The M25P16-VMN6TP from STMicroelectronics is a 16Mbit (2Mx8) SPI serial flash memory in a SOIC-8 package. With 75MHz SPI clock and 256-byte page programming, it provides reliable non-volatile storage for firmware, configuration, and data logging.<\/p>\n
| Memory Size<\/td>\n | 16 Mbit (2,097,152 x 8 bit)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Interface<\/td>\n | SPI (0\/0 mode, 75 MHz max)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Page Size<\/td>\n | 256 bytes<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Sector\/Block<\/td>\n | 32 sectors (64KB each), 8 blocks (256KB)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Endurance<\/td>\n | 100,000 erase\/write cycles<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Data Retention<\/td>\n | 20 years<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Temperatura de funcionamiento<\/td>\n | -40C to +85C<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The M25P16-VMN6TP from STMicroelectronics is a 16Mbit (2Mx8) SPI serial flash memory in a SOIC-8 package. With 75MHz SPI clock and 256-byte page programming, it provides reliable non-volatile storage for firmware, configuration, and data logging. Key Specifications Memory Size 16 Mbit (2,097,152 x 8 bit) Interface SPI (0\/0 mode, 75 MHz max) Page […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[26,13],"tags":[],"chip_brand":[142],"class_list":["post-7199","post","type-post","status-publish","format-standard","hentry","category-digital-signal-processors-dsp","category-integrated-circuits-ics","chip_brand-st"],"acf":{"brief_explanation":"16Mbit SPI flash, 75MHz, SOIC-8, 256B page, sector erase, WP\/hold, deep power-down","date_code":"","package_case":"SOIC-8 (4.90 x 3.90 x 1.37 mm)","in_stock":8489,"datasheet":"https:\/\/www.st.com\/resource\/en\/datasheet\/m25p16.pdf","price":"$0.60 @ 1ku","product_introduction":"The M25P16-VMN6TP from STMicroelectronics is a 16Mbit (2M x 8) serial flash memory with SPI interface in a SOIC-8 package. The device supports SPI clock frequencies up to 75MHz, providing fast read throughput for firmware execution and data access. The memory is organized as 32 sectors of 64KB each, with 256-byte page programming capability. Page programming time is typically 1.5ms, and sector erase time is typically 1 second. The device supports multiple read modes including standard read, fast read, and dual output fast read for increased bandwidth. Write protection features include individual sector lock-down, hardware write protect (W) pin, and write-enable latch that must be set before any write or erase operation. The hold (HOLD) pin allows the SPI communication to be paused without resetting the device, useful for shared SPI bus applications. Deep power-down mode reduces current consumption to 5uA typical for battery-powered applications. The 100,000 erase\/write cycle endurance and 20-year data retention provide long-term reliability.","working_principle":"The M25P16-VMN6TP uses NOR flash memory with SPI serial interface. (1) Memory Array: The 16Mbit storage is organized as 2,097,152 bytes in 32 sectors of 65,536 bytes (64KB) each. Each sector contains 256 pages of 256 bytes. (2) SPI Protocol: Commands, addresses, and data are transferred serially via the SPI bus (S, Q, D, C pins). The device supports SPI mode 0 (CPOL=0, CPHA=0) and mode 3. Commands are 1 byte, addresses are 24 bits (3 bytes). (3) Read: The READ command outputs data starting at the specified address. FAST_READ reduces the access time by using a dummy clock cycle. Dual output mode uses both Q and D pins for 2x throughput. (4) Program: Page programming writes up to 256 bytes in one operation. The WREN (write enable) command must be issued before programming. Data is first written to an internal buffer, then programmed to the flash array. (5) Erase: Sector erase clears one 64KB sector to all 1s. Bulk erase clears the entire array. Erase operations also require WREN. (6) Protection: The status register provides write protection through block protect bits (BP1, BP2) that define protected address ranges. The W pin provides hardware write protection when low.","pin_description":"
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