The IRFZ44N from Infineon (formerly International Rectifier) is a 55V N-channel power MOSFET with 0.022 Ohm RDS(on) at 10V gate drive and 49A continuous drain current in a TO-220 through-hole package.<\/p>\n
| Tipo<\/td>\n | N-Channel Enhancement MOSFET<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| VDSS<\/td>\n | 55 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| ID<\/td>\n | 49 A (continuous @ TC=25\u00b0C)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| RDS(on)<\/td>\n | 0.022 Ohm max @ VGS=10V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| VGS(th)<\/td>\n | 2.0 to 4.0 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| Total Gate Charge<\/td>\n | 67 nC typical<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| Power Dissipation<\/td>\n | 131 W @ TC=25\u00b0C<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| Temperatura de funcionamiento<\/td>\n | -55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| Paquete<\/td>\n | TO-220AB (3-pin)<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The IRFZ44N from Infineon (formerly International Rectifier) is a 55V N-channel power MOSFET with 0.022 Ohm RDS(on) at 10V gate drive and 49A continuous drain current in a TO-220 through-hole package. Key Specifications Type N-Channel Enhancement MOSFET VDSS 55 V ID 49 A (continuous @ TC=25\u00b0C) RDS(on) 0.022 Ohm max @ VGS=10V VGS(th) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7423","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"55V N-ch MOSFET, 22mR RDS(on), 49A, TO-220","date_code":"","package_case":"TO-220AB (15.60 x 10.40 x 4.60 mm)","in_stock":14200,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irfz44npbf.pdf","price":"$0.65 @ 1ku","product_introduction":"The IRFZ44N from Infineon is one of the most popular and cost-effective N-channel power MOSFETs, offering 55V breakdown, 22mOhm maximum on-resistance, and 49A continuous drain current in a TO-220 package. The device provides an excellent balance of low RDS(on), moderate gate charge (67nC), and low cost, making it the go-to choice for countless hobbyist and professional designs. The 55V rating is well-suited for 12V and 24V systems including automotive accessories, LED lighting, and battery-powered equipment. The N suffix denotes the improved version with lower RDS(on) than the original IRFZ44. At 49A, the conduction loss through 22mOhm is P = I2R = 492 x 0.022 = 53W, requiring adequate heatsinking for high-current operation.","working_principle":"The IRFZ44N is a planar N-channel enhancement-mode vertical DMOS power MOSFET. (1) Balanced Design: The 22mOhm RDS(on) at 55V represents a good balance between on-resistance and die area (cost). The device is not optimized for ultra-low RDS(on) like the IRF3205, but provides significantly better performance than older designs at a lower cost. (2) Moderate Gate Charge: The 67nC total gate charge is manageable with simple gate drive circuits (e.g., TC4420 driver), allowing switching at 50-100kHz in typical applications. (3) Body Diode: The integral body diode has a forward voltage of approximately 1.3V and moderate reverse recovery. For half-bridge and H-bridge applications, external Schottky diodes may be needed to reduce recovery losses. (4) Versatility: The combination of 55V, 49A, and 22mOhm in a low-cost TO-220 package has made this device a standard choice for motor drivers, solenoid drivers, and general-purpose switching at 12-24V.","pin_description":"
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