{"id":7806,"date":"2026-06-27T03:35:08","date_gmt":"2026-06-27T03:35:08","guid":{"rendered":"https:\/\/materialparts.com\/pmv250epear-2\/"},"modified":"2026-06-27T03:35:08","modified_gmt":"2026-06-27T03:35:08","slug":"pmv250epear-2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/pmv250epear-2\/","title":{"rendered":"PMV250EPEAR"},"content":{"rendered":"

Productos<\/h2>\n

The PMV250EPEAR is a P-channel enhancement mode trench MOSFET from Nexperia rated at -40V VDSS, -1.5A ID, and 240 mOhm RDS(ON) max in a compact SOT-23-3 surface-mount package. AEC-Q101 qualified for automotive applications.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
Channel Type<\/td>\nP-Channel Enhancement<\/td>\n<\/tr>\n
Drain-Source Voltage (VDSS)<\/td>\n-40 V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n-1.5 A (at TA=25\u00b0C)<\/td>\n<\/tr>\n
RDS(ON) max<\/td>\n240 mOhm @ VGS=-10V<\/td>\n<\/tr>\n
Gate Threshold Voltage<\/td>\n-1.0 V to -2.5 V<\/td>\n<\/tr>\n
Total Gate Charge (Qg)<\/td>\n4.7 nC typical<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n450 pF typical<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n480 mW (at TA=25\u00b0C), 6.25 W (at TC=25\u00b0C)<\/td>\n<\/tr>\n
ESD Protection<\/td>\n> 1 kV HBM<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to +150\u00b0C (Tj)<\/td>\n<\/tr>\n
Paquete<\/td>\nSOT-23-3 (TO-236AB)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • P-channel trench MOSFET technology<\/li>\n
  • Logic-level gate drive compatible<\/li>\n
  • Very fast switching speed<\/li>\n
  • AEC-Q101 qualified for automotive<\/li>\n
  • > 1 kV ESD protection<\/li>\n
  • Compact SOT-23 footprint<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • High-side load switches<\/li>\n
    • Relay drivers<\/li>\n
    • High-speed line drivers<\/li>\n
    • Battery-powered systems<\/li>\n
    • Automotive electronics<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The PMV250EPEAR is a P-channel enhancement mode trench MOSFET from Nexperia rated at -40V VDSS, -1.5A ID, and 240 mOhm RDS(ON) max in a compact SOT-23-3 surface-mount package. AEC-Q101 qualified for automotive applications. Key Specifications Channel Type P-Channel Enhancement Drain-Source Voltage (VDSS) -40 V Continuous Drain Current (ID) -1.5 A (at TA=25\u00b0C) RDS(ON) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[168],"class_list":["post-7806","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-nxp"],"acf":{"brief_explanation":"P-ch MOSFET, -40V, -1.5A, 240mOhm, AEC-Q101, SOT-23-3","date_code":"","package_case":"SOT-23-3 \/ TO-236AB (2.9 x 1.3 x 1.0 mm)","in_stock":11250,"datasheet":"https:\/\/assets.nexperia.com\/documents\/data-sheet\/PMV250EPEA.pdf","price":"$0.11 @ 1ku","product_introduction":"The PMV250EPEAR is a P-channel enhancement mode trench MOSFET from Nexperia rated at -40V drain-source voltage and -1.5A continuous drain current in a compact SOT-23-3 surface-mount package. Using trench MOSFET technology, it achieves 240 mOhm maximum RDS(ON) at VGS=-10V with a low gate charge of 4.7 nC for efficient switching. The device features logic-level gate drive compatibility (threshold -1.0V to -2.5V), very fast switching, and over 1 kV ESD protection. AEC-Q101 qualification makes it suitable for automotive applications. The compact SOT-23-3 package is ideal for space-constrained designs requiring high-side load switching.","working_principle":"The PMV250EPEAR uses Nexperia trench MOSFET technology where vertical trenches are etched into the silicon and lined with gate oxide and polysilicon. When VGS is pulled below the source (more negative than the threshold), an inversion layer forms on the trench sidewalls, connecting the P+ source to the P-epi drain region and allowing current flow from source to drain. The trench structure provides higher cell density and lower RDS(ON) per die area compared to planar MOSFETs. As a P-channel device, it simplifies high-side switch design because no charge pump or bootstrap is needed. The low gate charge (4.7 nC) minimizes switching energy and allows direct drive from 3.3V or 5V logic. The integrated ESD protection diode on the gate protects against handling damage.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Description<\/th><\/tr>\n
      1<\/td>Gate<\/td>Input<\/td>Gate control terminal<\/td><\/tr>\n
      2<\/td>Source<\/td>Power<\/td>Source terminal (connects to supply in high-side config)<\/td><\/tr>\n
      3<\/td>Drain<\/td>Power<\/td>Drain terminal (connects to load)<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • High-Side Load Switch:<\/strong> P-channel eliminates charge pump; logic-level gate drive from MCU GPIO for battery power routing<\/li>\n
      • Automotive Electronics:<\/strong> AEC-Q101 qualification ensures reliability in vehicle body controllers and lighting modules<\/li>\n
      • Relay Drivers:<\/strong> 1.5A current capability drives small relays and solenoids from logic-level control signals<\/li>\n
      • Battery-Powered Systems:<\/strong> 240 mOhm RDS(ON) and 4.7 nC Qg minimize power loss in battery switch circuits<\/li>\n
      • Space-Constrained Designs:<\/strong> SOT-23-3 footprint occupies minimal PCB area in portable and wearable electronics<\/li>\n<\/ul>","alternative_models":"\n
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>\n
        PMV50EPEAR<\/td>Nexperia<\/td>-30V, -4.2A, 45 mOhm, higher current<\/td><\/tr>\n
        SI2301DS-T1-GE3<\/td>Vishay<\/td>-20V, -2.2A, 100 mOhm, SOT-23<\/td><\/tr>\n
        BSS84LT1G<\/td>onsemi<\/td>-50V, -0.13A, 10 Ohm, SOT-23<\/td><\/tr>\n
        DMP2035U-7<\/td>Diodes Inc<\/td>-20V, -2.8A, 70 mOhm, SOT-23<\/td><\/tr>\n
        IRLML6402TRPBF<\/td>Infineon<\/td>-20V, -3.7A, 65 mOhm, SOT-23<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7806","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=7806"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7806\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=7806"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=7806"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=7806"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=7806"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}