{"id":7119,"date":"2026-06-23T03:57:34","date_gmt":"2026-06-23T03:57:34","guid":{"rendered":"https:\/\/materialparts.com\/spa08n80c3\/"},"modified":"2026-06-23T03:57:34","modified_gmt":"2026-06-23T03:57:34","slug":"spa08n80c3","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/spa08n80c3\/","title":{"rendered":"SPA08N80C3"},"content":{"rendered":"

Productos<\/h2>\n

The SPA08N80C3 from Infineon is an 800V, 8A N-channel CoolMOS power MOSFET with 1.2 Ohm on-resistance in a TO-252 (DPAK) package. Using superjunction technology, it provides extremely low on-resistance and gate charge for high-efficiency switch-mode power supplies.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n
Polarity<\/td>\nN-Channel<\/td>\n<\/tr>\n
VDSS<\/td>\n800 V<\/td>\n<\/tr>\n
ID<\/td>\n8 A<\/td>\n<\/tr>\n
RDS(on) max<\/td>\n1.2 Ohm @ VGS=10V<\/td>\n<\/tr>\n
Qg typ<\/td>\n32 nC<\/td>\n<\/tr>\n
Technology<\/td>\nSuperjunction (CoolMOS)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55C to +150C<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • 800V superjunction technology for low RDS(on) and Qg<\/li>\n
  • 1.2 Ohm on-resistance for efficient switching<\/li>\n
  • 32nC low gate charge reduces driver power<\/li>\n
  • DPAK surface-mount package for compact SMPS designs<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Off-line SMPS and PFC stages<\/li>\n
    • Adapter and charger power supplies<\/li>\n
    • Auxiliary power supplies<\/li>\n
    • LED driver power stages<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The SPA08N80C3 from Infineon is an 800V, 8A N-channel CoolMOS power MOSFET with 1.2 Ohm on-resistance in a TO-252 (DPAK) package. Using superjunction technology, it provides extremely low on-resistance and gate charge for high-efficiency switch-mode power supplies. Key Specifications Polarity N-Channel VDSS 800 V ID 8 A RDS(on) max 1.2 Ohm @ VGS=10V […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7119","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"N-ch CoolMOS, 800V, 8A, 1.2Ohm, 32nC Qg, DPAK, off-line SMPS\/PFC","date_code":"","package_case":"DPAK \/ TO-252 (6.60 x 6.00 x 2.30 mm)","in_stock":9120,"datasheet":"https:\/\/www.infineon.com\/cms\/en\/product\/power\/mosfet\/n-channel\/spa08n80c3\/","price":"$1.35 @ 1ku","product_introduction":"The SPA08N80C3 from Infineon is an 800V N-channel CoolMOS superjunction power MOSFET rated at 8A continuous drain current with 1.2 Ohm maximum on-resistance at VGS=10V in a DPAK (TO-252) package. Superjunction technology provides both low RDS(on) and low gate charge (32nC typical), enabling high-efficiency operation in off-line switch-mode power supplies. The device is suitable for PFC boost stages, flyback converters, and other high-voltage switching applications. DPAK surface-mount package allows compact PCB layouts.","working_principle":"The SPA08N80C3 uses Infineon's superjunction (CoolMOS) technology. (1) Superjunction Structure: Unlike conventional planar MOSFETs where drift region thickness and doping determine both voltage rating and RDS(on), superjunction technology uses alternating p and n columns in the drift region. This allows the drift region to be heavily doped for low RDS(on) while maintaining high breakdown voltage through lateral depletion between the columns. (2) Low Qg: The charge stored in the p-n columns is largely recovered during switching, resulting in much lower gate charge than a conventional MOSFET of equivalent voltage and RDS(on). (3) Avalanche: The device is 100% avalanche tested, providing robustness against voltage spikes from transformer leakage inductance in flyback converters.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>Gate control<\/td><\/tr>
      2<\/td>Drain<\/td>Output<\/td>Drain (tab\/heatsink)<\/td><\/tr>
      3<\/td>Source<\/td>Power<\/td>Source<\/td><\/tr><\/table>","application_scenarios":"
      • Off-line SMPS PFC boost stage with 800V blocking<\/li>
      • Adapter and charger flyback converters with low RDS(on)<\/li>
      • Auxiliary power supplies with 32nC low gate charge<\/li>
      • LED driver power stages in DPAK surface-mount<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>IPA60R099CP<\/td>TO-220<\/td>600V, lower RDS, through-hole<\/td><\/tr>
        ST<\/td>STW8NM80<\/td>TO-247<\/td>800V, 8A, MDmesh<\/td><\/tr>
        onsemi<\/td>FCD8N60N<\/td>DPAK<\/td>600V, 8A, similar class<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7119","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=7119"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7119\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=7119"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=7119"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=7119"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=7119"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}