difference<\/th>Package<\/th>Specs<\/th><\/tr>\n
        BSS138LT1G<\/td>onsemi<\/td>Same function, onsemi version, SOT-23-3<\/td>-<\/td>-<\/td><\/tr>\n
        2N7002K-7<\/td>Diodes Inc<\/td>60V\/380mA, higher Vth (2.5V), ESD protected<\/td>-<\/td>-<\/td><\/tr>\n
        BSS138PW<\/td>Nexperia<\/td>Same in TSSOP-6 (SOT-363) smaller package<\/td>-<\/td>-<\/td><\/tr>\n
        2N7002ET1G<\/td>onsemi<\/td>60V\/300mA, higher voltage, similar low-Vth<\/td>-<\/td>-<\/td><\/tr>\n
        NTR4003NT1G<\/td>onsemi<\/td>30V\/500mA, lower Rds, logic-level, SOT-23-3<\/td>-<\/td>-<\/td><\/tr>\n<\/table>\n

        BSS138-7-F is a 50V\/220mA N-channel MOSFET from onsemi in SOT-23-3 with 3.5\u03a9 RDS(on). The BSS138K-7 provides ESD-protected gate. The 2N7002K-7 from onsemi offers 60V\/300mA with 1.2\u03a9 and ESD protection. The SI2302CDS from Vishay provides 20V\/2.2A with 62m\u03a9 for higher current. The DMN2075U from Diodes Inc offers 20V\/750mA with 90m\u03a9. For level-shifting, BSS138 remains the industry standard for I2C bidirectional shifting. The AO3400A from Alpha & Omega provides 30V\/5A with 26m\u03a9 in the same SOT-23.<\/p>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7908","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=7908"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7908\/revisions"}],"predecessor-version":[{"id":8245,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7908\/revisions\/8245"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=7908"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=7908"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=7908"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=7908"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}