The S1B-E3\/61T from Vishay is a 1A, 100V general-purpose silicon rectifier diode in SMA (DO-214AC) surface-mount package with low forward voltage drop.<\/p>\n
| Repetitive Reverse Voltage (VRRM)<\/td>\n | 100 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Average Rectified Current (IO)<\/td>\n | 1 A<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Forward Voltage (VF)<\/td>\n | 0.90V typical @ IF=1A<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Reverse Current (IR)<\/td>\n | 5 uA max @ VR=100V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Peak Forward Surge Current (IFSM)<\/td>\n | 30 A (8.3ms single half-sine)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Reverse Recovery Time (trr)<\/td>\n | 2 us typical<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Junction Temperature Range<\/td>\n | -55 to +150 C<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Paquete<\/td>\n | SMA (DO-214AC)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Resistencia t\u00e9rmica (RthJA)<\/td>\n | 80 C\/W typical<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The S1B-E3\/61T from Vishay is a 1A, 100V general-purpose silicon rectifier diode in SMA (DO-214AC) surface-mount package with low forward voltage drop. Key Specifications Repetitive Reverse Voltage (VRRM) 100 V Average Rectified Current (IO) 1 A Forward Voltage (VF) 0.90V typical @ IF=1A Reverse Current (IR) 5 uA max @ VR=100V Peak Forward […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[182],"class_list":["post-7561","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-onsemi"],"acf":{"brief_explanation":"1A 100V Si rectifier, SMA, low VF, general purpose","date_code":"","package_case":"SMA \/ DO-214AC (5.2 x 2.6 x 2.2 mm)","in_stock":50000,"datasheet":"https:\/\/www.vishay.com\/docs\/88692\/s1b.pdf","price":"$0.04 @ 1ku","product_introduction":"The S1B-E3\/61T from Vishay is a 1A, 100V general-purpose silicon rectifier diode in SMA (DO-214AC) surface-mount package. The device features 0.90V typical forward voltage drop at 1A, 5uA maximum reverse leakage at 100V, and 30A peak forward surge current rating. The low forward voltage drop minimizes power dissipation in rectification applications. The SMA package provides a compact footprint with good thermal characteristics. The E3\/61T suffix denotes lead-free and halogen-free construction with tape and reel packaging.","working_principle":"The S1B-E3\/61T operates as a standard P-N junction rectifier diode. (1) In forward bias (anode positive relative to cathode), the P-N junction conducts when the applied voltage exceeds the barrier potential (approximately 0.7V for silicon). Current flows from anode to cathode with a forward voltage drop of 0.90V typical at 1A. The low forward voltage minimizes power dissipation (P = VF x IF = 0.9W at 1A) and improves rectification efficiency. (2) In reverse bias (cathode positive), the P-N junction blocks current flow up to the 100V repetitive reverse voltage rating. The reverse leakage current is maintained below 5uA at rated voltage, ensuring minimal standby power loss. The avalanche breakdown above 100V provides a safe failure mode. (3) The 2us reverse recovery time limits the switching speed for high-frequency applications but is adequate for line-frequency rectification (50\/60Hz) and low-frequency DC-DC converters. The 30A surge current rating protects against inrush current during initial power application.","pin_description":"
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