{"id":7803,"date":"2026-06-27T03:26:35","date_gmt":"2026-06-27T03:26:35","guid":{"rendered":"https:\/\/materialparts.com\/fdmc2523p-2\/"},"modified":"2026-06-27T03:26:35","modified_gmt":"2026-06-27T03:26:35","slug":"fdmc2523p-2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/fdmc2523p-2\/","title":{"rendered":"FDMC2523P"},"content":{"rendered":"

Productos<\/h2>\n

The FDMC2523P is a P-channel enhancement mode power trench MOSFET from onsemi with -60V VDSS, -6A ID, and 120 m\u03a9 RDS(ON) max at VGS=-10V in a compact Power56 (DPAK-5) surface-mount package.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
Channel Type<\/td>\nP-Channel Enhancement<\/td>\n<\/tr>\n
Drain-Source Voltage (VDSS)<\/td>\n-60 V<\/td>\n<\/tr>\n
Continuous Drain Current<\/td>\n-6 A (at TC=25\u00b0C)<\/td>\n<\/tr>\n
RDS(ON) max<\/td>\n120 m\u03a9 @ VGS=-10V<\/td>\n<\/tr>\n
RDS(ON) max<\/td>\n180 m\u03a9 @ VGS=-4.5V<\/td>\n<\/tr>\n
Gate Threshold Voltage<\/td>\n-1.0 V to -2.5 V<\/td>\n<\/tr>\n
Total Gate Charge<\/td>\n12 nC typical<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n2.5 W (at TA=25\u00b0C)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to +150\u00b0C (Tj)<\/td>\n<\/tr>\n
Paquete<\/td>\nPower56 \/ DPAK-5<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • P-channel power trench MOSFET<\/li>\n
  • Low RDS(ON): 120 m\u03a9 @ VGS=-10V<\/li>\n
  • 60V drain-source voltage rating<\/li>\n
  • 6A continuous drain current<\/li>\n
  • Low gate charge: 12 nC typical<\/li>\n
  • Compact Power56 (DPAK-5) surface-mount package<\/li>\n
  • Logic-level gate drive compatible<\/li>\n
  • 100% avalanche tested<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Load switches and power management<\/li>\n
    • Battery protection circuits<\/li>\n
    • Reverse polarity protection<\/li>\n
    • DC-DC converters (high-side switch)<\/li>\n
    • Motor and solenoid drives<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The FDMC2523P is a P-channel enhancement mode power trench MOSFET from onsemi with -60V VDSS, -6A ID, and 120 m\u03a9 RDS(ON) max at VGS=-10V in a compact Power56 (DPAK-5) surface-mount package. Key Specifications Channel Type P-Channel Enhancement Drain-Source Voltage (VDSS) -60 V Continuous Drain Current -6 A (at TC=25\u00b0C) RDS(ON) max 120 m\u03a9 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[54,13],"tags":[],"chip_brand":[144],"class_list":["post-7803","post","type-post","status-publish","format-standard","hentry","category-diodes","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"P-ch MOSFET, -60V, -6A, 120mOhm @-10V, Power56 DPAK-5","date_code":"","package_case":"Power56 \/ DPAK-5 (6.5 x 5.0 x 2.3 mm)","in_stock":12662,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/fdmc2523p-d.pdf","price":"$0.52 @ 1ku","product_introduction":"The FDMC2523P is a P-channel enhancement mode power trench MOSFET from onsemi designed for low-voltage power management applications. Using trench technology, it achieves low on-resistance of 120 m\u03a9 at VGS=-10V while maintaining low gate charge of 12 nC for efficient switching. The -60V drain-source rating and -6A continuous current make it suitable for high-side load switching, battery protection, and DC-DC converter applications. The compact Power56 (DPAK-5) package provides good thermal performance in a surface-mount footprint. Logic-level gate drive capability allows direct drive from 3.3V or 5V microcontroller GPIO pins.","working_principle":"The FDMC2523P is a P-channel MOSFET where current flows from source to drain when the gate voltage is pulled below the source (negative VGS). The trench MOSFET structure uses vertical trenches etched into the silicon with gate oxide and polysilicon filling, creating a channel on the trench sidewalls. This provides higher cell density and lower RDS(ON) than planar structures. When VGS exceeds the threshold (more negative than -1.0V to -2.5V), an inversion layer forms along the trench sidewalls, connecting the P+ source to the P-epi drain region and allowing current flow. The low gate charge (12 nC) minimizes the energy required to switch the device, reducing driver power dissipation. As a P-channel device, it can be used as a high-side switch without the charge pump or bootstrap circuit required by N-channel MOSFETs.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Description<\/th><\/tr>\n
      1<\/td>Source<\/td>Power<\/td>Source terminal (connected to VIN in high-side config)<\/td><\/tr>\n
      2<\/td>Drain<\/td>Power<\/td>Drain terminal (connected to load)<\/td><\/tr>\n
      3<\/td>Gate<\/td>Input<\/td>Gate control terminal<\/td><\/tr>\n
      4<\/td>Source<\/td>Power<\/td>Source terminal (mirror)<\/td><\/tr>\n
      5<\/td>Drain<\/td>Power<\/td>Drain terminal (mirror)<\/td><\/tr>\n
      Tab<\/td>Drain<\/td>Power<\/td>Thermal pad connected to drain<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • High-Side Load Switch:<\/strong> P-channel eliminates charge pump; 120 m\u03a9 RDS(ON) minimizes voltage drop at 6A loads<\/li>\n
      • Battery Protection:<\/strong> -60V rating provides margin for 48V battery systems; low RDS(ON) extends battery life<\/li>\n
      • Reverse Polarity Protection:<\/strong> Gate tied to ground, source to supply \u2014 blocks reverse current automatically<\/li>\n
      • DC-DC Converters:<\/strong> Low gate charge (12 nC) enables efficient high-frequency buck\/boost switching<\/li>\n
      • Power Routing:<\/strong> Logic-level gate drive from 4.5V MCU GPIO for battery-powered power path management<\/li>\n<\/ul>","alternative_models":"\n
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>\n
        FDMC2583P<\/td>onsemi<\/td>-60V, -8.2A, 78 m\u03a9, higher current<\/td><\/tr>\n
        FDS6575<\/td>onsemi<\/td>-30V, -12A, 18 m\u03a9, lower voltage<\/td><\/tr>\n
        IRF9Z34NPBF<\/td>Infineon<\/td>-60V, -5.5A, 140 m\u03a9, DPAK-3<\/td><\/tr>\n
        SI2333DS-T1-GE3<\/td>Vishay<\/td>-30V, -4.1A, 38 m\u03a9, SOT-23<\/td><\/tr>\n
        AOD4185<\/td>Alpha & Omega<\/td>-40V, -10A, 28 m\u03a9, DPAK<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7803","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=7803"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7803\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=7803"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=7803"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=7803"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=7803"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}