{"id":7229,"date":"2026-06-23T07:39:53","date_gmt":"2026-06-23T07:39:53","guid":{"rendered":"https:\/\/materialparts.com\/ipg20n04s4l11atma1\/"},"modified":"2026-06-23T07:39:53","modified_gmt":"2026-06-23T07:39:53","slug":"ipg20n04s4l11atma1","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/ipg20n04s4l11atma1\/","title":{"rendered":"IPG20N04S4L11ATMA1"},"content":{"rendered":"

Productos<\/h2>\n

The IPG20N04S4L11ATMA1 from Infineon is a 40V, 20A OptiMOS N-channel power MOSFET in a PG-TSDSON-8 (SuperSO8) package. With 1.1mOhm RDS(on) and 40V rating, it targets synchronous rectification and motor drive in high-current applications.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n
VDSS<\/td>\n40 V<\/td>\n<\/tr>\n
ID<\/td>\n20 A (at TC=25C)<\/td>\n<\/tr>\n
RDS(on)<\/td>\n1.1 mOhm (max, VGS=10V)<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n25 nC (typical)<\/td>\n<\/tr>\n
Paquete<\/td>\nPG-TSDSON-8 (SuperSO8)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55C to +175C<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • 1.1mOhm ultra-low RDS(on) for minimal conduction loss at 20A<\/li>\n
  • 40V rating for 12V\/24V automotive and industrial bus applications<\/li>\n
  • SuperSO8 package with exposed drain for superior thermal performance<\/li>\n
  • 25nC low gate charge for efficient high-frequency switching<\/li>\n
  • 175C maximum junction temperature for demanding environments<\/li>\n
  • 100% avalanche tested for ruggedness in inductive applications<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Synchronous rectification in DC-DC converters<\/li>\n
    • Motor drive H-bridge and half-bridge stages<\/li>\n
    • Battery protection and load switching in automotive<\/li>\n
    • OR-ing and reverse polarity protection circuits<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IPG20N04S4L11ATMA1 from Infineon is a 40V, 20A OptiMOS N-channel power MOSFET in a PG-TSDSON-8 (SuperSO8) package. With 1.1mOhm RDS(on) and 40V rating, it targets synchronous rectification and motor drive in high-current applications. Key Specifications VDSS 40 V ID 20 A (at TC=25C) RDS(on) 1.1 mOhm (max, VGS=10V) Gate Charge (Qg) 25 nC […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7229","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"40V 20A OptiMOS, 1.1mOhm, SuperSO8, 25nC Qg, 175C, sync rect \/ motor drive","date_code":"","package_case":"PG-TSDSON-8 (5.30 x 5.20 x 0.85 mm, exposed drain pad)","in_stock":3933,"datasheet":"https:\/\/www.infineon.com\/dgdl\/Infineon-IPG20N04S4L11-DS-v02_00-EN.pdf","price":"$1.20 @ 1ku","product_introduction":"The IPG20N04S4L11ATMA1 from Infineon is a 40V, 20A OptiMOS N-channel power MOSFET in a PG-TSDSON-8 (SuperSO8) SMD package. The device features an ultra-low 1.1mOhm maximum RDS(on) at VGS=10V, making it one of the lowest resistance 40V MOSFETs available in this package class. This extremely low on-resistance minimizes conduction losses in high-current applications such as synchronous rectification, motor drive, and battery switching. The SuperSO8 package provides a large exposed drain pad on the top surface for excellent thermal performance, enabling the full 20A current rating without additional heatsinking in many applications. The 25nC typical gate charge enables efficient high-frequency switching, reducing switching losses in DC-DC converters operating at hundreds of kHz. The 175C maximum junction temperature supports operation in demanding automotive and industrial environments. The device is 100% avalanche tested, ensuring reliable performance during inductive switching transients. The PG-TSDSON-8 package footprint is compatible with industry-standard SuperSO8\/PowerPAK SO-8 layouts.","working_principle":"The IPG20N04S4L11ATMA1 is a vertical N-channel trench MOSFET using Infineon's OptiMOS technology. (1) Trench Gate: Deep trench gates provide high channel density, achieving the ultra-low 1.1mOhm RDS(on) by maximizing the channel width per unit die area. The trench structure eliminates the JFET region present in planar MOSFETs, further reducing resistance. (2) On-State: When VGS exceeds the threshold (~2-3V), inversion layers form along the trench sidewalls, connecting source to drain. The very large total channel width results in extremely low channel resistance. At VGS=10V, the channel is fully enhanced and RDS(on) reaches its minimum value of 1.1mOhm. (3) Switching: The gate charge of 25nC must be supplied\/removed for each switching cycle. The low Qg minimizes the energy required from the gate driver. The low RDS(on) x Qg figure of merit (27mOhm*nC) makes this device highly efficient for high-frequency synchronous buck converters. (4) Thermal: The exposed drain pad in the SuperSO8 package provides a low thermal resistance path from the die to the PCB, enabling the 20A current rating with proper PCB copper area as heatsink.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Source<\/td>Output<\/td>Source terminal<\/td><\/tr>
      2<\/td>Source<\/td>Output<\/td>Source terminal<\/td><\/tr>
      3<\/td>Gate<\/td>Input<\/td>Gate drive input<\/td><\/tr>
      4<\/td>Source<\/td>Output<\/td>Source terminal (sense)<\/td><\/tr>
      5-8<\/td>Drain<\/td>Output<\/td>Drain terminal (exposed pad)<\/td><\/tr><\/table>","application_scenarios":"
      • Synchronous rectification in DC-DC converters with 1.1mOhm RDS(on)<\/li>
      • Motor drive H-bridge and half-bridge stages at 20A\/40V<\/li>
      • Battery protection and load switching in automotive with 175C rating<\/li>
      • OR-ing and reverse polarity protection circuits with ultra-low loss<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>BSZ021N04LS6ATMA1<\/td>SuperSO8<\/td>2.1mOhm, 40V, OptiMOS<\/td><\/tr>
        onsemi<\/td>NTMFS4C05N<\/td>Power56<\/td>0.88mOhm, 40V<\/td><\/tr>
        TI<\/td>CSD17573Q5B<\/td>SON-5x6<\/td>0.95mOhm, 30V, NexFET<\/td><\/tr>
        Vishay<\/td>SiRA20DP-T1-GE3<\/td>PowerPAK SO-8<\/td>1.1mOhm, 40V<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7229","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=7229"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7229\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=7229"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=7229"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=7229"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=7229"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}