The IS42S16160G-7TLI from ISSI is a 16Mbit (1Mx16) synchronous DRAM (SDRAM) in a TSOP-54 package. Operating at 143MHz (CL3) with 3.3V supply, it provides high-speed volatile memory for embedded processing and buffering applications.<\/p>\n
| Memory Size<\/td>\n | 16 Mbit (1,048,576 x 16 bit)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Organization<\/td>\n | 1M words x 16 bits x 4 banks<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Clock Frequency<\/td>\n | 143 MHz (max, CL3)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Tensi\u00f3n de alimentaci\u00f3n<\/td>\n | 3.3 V (+\/-0.3V)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Access Time<\/td>\n | 7 ns (CL3)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Temperatura de funcionamiento<\/td>\n | -40C to +85C (industrial)<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The IS42S16160G-7TLI from ISSI is a 16Mbit (1Mx16) synchronous DRAM (SDRAM) in a TSOP-54 package. Operating at 143MHz (CL3) with 3.3V supply, it provides high-speed volatile memory for embedded processing and buffering applications. Key Specifications Memory Size 16 Mbit (1,048,576 x 16 bit) Organization 1M words x 16 bits x 4 banks Clock […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[26,13],"tags":[],"chip_brand":[210],"class_list":["post-7198","post","type-post","status-publish","format-standard","hentry","category-digital-signal-processors-dsp","category-integrated-circuits-ics","chip_brand-issi"],"acf":{"brief_explanation":"16Mbit SDRAM, 1Mx16, 143MHz CL3, 3.3V, TSOP-54, 4-bank, industrial temp","date_code":"","package_case":"TSOP-54 (22.00 x 8.58 x 1.20 mm, 0.50mm pitch)","in_stock":8909,"datasheet":"https:\/\/www.issi.com\/WW\/pdf\/42S16160G.pdf","price":"$1.80 @ 1ku","product_introduction":"The IS42S16160G-7TLI from ISSI (Integrated Silicon Solution Inc.) is a 16Mbit synchronous dynamic random access memory (SDRAM) organized as 1,048,576 words by 16 bits in a TSOP-54 package. The device features four internal banks for interleaved access, improving memory bandwidth by hiding precharge latency. The 143MHz maximum clock rate at CAS Latency 3 provides a peak bandwidth of 286MB\/s. The SDRAM interface uses a command-based protocol with separate row and column addressing, enabling flexible burst access patterns. Programmable features include CAS latency (2 or 3), burst length (1, 2, 4, 8, or full page), and burst type (sequential or interleaved). Auto refresh (4096 cycles per 64ms) and self refresh modes maintain data integrity during normal and low-power operation. The 3.3V supply with LVCMOS-compatible I\/O simplifies interface with standard embedded processors and FPGAs. The industrial temperature range (-40C to +85C) supports demanding embedded applications.","working_principle":"The IS42S16160G-7TLI uses a synchronous DRAM architecture with command-based operation. (1) Memory Array: The 16Mbit storage is organized as four banks of 262,144 words by 16 bits. Each bank has its own row decoder, column decoder, and sense amplifiers, allowing one bank to be accessed while another is being precharged (bank interleaving). (2) Synchronous Operation: All inputs are registered on the rising edge of the clock (CLK). Commands are issued on each clock cycle using the CS, RAS, CAS, WE, and DQM control signals. (3) Access Sequence: A read operation requires an ACT (row activate) command to open a row, followed by a RD (column read) command after tRCD delay. The data appears on the output after CAS latency (2 or 3 clock cycles). (4) Refresh: SDRAM cells require periodic refresh (4096 cycles every 64ms). Auto refresh performs one refresh cycle per command. Self refresh mode internally generates refresh cycles for low-power standby. (5) Burst: After the initial access, data is automatically output in a burst sequence of 1, 2, 4, 8, or full page length, maximizing bandwidth for sequential access patterns.","pin_description":"
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