The IRF4905 from Infineon (formerly International Rectifier) is a -55V P-channel power MOSFET with 0.02 Ohm RDS(on) at -10V gate drive and -74A continuous drain current in a TO-220 through-hole package.<\/p>\n
| Tipo<\/td>\n | P-Channel Enhancement MOSFET<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| VDSS<\/td>\n | -55 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| ID<\/td>\n | -74 A (continuous @ TC=25\u00b0C)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| RDS(on)<\/td>\n | 0.02 Ohm max @ VGS=-10V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| VGS(th)<\/td>\n | -2.0 to -4.0 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| Total Gate Charge<\/td>\n | 120 nC typical<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| Power Dissipation<\/td>\n | 200 W @ TC=25\u00b0C<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| Temperatura de funcionamiento<\/td>\n | -55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| Paquete<\/td>\n | TO-220AB (3-pin)<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The IRF4905 from Infineon (formerly International Rectifier) is a -55V P-channel power MOSFET with 0.02 Ohm RDS(on) at -10V gate drive and -74A continuous drain current in a TO-220 through-hole package. Key Specifications Type P-Channel Enhancement MOSFET VDSS -55 V ID -74 A (continuous @ TC=25\u00b0C) RDS(on) 0.02 Ohm max @ VGS=-10V VGS(th) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7424","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"-55V P-ch MOSFET, 20mR RDS(on), -74A, TO-220","date_code":"","package_case":"TO-220AB (15.60 x 10.40 x 4.60 mm)","in_stock":7800,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf4905pbf.pdf","price":"$2.10 @ 1ku","product_introduction":"The IRF4905 from Infineon is a -55V P-channel power MOSFET with ultra-low 20mOhm on-resistance and -74A continuous drain current in a TO-220 package. As one of the most popular P-channel power MOSFETs, it is commonly used as the high-side switch in H-bridge motor drives paired with N-channel devices like the IRFZ44N or IRF3205. The P-channel architecture simplifies gate drive design for high-side switching, requiring only that the gate be pulled below the source voltage rather than needing a bootstrap supply. The -55V rating is suitable for 12V and 24V bus systems. The very low 20mOhm RDS(on) minimizes conduction losses at high current. The 120nC gate charge is relatively high, requiring a robust gate driver for fast switching, but is acceptable for motor drive frequencies (10-20kHz).","working_principle":"The IRF4905 is a planar P-channel enhancement-mode vertical DMOS power MOSFET. (1) P-Channel Operation: Current flows from source to drain when VGS is negative (gate below source). The body diode is oriented with anode at drain and cathode at source. (2) High-Side Switching: When used as a high-side switch, the source connects to the positive supply and the load connects between drain and ground. Turning on the P-channel MOSFET simply requires pulling the gate to ground (for 10V+ supply) or below the source by at least 4.5V. This is much simpler than driving an N-channel high-side MOSFET which requires a gate voltage above the supply rail. (3) RDS(on) Penalty: The 20mOhm RDS(on) is approximately 2-3x higher than a comparable N-channel device at the same die area due to the lower hole mobility. Despite this, the gate drive simplicity often makes P-channel the preferred choice for high-side switches at moderate switching frequencies.","pin_description":"
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