{"id":7479,"date":"2026-06-24T07:28:30","date_gmt":"2026-06-24T07:28:30","guid":{"rendered":"https:\/\/materialparts.com\/irfb4332pbf\/"},"modified":"2026-06-24T07:28:30","modified_gmt":"2026-06-24T07:28:30","slug":"irfb4332pbf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/irfb4332pbf\/","title":{"rendered":"IRFB4332PBF"},"content":{"rendered":"

Productos<\/h2>\n

The IRFB4332PBF from Infineon Technologies is an N-channel power MOSFET rated at 250V, 60A with 29mOhm on-resistance. Designed for PDP sustain, energy recovery, and pass switch applications, it features 175C maximum junction temperature and high repetitive peak current capability in a TO-220AB package.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
Tipo<\/td>\nN-Channel<\/td>\n<\/tr>\n
VDS<\/td>\n250 V<\/td>\n<\/tr>\n
ID (continuous) @ 25C<\/td>\n60 A (Tc)<\/td>\n<\/tr>\n
RDS(on) @ 10V<\/td>\n29 mOhm typ, 33 mOhm max<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n99 nC typical @ 10V<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n5860 pF<\/td>\n<\/tr>\n
VGS(th)<\/td>\n3.0 V to 5.0 V<\/td>\n<\/tr>\n
Energ\u00eda de avalancha (EAS)<\/td>\n230 mJ<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n390 W @ 25C (Tc)<\/td>\n<\/tr>\n
Paquete<\/td>\nTO-220AB<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55 to +175 C (Tj)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Low 29mOhm RDS(on) minimizes conduction losses<\/li>\n
  • High 60A continuous current rating<\/li>\n
  • 175C maximum junction temperature for improved ruggedness<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Plasma display panel sustain and energy recovery<\/li>\n
    • Motor drive and inverter power stages<\/li>\n
    • Switch-mode power supply primary-side switch<\/li>\n
    • DC-DC converter high-power switching<\/li>\n
    • Battery management system power switching<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRFB4332PBF from Infineon Technologies is an N-channel power MOSFET rated at 250V, 60A with 29mOhm on-resistance. Designed for PDP sustain, energy recovery, and pass switch applications, it features 175C maximum junction temperature and high repetitive peak current capability in a TO-220AB package. Key Specifications Type N-Channel VDS 250 V ID (continuous) @ […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7479","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"N-ch MOSFET, 250V, 60A, 29mOhm, TO-220AB, 175C Tj","date_code":"","package_case":"TO-220AB (15.6 x 4.8 mm)","in_stock":4123,"datasheet":"https:\/\/www.infineon.com\/cms\/en\/product\/power\/mosfet\/irfb4332pbf\/","price":"$1.33 @ 1ku","product_introduction":"The IRFB4332PBF from Infineon Technologies is a 250V N-channel IR MOSFET power MOSFET optimized for sustain, energy recovery, and pass switch applications in plasma display panels. With a low on-resistance of 29mOhm at 10V gate drive and 60A continuous drain current, it provides efficient high-current switching. The 175C maximum junction temperature and 230mJ avalanche energy rating ensure reliable operation under demanding conditions. The TO-220AB through-hole package provides excellent thermal performance with 0.38 C\/W junction-to-case thermal resistance and 390W power dissipation capability at 25C case temperature.","working_principle":"The IRFB4332PBF operates as a voltage-controlled N-channel enhancement-mode power MOSFET. (1) When the gate-source voltage exceeds the threshold (3.0-5.0V), the conductive channel forms between drain and source. At VGS = 10V, the channel is fully enhanced with RDS(on) = 29mOhm, providing low conduction loss. (2) During switching transitions, the gate charge (99nC typical) must be supplied or removed by the gate driver circuit. The switching speed is determined by the gate driver current capability and the MOSFET capacitances. (3) The body diode provides reverse conduction, and the avalanche capability (230mJ) protects the device during inductive energy dump events when the drain voltage exceeds the breakdown rating.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Gate drive input<\/td><\/tr>
      2<\/td>Drain<\/td>Drain terminal (connected to tab)<\/td><\/tr>
      3<\/td>Source<\/td>Source terminal<\/td><\/tr><\/table>","application_scenarios":"
      • Plasma display panel sustain and energy recovery switching<\/li>
      • Motor drive H-bridge and three-phase inverter power stages<\/li>
      • Switch-mode power supply primary-side switching element<\/li>
      • DC-DC converter high-power switching with 250V blocking<\/li>
      • Battery management system power switching and protection<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        IRFB4332PBF-2<\/td>Infineon<\/td>Improved version<\/td><\/tr>
        IRFP4332PBF<\/td>Infineon<\/td>TO-247 package variant<\/td><\/tr>
        IRFB4310PBF<\/td>Infineon<\/td>100V, lower RDS(on)<\/td><\/tr>
        STW39NM50ND<\/td>STMicroelectronics<\/td>500V, 28A, TO-247<\/td><\/tr>
        FCH104N60F<\/td>onsemi<\/td>600V, 39A, SuperFET III<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7479","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=7479"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7479\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=7479"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=7479"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=7479"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=7479"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}