{"id":7227,"date":"2026-06-23T07:39:49","date_gmt":"2026-06-23T07:39:49","guid":{"rendered":"https:\/\/materialparts.com\/irfbc40pbf\/"},"modified":"2026-06-23T07:39:49","modified_gmt":"2026-06-23T07:39:49","slug":"irfbc40pbf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/irfbc40pbf\/","title":{"rendered":"IRFBC40PBF"},"content":{"rendered":"

Productos<\/h2>\n

The IRFBC40PBF from Infineon (formerly International Rectifier) is a 600V, 6.2A N-channel power MOSFET in a TO-220AB package. With 2.2 Ohm RDS(on) and fast switching, it targets off-line switching power supplies and motor drives.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n
VDSS<\/td>\n600 V<\/td>\n<\/tr>\n
ID<\/td>\n6.2 A (at TC=25C)<\/td>\n<\/tr>\n
RDS(on)<\/td>\n2.2 Ohm (max, VGS=10V)<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n30 nC (typical)<\/td>\n<\/tr>\n
Input Capacitance<\/td>\n1050 pF (typical)<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n125 W (at TC=25C)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • 600V drain-source voltage for off-line and PFC applications<\/li>\n
  • 2.2 Ohm RDS(on) for moderate conduction loss at 6.2A<\/li>\n
  • 30nC low gate charge for fast switching and low drive power<\/li>\n
  • TO-220AB through-hole package for easy heatsink mounting<\/li>\n
  • 100% avalanche tested for ruggedness in inductive applications<\/li>\n
  • Pb-free and RoHS compliant<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Off-line switching power supplies and flyback converters<\/li>\n
    • PFC boost converters up to 600V<\/li>\n
    • Motor drives and inverter bridges<\/li>\n
    • High-voltage load switching and solid-state relays<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRFBC40PBF from Infineon (formerly International Rectifier) is a 600V, 6.2A N-channel power MOSFET in a TO-220AB package. With 2.2 Ohm RDS(on) and fast switching, it targets off-line switching power supplies and motor drives. Key Specifications VDSS 600 V ID 6.2 A (at TC=25C) RDS(on) 2.2 Ohm (max, VGS=10V) Gate Charge (Qg) 30 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7227","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"600V 6.2A N-ch MOSFET, 2.2Ohm, TO-220AB, 30nC Qg, avalanche rated, PFC\/flyback","date_code":"","package_case":"TO-220AB (15.60 x 10.40 x 4.60 mm, through-hole)","in_stock":4975,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irfbc40.pdf?fileId=5546d462533600a4015355d5a59219cb","price":"$0.90 @ 1ku","product_introduction":"The IRFBC40PBF from Infineon (formerly International Rectifier) is a 600V, 6.2A N-channel power MOSFET in a TO-220AB through-hole package. The device is designed for high-voltage switching applications including off-line power supplies, PFC boost converters, and motor drives. The 2.2 Ohm maximum RDS(on) at VGS=10V provides moderate conduction loss suitable for medium-power applications at 600V. The 30nC typical gate charge enables fast switching with modest gate drive circuitry, reducing switching losses in hard-switched converters. The device is 100% avalanche tested, ensuring reliable operation in inductive switching environments where voltage spikes may exceed the rated VDS momentarily. The TO-220AB package allows direct heatsink mounting for thermal management at the 125W rated power dissipation. The device features a typical threshold voltage of 3-5V and is designed for standard 10V gate drive. As a classic IR HEXFET device, the IRFBC40 has been widely used in commercial power supply designs for decades, with proven reliability and extensive application literature available.","working_principle":"The IRFBC40PBF is a vertical N-channel power MOSFET using the HEXFET cell structure. (1) Structure: Thousands of hexagonal MOSFET cells are connected in parallel on the die. Each cell has a gate oxide, polysilicon gate, and body region. The vertical current flow from drain (bottom of die) through the N- drift region and channel to source (top of die) enables high voltage blocking and high current capability. (2) On-State: When VGS exceeds the threshold (3-5V), an inversion layer (channel) forms under the gate oxide, connecting the source N+ to the N- drift region. Current flows vertically through the channel and drift region. The 2.2 Ohm RDS(on) is dominated by the drift region resistance, which is necessary to support the 600V drain-source voltage. (3) Blocking: When VGS = 0V, the channel is absent and the body-drain P-N junction blocks current flow. The N- drift region depletes under applied VDS, supporting 600V. (4) Switching: The gate charge (30nC) must be supplied\/removed to turn on\/off the channel. The switching speed depends on the gate drive current capability. Fast gate drive reduces switching losses but increases EMI.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>Gate drive input<\/td><\/tr>
      2<\/td>Drain<\/td>Output<\/td>Drain (high-voltage terminal, tab)<\/td><\/tr>
      3<\/td>Source<\/td>Output<\/td>Source (current return)<\/td><\/tr><\/table>","application_scenarios":"
      • Off-line switching power supplies and flyback converters at 600V<\/li>
      • PFC boost converters with 30nC gate charge for fast switching<\/li>
      • Motor drives and inverter bridges with avalanche ruggedness<\/li>
      • High-voltage load switching and solid-state relays in TO-220AB<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>IRFBC40APBF<\/td>TO-220AB<\/td>Improved version<\/td><\/tr>
        ST<\/td>STF6N60M2<\/td>TO-220<\/td>600V, 5.5A, MDmesh M2<\/td><\/tr>
        onsemi<\/td>FQPF6N60C<\/td>TO-220F<\/td>600V, 6A, SuperFET<\/td><\/tr>
        Infineon<\/td>IPD60R600P7S<\/td>D2PAK-7<\/td>600V, 7A, SMD, CoolMOS<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7227","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=7227"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7227\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=7227"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=7227"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=7227"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=7227"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}