{"id":7243,"date":"2026-06-23T07:55:43","date_gmt":"2026-06-23T07:55:43","guid":{"rendered":"https:\/\/materialparts.com\/ngtb40n120fl2wg\/"},"modified":"2026-06-23T07:55:43","modified_gmt":"2026-06-23T07:55:43","slug":"ngtb40n120fl2wg","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/ngtb40n120fl2wg\/","title":{"rendered":"NGTB40N120FL2WG"},"content":{"rendered":"

Productos<\/h2>\n

The NGTB40N120FL2WG from onsemi is a 1200V, 40A Field Stop Trench IGBT with co-packaged anti-parallel diode in a TO-247-3LD package. Optimized for high-frequency switching, it targets motor drives, inverters, and welding equipment.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n
VCES<\/td>\n1200 V<\/td>\n<\/tr>\n
IC (TC=100C)<\/td>\n40 A<\/td>\n<\/tr>\n
VCE(sat)<\/td>\n1.8 V (typical at IC=40A)<\/td>\n<\/tr>\n
Total Gate Charge<\/td>\n175 nC (typical)<\/td>\n<\/tr>\n
Co-packaged Diode VF<\/td>\n1.5 V (typical at IF=40A)<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n250 W (at TC=25C)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55C to +175C<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • 1200V Field Stop Trench IGBT for high-voltage motor drive and inverter applications<\/li>\n
  • 1.8V low VCE(sat) at 40A for reduced conduction losses<\/li>\n
  • Co-packaged anti-parallel diode for inductive load freewheeling<\/li>\n
  • 175nC total gate charge for efficient high-frequency switching<\/li>\n
  • Positive temperature coefficient for easy paralleling<\/li>\n
  • TO-247-3LD package for efficient heatsink mounting<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Motor drive inverters at 1200V bus voltage<\/li>\n
    • Welding machine power stages<\/li>\n
    • Solar and wind inverters<\/li>\n
    • Uninterruptible power supply (UPS) inverter stages<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The NGTB40N120FL2WG from onsemi is a 1200V, 40A Field Stop Trench IGBT with co-packaged anti-parallel diode in a TO-247-3LD package. Optimized for high-frequency switching, it targets motor drives, inverters, and welding equipment. Key Specifications VCES 1200 V IC (TC=100C) 40 A VCE(sat) 1.8 V (typical at IC=40A) Total Gate Charge 175 nC (typical) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,33],"tags":[],"chip_brand":[144],"class_list":["post-7243","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-led-driver-ics","chip_brand-on"],"acf":{"brief_explanation":"1200V 40A IGBT + diode, 1.8V VCE(sat), TO-247-3LD, trench FS, motor drive\/inverter","date_code":"","package_case":"TO-247-3LD (21.00 x 15.70 x 5.20 mm, through-hole)","in_stock":4476,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/ngtb40n120fl2w-d.pdf","price":"$4.50 @ 1ku","product_introduction":"The NGTB40N120FL2WG from onsemi is a 1200V, 40A Field Stop Trench IGBT with an integrated anti-parallel diode in a TO-247-3LD through-hole package. The Field Stop Trench IGBT technology provides low saturation voltage (1.8V typical at 40A) while maintaining fast switching capability, making the device suitable for high-frequency motor drive and inverter applications operating from 800V DC bus rails. The co-packaged anti-parallel diode provides a freewheeling path for inductive loads, eliminating the need for an external diode and simplifying the bill of materials. The 175nC total gate charge enables switching frequencies up to 20-40kHz with moderate gate drive power, suitable for motor drive PWM frequencies. The positive temperature coefficient of VCE(sat) ensures balanced current sharing when multiple devices are paralleled for higher power applications. The TO-247-3LD package provides low thermal resistance junction-to-case (0.50C\/W typical) for efficient heatsink mounting. The device is 100% tested for parameters at 125C, ensuring reliable operation in real-world conditions.","working_principle":"The NGTB40N120FL2WG combines an IGBT and anti-parallel diode in a single package. (1) IGBT: The Insulated Gate Bipolar Transistor combines the simple gate drive of a MOSFET with the low conduction loss of a BJT. When VGE exceeds the threshold (5-6V typical), an inversion layer forms in the MOSFET channel, injecting electrons into the N- drift region. The P+ collector injects holes into the drift region, causing conductivity modulation that dramatically reduces the effective resistance compared to a MOSFET of the same voltage rating. The Field Stop layer is a thin N+ buffer between the N- drift and P+ collector, reducing the drift region thickness and enabling lower VCE(sat) and faster turn-off than conventional punch-through IGBTs. (2) Trench Gate: The vertical trench gate structure provides higher channel density than planar gates, reducing the channel resistance contribution and enabling lower VCE(sat). (3) Anti-Parallel Diode: The co-packaged fast recovery diode conducts when the IGBT is off and the load current is in the reverse direction (inductive freewheeling). The diode is optimized for low forward voltage and fast reverse recovery to minimize losses in PWM switching applications.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>Gate drive input<\/td><\/tr>
      2<\/td>Collector<\/td>Output<\/td>IGBT collector \/ Diode cathode (tab)<\/td><\/tr>
      3<\/td>Emitter<\/td>Output<\/td>IGBT emitter \/ Diode anode<\/td><\/tr><\/table>","application_scenarios":"
      • Motor drive inverters at 1200V bus voltage with 1.8V low VCE(sat)<\/li>
      • Welding machine power stages with co-packaged anti-parallel diode<\/li>
      • Solar and wind inverters with positive temperature coefficient for paralleling<\/li>
      • UPS inverter stages at 40A\/1200V with 175nC gate charge<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        onsemi<\/td>NGTB40N120FL2WG1<\/td>TO-247<\/td>Higher grade version<\/td><\/tr>
        Infineon<\/td>IKW40N120T2<\/td>TO-247<\/td>1200V, 40A, TrenchStop<\/td><\/tr>
        ST<\/td>STGW40N120KS<\/td>TO-247<\/td>1200V, 40A, MDmesh<\/td><\/tr>
        onsemi<\/td>FGH40N60SMD<\/td>TO-247<\/td>600V, 40A, lower voltage<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7243","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=7243"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7243\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=7243"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=7243"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=7243"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=7243"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}