{"id":7062,"date":"2026-06-23T03:14:42","date_gmt":"2026-06-23T03:14:42","guid":{"rendered":"https:\/\/materialparts.com\/tpf607a-vr\/"},"modified":"2026-06-23T03:14:42","modified_gmt":"2026-06-23T03:14:42","slug":"tpf607a-vr","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/tpf607a-vr\/","title":{"rendered":"TPF607A-VR"},"content":{"rendered":"

Productos<\/h2>\n

The TPF607A-VR is a 600V N-channel enhancement-mode power MOSFET designed for high-voltage switching applications including off-line SMPS, PFC boost converters, and motor drives. Featuring low on-resistance and robust avalanche capability in a TO-220 package, it provides reliable performance in demanding power conversion circuits.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n
VDS<\/td>\n600 V<\/td>\n<\/tr>\n
ID (TC=25C)<\/td>\n7 A<\/td>\n<\/tr>\n
RDS(on) (typ)<\/td>\n1.0 Ohm @ VGS=10V<\/td>\n<\/tr>\n
Qg (typ)<\/td>\n38 nC<\/td>\n<\/tr>\n
EAS<\/td>\n350 mJ<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55C to +150C<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • 600V N-channel MOSFET with low RDS(on) for efficient switching<\/li>\n
  • Low gate charge for fast switching and reduced drive power<\/li>\n
  • High avalanche energy rating for rugged operation<\/li>\n
  • 100% avalanche tested for reliable field performance<\/li>\n
  • TO-220 through-hole package for easy thermal management<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Off-line switch-mode power supplies<\/li>\n
    • PFC boost converters<\/li>\n
    • Motor drives and inverters<\/li>\n
    • High-voltage DC-DC converters<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The TPF607A-VR is a 600V N-channel enhancement-mode power MOSFET designed for high-voltage switching applications including off-line SMPS, PFC boost converters, and motor drives. Featuring low on-resistance and robust avalanche capability in a TO-220 package, it provides reliable performance in demanding power conversion circuits. Key Specifications VDS 600 V ID (TC=25C) 7 A RDS(on) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[136],"class_list":["post-7062","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-vishay"],"acf":{"brief_explanation":"600V N-channel MOSFET, 7A, 1.0Ohm, 38nC Qg, TO-220, SMPS\/PFC","date_code":"","package_case":"TO-220 (3-pin, through-hole)","in_stock":4100,"datasheet":"https:\/\/www.taiwansemi.com\/products\/power-mosfet-n-ch\/600v\/TPF607A-VR","price":"$0.55 @ 1ku","product_introduction":"The TPF607A-VR is a 600V N-channel enhancement-mode power MOSFET designed for high-efficiency switching in off-line power supplies and PFC circuits. With 600 V drain-source rating and 7 A continuous drain current at TC=25C, it features typical RDS(on) of 1.0 Ohm at VGS=10V and total gate charge of 38 nC. The device is 100% avalanche tested with 350 mJ single-pulse rating for reliable operation during unclamped inductive switching.","working_principle":"The TPF607A-VR is a vertical DMOS N-channel enhancement-mode power MOSFET. (1) Cell Structure: Planar DMOS technology creates multiple parallel cell structures with P-body and N-epitaxial drift layer optimized for 600V blocking. (2) Gate Drive: Full enhancement at VGS=10V minimizes RDS(on). Moderate gate charge (38 nC) allows 50-200 kHz switching. (3) Avalanche: When drain voltage exceeds breakdown, the device enters avalanche. The 350 mJ single-pulse rating means it can safely absorb transformer leakage inductance energy during flyback turn-off.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>MOSFET gate control terminal<\/td><\/tr>
      2<\/td>Drain<\/td>Output<\/td>MOSFET drain (connected to tab)<\/td><\/tr>
      3<\/td>Source<\/td>Power<\/td>MOSFET source and body diode anode<\/td><\/tr><\/table>","application_scenarios":"
      • Off-line flyback and forward converter SMPS with 600V blocking<\/li>
      • PFC boost converter switches in CCM or CrM<\/li>
      • Motor drive inverter bridges<\/li>
      • HID lamp ballast circuits<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>IPA60R099CP<\/td>TO-220<\/td>600V, 0.099Ohm, CoolMOS<\/td><\/tr>
        onsemi<\/td>FCH7N60N<\/td>TO-220<\/td>600V, 7A, similar rating<\/td><\/tr>
        STMicroelectronics<\/td>STW20NM60<\/td>TO-247<\/td>600V, 20A, MDmesh<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7062","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=7062"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/7062\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=7062"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=7062"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=7062"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=7062"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}