{"id":7174,"date":"2026-06-23T06:01:23","date_gmt":"2026-06-23T06:01:23","guid":{"rendered":"https:\/\/materialparts.com\/stb6nk90zt4\/"},"modified":"2026-06-23T06:01:23","modified_gmt":"2026-06-23T06:01:23","slug":"stb6nk90zt4","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/stb6nk90zt4\/","title":{"rendered":"STB6NK90ZT4"},"content":{"rendered":"

Productos<\/h2>\n

The STB6NK90ZT4 from STMicroelectronics is an N-channel 900V SuperMESH power MOSFET with 1.56 Ohm typical RDS(on) in a D2PAK package. Rated at 5.8A continuous drain current with 300mJ avalanche energy, it targets offline SMPS and PFC boost converter applications.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n
VDS (Drain-Source)<\/td>\n900 V<\/td>\n<\/tr>\n
RDS(on) (typical)<\/td>\n1.56 Ohm @ VGS=10V<\/td>\n<\/tr>\n
ID (continuo)<\/td>\n5.8 A @ TC=25C<\/td>\n<\/tr>\n
EAS (avalanche)<\/td>\n300 mJ<\/td>\n<\/tr>\n
Qg (total gate charge)<\/td>\n46.5 nC (typical)<\/td>\n<\/tr>\n
VGS(th)<\/td>\n3.0V to 4.5V<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55C to +150C<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • 900V drain-source voltage for offline PFC and SMPS applications<\/li>\n
  • 1.56 Ohm typical RDS(on) with SuperMESH technology<\/li>\n
  • 100% avalanche tested for rugged switching operation<\/li>\n
  • Zener gate protection for ESD robustness<\/li>\n
  • Low 46.5nC total gate charge for efficient switching<\/li>\n
  • D2PAK surface-mount package with 140W power dissipation<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Offline switch-mode power supplies (SMPS)<\/li>\n
    • PFC boost converters in power factor correction stages<\/li>\n
    • Motor drive inverters for industrial applications<\/li>\n
    • Lighting ballast and LED driver converters<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The STB6NK90ZT4 from STMicroelectronics is an N-channel 900V SuperMESH power MOSFET with 1.56 Ohm typical RDS(on) in a D2PAK package. Rated at 5.8A continuous drain current with 300mJ avalanche energy, it targets offline SMPS and PFC boost converter applications. Key Specifications VDS (Drain-Source) 900 V RDS(on) (typical) 1.56 Ohm @ VGS=10V ID (continuous) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[142],"class_list":["post-7174","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-st"],"acf":{"brief_explanation":"N-ch 900V MOSFET, 1.56Ohm RDS(on), 5.8A, SuperMESH, D2PAK, avalanche rated, PFC\/SMPS","date_code":"","package_case":"D2PAK (TO-263-2) (10.16 x 8.40 x 4.60 mm)","in_stock":11517,"datasheet":"https:\/\/www.st.com\/resource\/en\/datasheet\/stb6nk90zt4.pdf","price":"$2.80 @ 1ku","product_introduction":"The STB6NK90ZT4 from STMicroelectronics is an N-channel 900V SuperMESH power MOSFET in a D2PAK (TO-263) surface-mount package. Using ST's SuperMESH technology, the device achieves 1.56 Ohm typical RDS(on) at VGS=10V with a low 46.5nC total gate charge, providing an excellent figure of merit for high-voltage switching applications. The device is rated for 5.8A continuous drain current at TC=25C and 3.65A at TC=100C. The 300mJ single-pulse avalanche energy rating ensures ruggedness during unclamped inductive switching events. Gate-source Zener protection provides ESD robustness. The D2PAK package enables 140W power dissipation at TC=25C with a junction-to-case thermal resistance of 0.89C\/W. The device is 100% avalanche tested and targeted for offline switch-mode power supplies, PFC boost converters, motor drive inverters, and lighting ballast applications.","working_principle":"The STB6NK90ZT4 uses ST's SuperMESH vertical DMOS technology for high-voltage power switching. (1) Cell Structure: The SuperMESH process uses a striped cell geometry with optimized pitch to minimize the specific on-resistance (RDS(on) x Area). The vertical current flow from drain (substrate) through the drift region and channel to the source provides high blocking voltage and low conduction loss. (2) Drift Region: The 900V blocking capability is achieved through a lightly-doped epitaxial drift layer. The drift layer thickness and doping are optimized to support the electric field during off-state while minimizing resistance during on-state. (3) Gate Charge: The 46.5nC total gate charge includes Qgs (8.5nC) for channel inversion and Qgd (25nC) for Miller plateau. The low Qgd minimizes switching losses in hard-switched applications. (4) Avalanche: When the drain voltage exceeds V(BR)DSS, the device enters avalanche breakdown. The 300mJ energy rating ensures the device can absorb inductive kickback energy without failure. (5) Zener Protection: Integrated gate-source Zener diodes clamp gate voltage transients to +\/-20V, protecting the thin gate oxide from ESD damage.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>MOSFET gate (Zener protected)<\/td><\/tr>
      2<\/td>Drain<\/td>Output<\/td>MOSFET drain (tab\/heat sink)<\/td><\/tr>
      3<\/td>Source<\/td>Output<\/td>MOSFET source<\/td><\/tr><\/table>","application_scenarios":"
      • Offline SMPS primary switch at 900V with 1.56Ohm RDS(on)<\/li>
      • PFC boost converters in CCM\/CRM with 300mJ avalanche rating<\/li>
      • Motor drive inverters for industrial applications with Zener gate protection<\/li>
      • Lighting ballast and LED driver converters at 5.8A continuous current<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        ST<\/td>STP6NK90Z<\/td>TO-220<\/td>Through-hole version<\/td><\/tr>
        Infineon<\/td>IPD60R900P7S<\/td>D2PAK<\/td>900V, 0.9Ohm, CoolMOS<\/td><\/tr>
        onsemi<\/td>FCPF099N65S3<\/td>D2PAK<\/td>650V SuperFET, lower voltage<\/td><\/tr>
        ST<\/td>STW11NM80<\/td>TO-247<\/td>800V, higher power<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7174","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=7174"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7174\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=7174"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=7174"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=7174"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=7174"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}