{"id":7475,"date":"2026-06-24T07:10:18","date_gmt":"2026-06-24T07:10:18","guid":{"rendered":"https:\/\/materialparts.com\/ucc5390ecdwv\/"},"modified":"2026-06-24T07:10:18","modified_gmt":"2026-06-24T07:10:18","slug":"ucc5390ecdwv","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/ucc5390ecdwv\/","title":{"rendered":"UCC5390ECDWV"},"content":{"rendered":"

Productos<\/h2>\n

The UCC5390ECDWV from Texas Instruments is a single-channel isolated gate driver with 17A peak source\/sink current and UVLO referenced to GND2. With 5kVRMS isolation, 65ns propagation delay, and 100kV\/\u03bcs CMTI, it drives IGBTs, SiC MOSFETs, and power MOSFETs in automotive and industrial applications in an 8-pin DWV package with 8.5mm creepage.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Peak Source Current<\/td>\n17 A<\/td>\n<\/tr>\n
Peak Sink Current<\/td>\n17 A<\/td>\n<\/tr>\n
Tensi\u00f3n de aislamiento<\/td>\n5000 VRMS (DWV)<\/td>\n<\/tr>\n
Retardo de propagaci\u00f3n<\/td>\n65 ns (typical)<\/td>\n<\/tr>\n
CMTI<\/td>\n100 kV\/\u03bcs (minimum)<\/td>\n<\/tr>\n
Input Supply Voltage<\/td>\n3 V to 15 V<\/td>\n<\/tr>\n
Output Supply Voltage<\/td>\n13.2 V to 33 V<\/td>\n<\/tr>\n
UVLO Threshold<\/td>\n12 V (typical)<\/td>\n<\/tr>\n
Rise Time<\/td>\n26 ns<\/td>\n<\/tr>\n
Fall Time<\/td>\n22 ns<\/td>\n<\/tr>\n
Paquete<\/td>\nSOIC-8 DWV (8.5mm creepage)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-40\u00b0C to +125\u00b0C<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • 17A peak source and sink current for driving large IGBT and SiC MOSFET gate charges<\/li>\n
  • 5kVRMS reinforced isolation with 7000VPK transient rating<\/li>\n
  • UVLO referenced to GND2 for true undervoltage detection in bipolar supply configurations<\/li>\n
  • SiO2 capacitive isolation technology with >40 year barrier lifetime<\/li>\n
  • CMOS input logic with -5V negative voltage handling<\/li>\n
  • AEC-Q100 qualified (UCC5390-Q1 variant) for automotive applications<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Motor drive inverter IGBT and SiC MOSFET gate driving<\/li>\n
    • HEV\/EV traction inverter and on-board charger power stages<\/li>\n
    • Solar inverter power module gate drive<\/li>\n
    • High-voltage DC-DC converter isolated gate drive<\/li>\n
    • UPS and industrial power supply isolated driver<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The UCC5390ECDWV from Texas Instruments is a single-channel isolated gate driver with 17A peak source\/sink current and UVLO referenced to GND2. With 5kVRMS isolation, 65ns propagation delay, and 100kV\/\u03bcs CMTI, it drives IGBTs, SiC MOSFETs, and power MOSFETs in automotive and industrial applications in an 8-pin DWV package with 8.5mm creepage. Key Specifications […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,32],"tags":[],"chip_brand":[138],"class_list":["post-7475","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-low-dropout-regulators-ldo","chip_brand-ti"],"acf":{"brief_explanation":"17A isolated gate driver, 5kVRMS, UVLO-GND2, SiC\/IGBT, SOIC-8 DWV","date_code":"","package_case":"SOIC-8 DWV (5.85 x 11.5 mm, 8.5mm creepage)","in_stock":4523,"datasheet":"https:\/\/www.ti.com\/product\/UCC5390","price":".50 @ 1ku","product_introduction":"The UCC5390ECDWV from Texas Instruments is a high-current single-channel isolated gate driver designed to drive IGBTs, SiC MOSFETs, and power MOSFETs in high-voltage applications. The device provides 17A peak source and sink current with UVLO2 referenced to GND2 (E variant), enabling true undervoltage detection in bipolar supply configurations commonly used with SiC and IGBT devices. The 5kVRMS reinforced isolation barrier uses SiO2 capacitive technology with over 40 years barrier lifetime, while the 8-pin DWV package provides 8.5mm creepage for high-voltage safety compliance. With 65ns typical propagation delay, 100kV\/\u03bcs minimum CMTI, and 26ns\/22ns rise\/fall times, the UCC5390ECDWV delivers precise and robust gate drive for demanding power conversion applications.","working_principle":"The UCC5390ECDWV operates as a capacitive-isolated single-channel gate driver. (1) The input stage receives CMOS logic signals on the IN+ and IN- pins, with the primary side powered by VCC1 (3-15V). The input comparator determines the desired output state, and the digital signal is coupled across the isolation barrier using SiO2 capacitive isolation. (2) The output stage on the secondary side is powered by VCC2 (13.2-33V) and provides 17A peak source current through a parallel P-channel and N-channel MOSFET pull-up structure, and 17A peak sink current through an N-channel MOSFET pull-down. The UVLO2 referenced to GND2 ensures the output is disabled when VCC2 drops below 12V, protecting against insufficient gate drive voltage that could cause high dissipation in the power switch. (3) The capacitive isolation barrier provides galvanic isolation up to 5kVRMS with high common-mode transient immunity (CMTI) of 100kV\/\u03bcs minimum, preventing false switching during high dv\/dt events in motor drive and inverter applications.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>VCC1<\/td>Primary side supply (3-15V)<\/td><\/tr>
      2<\/td>IN+<\/td>Non-inverting input<\/td><\/tr>
      3<\/td>IN-<\/td>Inverting input<\/td><\/tr>
      4<\/td>GND1<\/td>Primary side ground<\/td><\/tr>
      5<\/td>GND2<\/td>Secondary side ground (UVLO ref)<\/td><\/tr>
      6<\/td>OUTH<\/td>Source output (pull-up)<\/td><\/tr>
      7<\/td>VCC2<\/td>Secondary side supply (13.2-33V)<\/td><\/tr>
      8<\/td>OUTL<\/td>Sink output (pull-down)<\/td><\/tr><\/table>","application_scenarios":"
      • Motor drive inverter SiC MOSFET and IGBT isolated gate drive with bipolar supply<\/li>
      • HEV\/EV traction inverter power module gate driving with 5kV isolation<\/li>
      • Solar string inverter SiC MOSFET driver with high CMTI requirement<\/li>
      • Industrial DC-DC converter isolated IGBT gate drive<\/li>
      • UPS and server power supply isolated MOSFET driver<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        UCC5390SCDWV<\/td>TI<\/td>Split output variant (separate source\/sink)<\/td><\/tr>
        UCC5350MCDWV<\/td>TI<\/td>10A with Miller clamp<\/td><\/tr>
        UCC5320ECDWV<\/td>TI<\/td>4.3A\/4.4A, UVLO-GND2<\/td><\/tr>
        ADuM4135<\/td>Analog Devices<\/td>Isolated IGBT driver, desat detection<\/td><\/tr>
        Si823x<\/td>Silicon Labs<\/td>Dual isolated gate driver<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7475","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=7475"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7475\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=7475"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=7475"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=7475"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=7475"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}